Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information.

Abstract: A load store advisory program sets a breakpoint within a portion of a program, determines if the breakpoint will cause unexpected behavior, and generates a warning if it is determined that the breakpoint will cause unexpected behavior. The unexpected behavior may be the result of setting a breakpoint within a load-store sequence that, because of the breakpoint, will repeatedly fail.

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

Abstract: A circuit or combined ballast for driving a fluorescent lamp and at least one light emitting diode (LED) includes an integrated driver circuit having an alternating current (AC) circuit that includes at least one ballast coil for driving the fluorescent lamp and a direct current circuit for driving the LED having a secondary winding inductively coupled with the fluorescent lamp ballast coil for driving the LED. A method of driving a lamp assembly includes at least one fluorescent lamp and at least one light emitting diode (LED) and a combined driver circuit for supplying both the fluorescent lamp and the LED.

Abstract: Optical fiber preforms which can be drawn into optical fibers of desired dimensions are fabricated by applying a vacuum to a cladding tube and drawing molten glass from a crucible into a bore of the cladding tube while a portion of the cladding tube is within a furnace preferably through a small hole in the top of the furnace. The method and apparatus are particularly applicable to highly non-linear fiber (HNLF) glasses and highly doped or rare earth glasses since materials therein are generally expensive and only a small quantity of molten glass is required but can be applied to virtually any optical fiber construction where the core glass has a lower melting or softening point than that of the cladding tube. Sources of contamination, breakage and other preform defects are substantially avoided and toxic substances, if present are readily confined.

Abstract: A system and method is provided that eliminates DC bias on at least one of a first electrolytic capacitor and a second electrolytic capacitor of a bipolar junction transistor (BJT) based inverter ballast having a shutdown control circuit in association with only one of at least two BJT switches. A duty cycle dependent capacitor is connected in a series with a bus of the ballast, and a resonant circuit, including primary winding of the output transformer and a resonant capacitor. A balancing/charging resistor is connected at one end between the first electrolytic capacitor and the second electrolytic capacitor, and at another end to the duty cycle dependent capacitor and the resonant circuit.

Abstract: A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.

Abstract: Present invention deals with cost-effective surface-modified zeolite materials developed from commercial zeolites and flyash-based zeolites by treating with surface modifiers like hexadecyltrimethyl ammonium bromide (HDTMA-Br). The formation of zeolitic materials with anionic characteristics requires treatment with a surfactant with initial concentrations greater than its critical micelle concentration (CMC). The sorption of oxyanions on the surfactant-modified zeolite (SMZ) is attributed to surface complexation and surface precipitation. Incorporation of metal ions on SMZ showed improved anion uptake for dearsenification of water due to synergistic effects and is able to meet the stringent target of 10 ppb of As on potable water being adopted by most countries. High selectivity, faster kinetics and high adsorption capacity ensures cost effectiveness of this product as compared to other low-cost products for dearsenification.

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: A method of dispersing particles in a medium. The method includes providing a first particle/solvent dispersion comprising the particles and a first solvent, adding a second solvent to the first particle/solvent dispersion to form a second particle/solvent dispersion, wherein the first solvent and the second solvent are miscible, and extracting substantially all of the first solvent from the second particle/solvent dispersion to form a third particle/solvent dispersion.

Abstract: Present invention deals with cost-effective surface-modified zeolite materials developed from commercial zeolites and flyash-based zeolites by treating with surface modifiers like hexadecyltrimethyl ammonium bromide (HDTMA-Br). The formation of zeolitic materials with anionic characteristics requires treatment with a surfactant with initial concentrations greater than its critical micelle concentration (CMC). The sorption of oxyanions on the surfactant-modified zeolite (SMZ) is attributed to surface complexation and surface precipitation. Incorporation of metal ions on SMZ showed improved anion uptake for dearsenification of water due to synergistic effects and is able to meet the stringent target of 10 ppb of As on potable water being adopted by most countries. High selectivity, faster kinetics and high adsorption capacity ensures cost effectiveness of this product as compared to other low-cost products for dearsenification.