Abstract: The present invention relates to a ring gear and a gear reduction device. The ring gear includes an annular body with a plurality of mounting portions, and a plurality of teeth arranged on an inner circumferential surface of the annular body. The annular body and the teeth are integrally formed from powder metal, and the mounting portions and the teeth are at least partly overlapped in an axial direction of the annular body. The mounting portions are integrally formed with the annular body and the teeth, which results in concentricity between the mounting portion and the teeth being improved and cost of the ring gear being reduced. Furthermore, the mounting portions are overlapped with the teeth, which reduces the axial size of the ring gear.

Abstract: A display substrate, a method for manufacturing the same, and a display device are disclosed. The display substrate includes: a base substrate; and a conductive pattern, a first insulating layer and a conductive layer laminated on the base substrate, wherein the first insulating layer has a plurality of first via holes, and the conductive layer includes a signal line, the signal line being electrically connected to the conductive pattern through the plurality of first via holes. The present disclosure may achieve efficient transmission of signals and ensure the display effect of the display device.

Abstract: A voice communication method, a voice communication apparatus, and a voice communication system are disclosed. The method includes: at a transmitting side, obtaining voice information; determining whether the voice information is uttered by a preset user, and transmitting the voice information to a peer device if it is determined that the voice information is uttered by the preset user, and prohibiting the transmission of the voice information otherwise; and at a receiving side, receiving voice information transmitted from a peer device; collecting a first environmental information, and determining whether the first environmental information meets a voice output condition; outputting the voice information if it is determined that the first environmental information meets the voice output condition, and prohibiting the output of the voice information otherwise.

Abstract: A thin film transistor, a display substrate and a method for repairing the same, and a display device are provided. The thin film transistor includes: an active region, a gate insulating layer disposed on a side of the active region, and a gate disposed on a side of the gate insulating layer distal to the active region, and the active region includes a first electrode contact region at one end of the active region, a second electrode contact region at the other end of the active region, and a plurality of connection regions between the first electrode contact region and the second electrode contact region, and each of the plurality of connection regions is coupled to the first electrode contact region and the second electrode contact region, and every two adjacent connection regions are provided with an opening therebetween and are spaced apart from each other by the opening.

Abstract: An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate, a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

Abstract: A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.

Abstract: A display substrate and a method of preparing the same, and a display device are provided, the method including: providing a substrate; forming a switching thin film transistor precursor and a driving thin film transistor precursor on the substrate, each including a semiconductor layer, a gate insulating material layer and a gate metallic layer stacked sequentially above the substrate; forming a photoresist layer above the switching thin film transistor precursor and the driving thin film transistor precursor, and forming an etching mask from the photoresist layer, a first portion of the etching mask at the switching thin film transistor precursor and a second portion of the etching mask at the driving thin film transistor precursor having different shapes; and forming a switching thin film transistor and a driving thin film transistor, by etching processing the switching thin film transistor precursor and the driving thin film transistor precursor with the etching mask.

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

Abstract: The present disclosure provides a touch panel and a method for manufacturing the same, and a display apparatus. The display panel includes a substrate, a touch electrode provided in a touch region of the substrate, and a plurality of signal transmission lines provided in a non-touch wiring region of the substrate, the non-touch wiring region of the substrate is located in a bezel of the touch panel, the signal transmission lines are coupled to the touch electrode for transmitting a touch signal, the signal transmission lines in the non-touch wiring region are arranged in at least two layers overlapping with each other, and the signal transmission lines of adjacent layers are insulated from each other.

Abstract: A method and system for performing low power synchronization between to communication nodes is disclosed herein. In one embodiment, a method performed by a first wireless communication node includes: determining a wake up window start time and duration of a second wireless communication node; and transmitting at least one signal to the second wireless communication node during the determined wake up window, the at least one signal comprising at least one synchronization sequence, wherein the at least one synchronization sequence is configured to enable the second wireless communication node to adjust its wake up window timing.

Abstract: Implementations of the present application disclose a method and device for processing a service request. If a service request passes consensus verification, each consensus node stores a digest of service data in a blockchain, instead of storing the service data in the blockchain. As such, the digest of the service data is stored in the trustworthy blockchain, and authenticity of the service data can still be verified. In addition, the service data is not stored in the blockchain so that the service data cannot be obtained by a blockchain node irrelevant to the target service. Therefore, each consensus node does not need to consume computing resources to encrypt the service data any more, thereby improving efficiency of performing consensus verification on the service request by each consensus node.

Abstract: The invention provides a silk fibroin-based anti-counterfeiting mark comprising a silk fibroin film layer and a gold film layer located on the silk fibroin film layer, and the area of the gold film layer is less than that of the silk fibroin film layer. The inventive also provides a method for preparing the silk fibroin-based optical anti-counterfeiting mark, the method comprises preparing an aqueous silk fibroin solution, coating the aqueous silk fibroin solution onto a substrate to obtain a silk fibroin film, and sputtering a layer of gold film on the silk fibroin film with a mask to obtain the silk fibroin-based optical anti-counterfeiting mark. In the invention a thin layer of Au film is sputtered on a silk fibroin film such that an anti-counterfeiting mark pattern appears at a high humidity, the method is simple and can significantly the production cost of optical anti-counterfeiting mark.

Abstract: A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.

Abstract: A method includes monitoring an activity stream to identify actions that match stored sponsored story specifications, for providing one or more sponsored stories to a viewing user. The sponsored story specifications include a visual specification for the sponsored story, and matched sponsored stories are ranked for a viewing user. Users can set privacy preferences related to sponsored stories. The ranking and privacy settings contribute to which sponsored stories are provided for display to the viewing user.

Abstract: The present application provides a method for simultaneously synthesizing a biological flocculant with polysaccharide and ?-PGA as the active components by using Bacillus licheniformis. Bacillus licheniformis is inoculated to a slant culture medium to be cultured; a single colony on a fresh plate is inoculated to a seed culture medium to be cultured; and a seed fermentation broth is inoculated to a fermentation culture medium to be cultured, and then the biological flocculant having two different components is obtained. The flocculant synthesized in the present invention is high in activity and good in thermal stability; and especially, the flocculation effect of polysaccharide is relatively superior under acidic and neutral conditions, and the flocculation activity of ?-PGA is relatively higher under neutral and alkaline environments, which can satisfy a relatively large pH application range.

Abstract: Provided is a method for controlling smooth switching of an operation direction of a bidirectional resonant CLLC circuit, which applies to the bidirectional resonant CLLC circuit. The method includes the following steps: Step 1: detecting a current circuit state and controlling the bidirectional resonant CLLC circuit to operate in a forward operation state by means of a primary bridge and a secondary bridge, by a controller; Step 2: performing Step 3 when an externally transmitted reference signal received by the controller or an internal preset reference signal in the controller is an operation direction switching signal; Step 3: performing frequency conversion control, by the controller; Step 4: performing preparation of phase shift control and generating a driving signal of the secondary bridge, by the controller; Step 5: performing the phase shift control, by the controller; and Step 6: switching a circuit operation state to an inverse operation mode.

Abstract: A high speed thin film two terminal resistive memory article of manufacture comprises a chargeable and dischargeable variable resistance thin film battery having a plurality of layers operatively associated with one another, the plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising the cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, the barrier layer comprised of a material that substantially prevents the cations from combining with the anode layer.

Abstract: An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.