Abstract: An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.

Abstract: A method for calibrating an ANC-enabled portable audio device having microphones plays continuously a calibration sound by a calibrated speaker of a test station separate from the device. For each microphone of all the microphones, a microphone calibration value is computed using a comparison of a predetermined level and a measured level of an audio signal transduced by the microphone in response to the continuously-played calibration sound. The calibration is done without using a microphone of the test station. A processing element of the device may be programmed to make the comparison and computation. The processing element also causes a speaker of the device to generate a second calibration sound, measures a second level while the computed calibration value is applied to one of microphones (e.g., error microphone), and computes a calibration value for the device speaker using a comparison of a predetermined level and the second level.

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

Abstract: A III-V optoelectronic light emitting device is epitaxially formed on a semiconductor on insulator substrate over a buried waveguide core. The device is optically coupled to the underlying waveguide core. A MOSFET device is formed on a semiconductor substrate beneath the insulator that contains the waveguide core.

Abstract: One aspect of the invention relates to a series of new PCSK9 inhibitor compounds comprising piperidine ring structures, including compounds of formula (I) and/or pharmaceutically acceptable salts thereof. Another aspect of the invention relates to methods of treating PCSK9 receptor related diseases comprising administration of one or more compounds of formula (I) or a pharmaceutically acceptable salt thereof.

Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

Abstract: A liquid crystal panel, comprising a first substrate and a second substrate opposite to each other, and liquid crystals and sealant disposed between the first substrate and the second substrate. The liquid crystal panel has a display area and a non-display area, the first substrate has a black matrix in which a groove is provided to separate the sealant from the display area.

Abstract: A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.

Abstract: The present disclosure relates to a compound as shown in formula (II), a tautomer or a pharmaceutically acceptable salt thereof, and disclosed is the use thereof in preparing a drug for treating an ASK1-associated disease.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for storing data are provided. One of the methods includes: receiving, by one or more computing devices, a transaction request from a first node, the transaction request comprising transaction data; determining, by the one or more computing devices based on the transaction data, a blockchain network corresponding to the transaction request from a plurality of blockchain networks connected to the one or more computing devices, wherein the first node is excluded from a consensus process associated with the determined blockchain network; forwarding, by the one or more computing devices, the transaction request to the determined blockchain network; receiving, by the one or more computing devices from the determined blockchain network, a block generated based on consensus validation on the transaction request; and forwarding, by the one or more computing devices, the block to the first node.

Abstract: A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.

Abstract: A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.

Abstract: A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

Abstract: Disclosed in the present invention are a crystalline Form of pyrido[1,2-a]pyrimidone analog, a preparation method therefor and an intermediate thereof.

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Abstract: Examples of methods and devices for sending transaction information and performing consensus verification are described. In one example of the methods, a first consensus node receives transaction information and sends the transaction information to a second consensus node. The first consensus node receives a consensus verification failure notification from the second consensus node. The consensus verification failure notification includes an information identifier of the transaction information. In response to receiving the consensus verification failure notification, the first consensus node resends the transaction information to the second consensus node based at least on the consensus verification failure notification.

Abstract: Disclosed is a DNA methylation signature in Peripheral Blood Mononuclear cells (PBMC) for predicting hepatocellular carcinoma (HCC) stages and chronic hepatitis, which is CG IDs. This invention also disclosed kits and uses for the DNA methylation signature.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for storing data are provided. One of the methods includes: receiving, by one or more computing devices, a transaction request from a first node, the transaction request comprising transaction data; determining, by the one or more computing devices based on the transaction data, a blockchain network corresponding to the transaction request from a plurality of blockchain networks connected to the one or more computing devices, wherein the first node is excluded from a consensus process associated with the determined blockchain network; forwarding, by the one or more computing devices, the transaction request to the determined blockchain network; receiving, by the one or more computing devices from the determined blockchain network, a block generated based on consensus validation on the transaction request; and forwarding, by the one or more computing devices, the block to the first node.

Abstract: Embodiments of the specification disclose example methods and devices for broadcasting messages. One example method includes obtaining a first broadcast message by a first consensus node of a blockchain network. The first consensus node creates a first thread for a first message processing device corresponding to the first consensus node. The first consensus node sends the first broadcast message to the first message processing device by using the first thread. The first message processing device sends the first broadcast message to a second message processing device corresponding to a second consensus node. The first consensus node cancels the first thread.