Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure includes an array of memory cells and a plurality of bit lines coupled to the memory cells and each extending in a second direction perpendicular to the first direction. Each of the memory cells includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor. A respective one of the bit lines and a respective storage unit are coupled to opposite ends of each one of the memory cells in the first direction. Two adjacent vertical transistors of the vertical transistors in the second direction are mirror-symmetric to one another. The array of memory cells is coupled to the peripheral circuit across the bonding interface.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a first bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure includes an array of memory cells and a plurality of bit lines coupled to the memory cells and each extending in a second direction perpendicular to the first direction. Each of the memory cells includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor. A respective one of the bit lines and a respective storage unit are coupled to opposite ends of each one of the memory cells in the first direction. The array of memory cells is coupled to the peripheral circuit across the first bonding interface.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure includes an array of memory cells and a plurality of bit lines coupled to the memory cells and each extending in a second direction perpendicular to the first direction. Each of the memory cells includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor. The vertical transistor includes a semiconductor body extending in the first direction, and a gate structure in contact with two opposite sides of the semiconductor body in the second direction. A respective one of the bit lines and a respective storage unit are coupled to opposite ends of each one of the memory cells in the first direction.

Abstract: System for detecting intention of movements by a subject comprises sensors and a computing device. The sensors are configured to be engaged to the subject. The sensors measure electromyogram signals from the subject. The computing device receives the electromyogram signals from the sensors. Features are extracted using electromyogram signals from one or more of the sensors. One or more of the extracted features are compared with their respective threshold corresponding to a first movement among the movements. Intention of making the first movement is registered, prior to the onset of the first movement, based on the comparison.

Abstract: The present disclosure provides a comprehensive utilization method and test equipment for surface water, a goaf and geothermal energy in a coal mining subsidence area. The method comprises the following steps: determining a geothermal water collection area, arranging heat energy exchange equipment in a main roadway, and arranging a geothermal water extraction system, wherein the geothermal water extraction system comprises geothermal wells, extraction pipelines and tail water reinjection pipelines, the extraction pipelines are connected with the heat energy exchange equipment, and the tail water reinjection pipelines are connected with a water outlet of the heat energy exchange equipment; arranging a water channel on the surface, and arranging a drainage system on a subsidence trough to guide surface water to flow underground; and controlling directional and ordered flow of surface water through the coal mining subsidence area formed by ground mining to achieve sustainable mining of underground water.

Abstract: Provided herein are engineered IL2 polypeptides and fusion proteins thereof. Also provided are methods of modulating an immune response by administering an engineered IL2 polypeptide or a fusion protein thereof. The engineered IL2 polypeptides and fusion proteins thereof demonstrate increased binding to IL2R?, decreased binding to IL2R?, or both.

Abstract: Various embodiments of the teachings herein include a nonlinear model modeling method. The method may include: determining complete design point data for each of multiple target nonlinear underlying process of multiple types of equipment; establishing a descriptive formula of the process with the ratio of a similarity parameter supported by a similarity criterion to a similarity parameter based on design point data, to obtain a universal model of the process; constructing a machine learning algorithm between the parameter of the actual working condition and the variable parameter and establishing a correlation between the machine learning algorithm and the universal model; and taking the universal models of all the target nonlinear underlying processes of each type of equipment and the correlated machine learning algorithms as a universal model of the type of equipment. The universal model comprises a variable parameter that changes as a parameter of an actual working condition changes.

Abstract: In certain aspects, a memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, and a plurality of peripheral circuits coupled to the array of memory cells and configured to control the array of memory cells. A first peripheral circuit of the plurality of peripheral circuits includes a first three-dimensional (3D) transistor coupled to the array of memory cells through at least one of the plurality of word lines. The first 3D transistor includes a 3D semiconductor body, and a gate structure in contact with a plurality of sides of the 3D semiconductor body. The gate structure includes a gate dielectric and a gate electrode.

Abstract: In certain aspects, a memory device includes an array of memory cells and a plurality of peripheral circuits coupled to the array of memory cells and configured to control the array of memory cells. A first peripheral circuit of the plurality of peripheral circuits includes a first three-dimensional (3D) transistor. The first 3D transistor includes a 3D semiconductor body, and a gate structure in contact with a plurality of sides of the 3D semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The gate electrode includes a metal, and the gate dielectric has a thickness between 1.8 nm and 10 nm.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure including an array of memory cells, a second semiconductor structure including a peripheral circuit, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The peripheral circuit includes a 3D transistor. The array of memory cells is coupled to the peripheral circuit across the bonding interface.

Abstract: In certain aspects, a memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, and a plurality of peripheral circuits coupled to the array of memory cells and configured to control the array of memory cells. A first peripheral circuit of the plurality of peripheral circuits includes a first three-dimensional (3D) transistor coupled to the array of memory cells through at least one of the plurality of bit lines. The first 3D transistor includes a 3D semiconductor body, and a gate structure in contact with a plurality of sides of the 3D semiconductor body. The gate structure includes a gate dielectric and a gate electrode.

Abstract: Various embodiments of the teachings herein include a method for optimizing an integrated energy system comprising nonlinear devices. The method may include: receiving an optimization task containing an optimization objective; building a system of nonlinear equations on the basis of the optimization objective and a simulation model of the integrated energy system; solving the system of nonlinear equations using a linear programming algorithm to obtain an optimization result. Establishing the simulation model comprises: determining a topological structure of the integrated energy system, the topological structure comprising the devices of the integrated energy system and the connection attributes between the devices; determining general models of the devices and a connector model corresponding to the connection attributes; connecting the general models using the connector model to form a simulation model of the integrated energy system; and training the simulation model.

Abstract: Various embodiments of the teachings herein include a method for simulating an integrated energy system including nonlinear devices. The method may include: receiving a simulation task; building a system of nonlinear equations on the basis of the simulation task and a simulation model of the integrated energy system; and solving a system of nonlinear equations using a linear programming algorithm to obtain a simulation result. The process of establishing the simulation model may include: determining the topological structure of an integrated energy system, the topological structure comprising the devices of the integrated energy system and the connection attributes between the devices; determining general models of the devices and a connector model corresponding to the connection attributes; connecting the general models by means of the connector model to form a simulation model of the integrated energy system; and training the simulation model.

Abstract: Various embodiments of the teachings herein include a linearization processing method for nonlinear models. The method may include: for a nonlinear model of each piece of equipment, determining a value range of each input parameter of the model; dividing the value range of each input parameter into a plurality of subintervals based on a plurality of interpolation points; determining a plurality of input sample values in each subinterval in a balanced manner; traversing input sample value combinations of each input parameter of the model, and using the nonlinear model to obtain an output sample value combination corresponding to each input sample value combination; and using all the input sample value combinations and the corresponding output sample value combinations to generate a tensor table.

Abstract: A method and system are disclosed using steady-state motion visual evoked potential stimuli in an augmented reality environment. Requested stimuli data are received from a user application on a smart device. Sensor data and other context data are also received, where other context data includes data that is un-sensed. The requested stimuli data are transformed into modified stimuli based on the sensor data, and the other context data. Modified stimuli and environmental stimuli are presented to the user with a rendering device configured to mix the modified stimuli and the environmental stimuli, thereby resulting in rendered stimuli. Biosignals generated in response to the rendered stimuli are received from the user to a wearable biosignal sensing device. Received biosignals are classified based on the modified stimuli, resulting in a classified selection, which is returned to the user application.

Abstract: Various embodiments of the teachings herein include a method for controlling an integrated energy system. The method may include: determining the topological structure of an integrated energy system, the topological structure representing devices of the integrated energy system and connection attributes between the devices; determining general models of the devices and a connector model corresponding to the connection attributes; connecting the general models by means of the connector model so as to form a simulation model of the integrated energy system; training the simulation model; and generating a control command of the integrated energy system on the basis of the trained simulation model.

Abstract: Disclosed are a class of BTK kinase inhibitor compounds with a high activity and a high selectivity and the use thereof in the preparation of a drug for treating BTK, target-related diseases.

Abstract: Disclosed are pyrrolotriazine compounds which act as a mitogen-activated protein kinase interacting kinase (MNK) inhibitor, and the use thereof in the preparation of a mitogen-activated protein kinase interacting kinase inhibitor drug. Specifically disclosed are compounds represented by formula (I) or a pharmaceutically acceptable salt thereof.

Abstract: A high-capacity self-locking toolbox with three opening modes, which includes a box frame, a box cover, and a clamping base. The box frame includes an upper box frame and a lower box frame which are folded in the middle to make two pieces. The box cover includes an upper box cover and a lower box cover. The two box covers are respectively provided on an upper surface and a lower surface of the box frame. A reinforced rib surface is provided inside an inner wall of the box frame. The reinforced rib surface is provided with self-locking clamping members in pairs, and the clamping base is installed in the self-locking clamping members. The three opening modes enable the toolbox to be opened from the upper side, the lower side, or the middle, so as to have access to the tools from any side of the toolbox. The interior of the toolbox is designed in modular, the clamping base has a self-locking function, and the tools have a compact arrangement.

Abstract: A user-wearable system for communicating with a computer system includes a hand wearable device, a sensor array on the hand wearable device and configured to capture myoelectric signals from the user's hand and a means for converting the myoelectric signals into computer-readable signals corresponding to a computer instruction executed by the computer system.