Abstract: A method for preparing Mg-RE alloys with high strength and ductility using selective laser melting (SLM) additive manufacturing technology includes the following steps of: A. preparing Mg-RE-(Zn)—Zr pre-alloyed spherical powder by gas atomization; B. molding the Mg-RE-(Zn)—Zr pre-alloyed spherical powder using SLM to obtain the Mg-RE alloys with high strength and ductility; and C. conducting heat treatment on the Mg-RE alloys prepared in step B: solid solution+aging treatment or only aging treatment The method adjusts and controls microstructure and mechanical properties of the alloys by adjusting and controlling process parameters of SLM (laser power, scanning speed, hatch spacing, spot diameter, layer thickness, interlayer rotation angle, substrate preheating temperature, partition width and overlapping area width) and process parameters of subsequent heat treatment (temperature and time) to prepare the Mg-RE-(Zn)—Zr alloys with high strength and ductility using SLM process for the first time.

Abstract: A method for preparing Mg-RE alloys with high strength and ductility using selective laser melting (SLM) additive manufacturing technology includes the following steps of: A. preparing Mg-RE-(Zn)—Zr pre-alloyed spherical powder by gas atomization; B. molding the Mg-RE-(Zn)—Zr pre-alloyed spherical powder using SLM to obtain the Mg-RE alloys with high strength and ductility; and C. conducting heat treatment on the Mg-RE alloys prepared in step B: solid solution+aging treatment or only aging treatment The method adjusts and controls microstructure and mechanical properties of the alloys by adjusting and controlling process parameters of SLM (laser power, scanning speed, hatch spacing, spot diameter, layer thickness, interlayer rotation angle, substrate preheating temperature, partition width and overlapping area width) and process parameters of subsequent heat treatment (temperature and time) to prepare the Mg-RE-(Zn)—Zr alloys with high strength and ductility using SLM process for the first time.

Abstract: This disclosure describes one or more implementations of a digital image semantic layout manipulation system that generates refined digital images resembling the style of one or more input images while following the structure of an edited semantic layout. For example, in various implementations, the digital image semantic layout manipulation system builds and utilizes a sparse attention warped image neural network to generate high-resolution warped images and a digital image layout neural network to enhance and refine the high-resolution warped digital image into a realistic and accurate refined digital image.

Abstract: Methods, system and apparatus for relieving pressure in an organ such as, but not limited to, the eye are disclosed. The method includes implanting a bioabsorbable channel into the selected area of the organ using a delivery apparatus.

Abstract: The method and system for reminding readers of fatigue in reading while using electronic devices are revealed. First use a reading speed calculation module to detect user's reading speed within a period of time when the user is using an electronic with a display to read. The reading speed is related to pages being turned or the amount of words being read. Then a fatigue-in-reading reminder module is activated by the reading speed calculation module when the user's reading speed falls within a specific range so as to remind the user by pop-up windows, sounds, flash light or vibration at the proper time and provide the user certain corresponding measures he/she should take. Thereby there is no need to use additional equipment for preventing users from becoming more fatigue and healthy vision is accomplished at lower cost with higher efficiency.

Abstract: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Abstract: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Abstract: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Abstract: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Abstract: A method of forming diffusion sidewalls in a semiconductor structure and a semiconductor structure having diffusion sidewalls includes etching a trench into a semiconductor substrate to form first and second active regions, lining each trench with an oxide liner along exposed sidewalls of an active silicon region (RX) of the first and second active regions, removing the oxide liner formed along the exposed sidewalls of the RX region of one of the first and second active regions, forming diffusion sidewalls by epitaxially growing in-situ doped material within the exposed sidewalls of the RX region of the one of the first and second active regions, and forming an isolation region within the trench between the first and second active regions to electrically isolate the first and second active regions from each other.

Abstract: The invention relates to a system and a method for using a trusted device to browse e-books. The system comprises an author end, a user end, an electronic bookstore unit, and a data storage unit. In the cloud system, an e-book author can set the authorization mechanism about e-book sale and downloading to protect their copyrights and to upload the e-book by the electronic bookstore unit. The user also can browse e-books by assigned electronic apparatuses to protect purchase rights from being illegally copied. The e-book is an encrypted file, so the user has to use the identification code of the certified electronic apparatus as a decrypted key to decrypt the e-book file for reading.

Abstract: A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.

Abstract: The method and system for reminding readers of fatigue in reading while using electronic devices are revealed. First use a reading speed calculation module to detect user's reading speed within a period of time when the user is using an electronic with a display to read. The reading speed is related to pages being turned or the amount of words being read. Then a fatigue-in-reading reminder module is activated by the reading speed calculation module when the user's reading speed falls within a specific range so as to remind the user by pop-up windows, sounds, flash light or vibration at the proper time and provide the user certain corresponding measures he/she should take. Thereby there is no need to use additional equipment for preventing users from becoming more fatigue and healthy vision is accomplished at lower cost with higher efficiency.

Abstract: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.

Abstract: Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.

Abstract: An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET.

Abstract: A fixing device for a planar display panel includes a fastening fixture for fixing the planar display panel on a carrier stage in which a plurality of slide slots are provided. The fastening fixture includes a driving rod capable of being inserted into one of the slide slots, a fixture body and a bottom plate. The driving rod is connected with the fixture body and the bottom plate, which are respectively provided on two sides of the carrier stage in operation, and a spring is wound around the driving rod and capable of driving the bottom plate to move.

Abstract: A three-dimensional (3D) integrated circuit (IC) structure includes a first layer of graphene formed over a substrate; a first level of one or more active devices formed using the first layer of graphene; an insulating layer formed over the first level of one or more active devices; a second layer of graphene formed over the insulating layer; and a second level of one or more active devices formed using the second layer of graphene, the second level of one or more active devices electrically interconnected with the first level of one or more active devices.

Abstract: The present disclosure relates to compounds, compositions and methods for the treatment of Hepatitis C virus (HCV) infection. Also disclosed are pharmaceutical compositions containing such compounds and methods for using these compounds in the treatment of HCV infection.

Abstract: A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.