Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

Abstract: According to some embodiments of the present invention a phase change device (PCD) has a first and second semiconductor layer. The first semiconductor layer made of a first semiconductor material and has a first semiconductor thickness, a first interface surface, and a first electrode surface. The first interface surface and first electrode surface are on opposite sides of the first semiconductor layer. The first semiconductor material can transition between a first amorphous state and a first crystalline state at one or more first conditions. The second semiconductor layer is made of a second semiconductor material and has a second semiconductor thickness, a second interface surface, and a second electrode surface. The second interface surface and second electrode surface are on opposite sides of the second semiconductor layer. The first interface surface and the second interface surface are in electrical, physical, and chemical contact with one another at an interface.

Abstract: A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.

Abstract: Embodiments of the present disclosure disclose a method, a server, a client, and a system for sharing content. The method includes: obtaining sharing request submitted by the client, the sharing request including a destination website to be shared; obtaining sharing content of the destination website according to the destination website; processing the content of the destination website, and generating an accessible address corresponding to the content of the destination website; and sending the accessible address corresponding to the content of the destination website to the client, such that the client replaces the destination website by using the accessible address and sends a sharing message including the accessible address. The method, the server, the client, and the system can be directed to increase efficiency of visiting sharing content.

Abstract: Embodiments of the invention are directed to a resistive switching device (RSD). A non-limiting example of the RSD includes a fin-shaped element formed on a substrate, wherein the fin-shaped element includes a source region, a central channel region, and a drain region. A gate is formed over a top surface and sidewalls of the central channel region. The fin-shaped element is doped with impurities that generate interstitial charged particles configured to move interstitially through a lattice structure of the fin-shaped element under the influence of an electric field applied to the RSD.

Abstract: A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gallium arsenide substrate, a thiourea-based passivation layer in contact with at least a top surface of the gallium arsenide substrate, and a capping layer in contact with the thiourea-based passivation layer. The method includes passivating a gallium arsenide substrate utilizing thiourea to form a passivation layer in contact with at least a top surface of the gallium arsenide substrate. The method further includes forming a capping layer in contact with at least a top surface of the passivation layer, and annealing the capping layer and the passivation layer.

Abstract: This disclosure provides systems, methods, and apparatus related to cathode materials for lithium ion batteries. In one aspect, a structure comprises an oxide including lithium and two or more transition metals. A first portion of the oxide is in a layered phase and a second portion of the oxide is in a rocksalt phase. The first potion of the oxide and the second portion of the oxide form a layered-rocksalt intergrown structure.

Abstract: A PCM cell is provided that includes a silver (Ag) doped Ge2Sb2Te5 (GST) alloy layer as the PCM material. The PCM cell containing the Ag doped GST alloy layer exhibits a reduced reset state resistance drift as compared to an equivalent PCM cell in which a non-Ag doped GST alloy layer is used. In some embodiments and depending on the Ag dopant concentration of the Ag doped GST alloy layer, a constant reset state resistance or even a negative reset state resistance drift can be obtained.

Abstract: Recombinant microorganisms, pharmaceutical compositions thereof, and methods of protein display on the cell surface of the microorganisms are disclosed.

Abstract: Systems and methods are directed controlling components of a utility grid. The system can receive signals. The system can determine one or more statistical metrics based on the signals. The system can generate an input matrix. The system can input the input matrix into a machine learning model. The system can predict, based on the input matrix and via the machine learning model, the value for the signal of the utility grid at a time period for which the value is not provided in the input matrix. The system can provide a command to control a component of the utility grid responsive to the value for the signal of the utility grid predicted by the machine learning model.

Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, and a plurality of blades with pockets to accommodate the cutters, respectively. In an embodiment, the plurality of cutters comprise a substrate, an ultra-hard layer, a concave surface on the top of the ultra-hard layer, wherein the concave surface comprises a plurality of planar and curved surfaces.

Abstract: The present disclosure pertains to compositions comprising anti-VEGF proteins and methods for producing such compositions.

Abstract: The present disclosure is related to a display apparatus. The display apparatus may include a display panel and a mirror switcher. The mirror switcher may be configured to reflect external incident light and block display light emitted by the display panel in a mirror mode of the display apparatus, and to transmit the display light emitted by the display panel in a display mode of the display apparatus.

Abstract: The invention belongs to the technical field of pesticides and specifically relates to an aryl sulfide containing a benzylamine structure, a synthesis method therefor, and an application thereof. The aryl sulfide is denoted as compound I. Also provided is an agriculturally acceptable salt of the aryl sulfide. The compound represented by formula I shows excellent effects on various harmful organisms, especially spider mites represented by Tetranychus cinnabarinus, Tetranychus urticae, Tetranychus Kanzawai Kishida, Panonychus citri, etc., and can be used for controlling all kinds of harmful mites.

Abstract: The present disclosure pertains to compositions comprising aflibercept and methods for producing such compositions in chemically defined media and using chromatography to reduce amounts of certain aflibercept variants.

Abstract: A gamma ray spectrum unfolding method for elemental capture spectroscopy logging and a device therefor including the steps of first preprocessing the data obtained from an elemental capture spectrometry instrument; constructing a primary element group and an auxiliary element group according to the degree of interactions among the elements via theoretical analysis and numerical calculation of spectrum profiles, characteristic peak channels, and backgrounds of different elements; unfolding by using the least square method based on the construction of the primary element group and the auxiliary element group; and finally reconstructing the spectrum based on theory according to the yield of each element obtained by unfolding with the least square method, and comparing the measured gamma ray spectrum with the reconstructed gamma ray spectrum for error control, thereby improving the spectrum unfolding precision.

Abstract: In an embodiment, a fabrication method comprises forming first and second electrodes over a substrate that includes a nanowire that extends between, and beneath portions of, the first and second electrodes. The method also includes forming a mask structure that defines at least one opening over a portion of the nanowire and defines at least one overhang portion over a gap between the substrate and the mask. The method further includes depositing a first gate electrode on the substrate and overlapping a third region of the nanowire, and depositing a second gate electrode on the substrate and overlapping a fourth region of the nanowire. The depositing of the first gate electrode includes depositing conductive material through the at least one opening from a first oblique angle, and the depositing of the second gate electrode includes depositing conductive material through the at least one opening from a second oblique angle.

Abstract: According to an embodiment of the present invention, a method for fabricating a Majorana fermion structure includes providing a substrate, and depositing a superconducting material on the substrate. The method includes depositing a magnetic material on the superconducting material using angled deposition through a mask. The method includes annealing the magnetic material and the superconducting material to form a magnetic nanowire partially embedded in the superconducting material such that the magnetic nanowire and the superconducting material form a Majorana fermion structure.

Abstract: The present disclosure pertains to compositions comprising aflibercept and methods for producing such compositions in chemically defined media and using chromatography to reduce amounts of certain aflibercept variants.

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.