Abstract: A laser surgery system includes a light source, an eye interface device, a scanning assembly, a confocal detection assembly and preferably a confocal bypass assembly. The light source generates an electromagnetic beam. The scanning assembly scans a focal point of the electromagnetic beam to different locations within the eye. An optical path propagates the electromagnetic beam from a light source to the focal point, and also propagates a portion of the electromagnetic beam reflected from the focal point location back along at least a portion of the optical path. The optical path includes an optical element associated with a confocal detection assembly that diverts a portion of the reflected electromagnetic radiation to a sensor. The sensor generates an intensity signal indicative of intensity the electromagnetic beam reflected from the focal point location. The confocal bypass assembly reversibly diverts the electromagnetic beam along a diversion optical path around the optical element.

Abstract: Methods and apparatus are configures to measure an eye without contacting the eye with a patient interface, and these measurements are used to determine alignment and placement of the incisions when the patient interface contacts the eye. The pre-contact locations of one or more structures of the eye can be used to determine corresponding post-contact locations of the one or more optical structures of the eye when the patient interface has contacted the eye, such that the laser incisions are placed at locations that promote normal vision of the eye. The incisions are positioned in relation to the pre-contact optical structures of the eye, such as an astigmatic treatment axis, nodal points of the eye, and visual axis of the eye.

Abstract: An optical system including a light source, optics for directing illumination, thereby producing reflected light, optics for receiving the reflected light, a splitter disposed at a pupil plane for receiving the reflected light and splitting it into a first and second portion, first imaging optics for receiving the first portion and directing it to a first sensor to produce a first image portion, the first sensor delivering the first image portion to a processor, second imaging optics for receiving the second portion and directing it to a second sensor to produce a second image portion, the second sensor delivering the second image portion to the processor, and the processor for combining the first image portion and the second image portion into a single image of the sample.

Abstract: Substrate processing methods and apparatus are disclosed. In some embodiments a substrate processing apparatus may comprise a support structure and a moveable stage including first and second stages. The moveable stage has one or more maglev units attached to the first stage and/or second stage proximate an edge of the first stage. The first stage retains one or more substrates and moves with respect to a first axis that is substantially fixed with respect to the second stage. The second stage translates along a second axis with respect to the support structure. In other embodiments, a primary motor may maintain a rotary stage at an angular speed and/or accelerate or decelerate the stage from a first angular speed to a second angular speed. A secondary motor may accelerate the stage from rest to the first angular speed and/or decelerate the stage from a non-zero angular speed.

Abstract: One embodiment relates to a method in which a measuring apparatus is used to collect a first set of wave form data which depends on micro-structure of a moving surface. A correspondence is identified between the first set of wave form data and actual position data. Calibrated wave form data is stored which indicates said correspondence between the first set of wave form data and actual position data. In addition, the measuring apparatus may be used to collect a second set of wave form data which depends on micro-structure of the moving surface, a cross-correlation may be computed between the second set of wave form data and the calibrated wave form data. Another embodiment relates to an apparatus for measuring position and/or motion using surface micro-structure of a moving surface. Another embodiment relates to method for measuring motion using surface micro-structure. Other embodiments and features are also disclosed.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.

Abstract: A substrate processing apparatus and method for dynamic tracking of wafer motion and distortion during lithography are disclosed. An energetic beam may be applied to a portion of a substrate according to a predetermined pattern. The relative positions of one or more targets on the substrate may be determined while applying the energetic beam to the portion of the substrate. A dynamic distortion of the substrate may be determined from the relative positions while applying the energetic beam to the portion of the substrate. Application of the energetic beam may be deviated from the predetermined pattern in a manner calculated to compensate for the dynamic distortion of the substrate.

Abstract: The present application discloses a method of model-based measurement of semiconductor device features using a scatterometer system. The method includes at least the following steps. A cost function is defined depending upon a plurality of variable parameters of the scatterometer system and upon a plurality of variable parameters for computer-implemented modeling to determine measurement results. Constraints are established for the plurality of variable parameters of the scatterometer system and for the plurality of variable parameters for the computer-implemented modeling. A computer-implemented optimization procedure is performed to determine an optimized global set of parameters, including both the variable parameters of the scatterometer system and the variable parameters for the computer-implemented modeling, which result in a minimal value of the cost function. Finally, the optimized global set of parameters is applied to configure the scatterometer system and the computer-implemented modeling.

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.

Abstract: The present application discloses a new technique which reduces the dimensionality of a feature model by re-use of data that has been obtained by a prior measurement. The data re-used from the prior measurement may range from parameters, such as geometrical dimensions, to more complex data that describe the electromagnetic scattering function of an underlying layer (for example, a local solution of the electric field properties).

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb; target C is designed to have an offset Xc; and target D is designed to have an offset Xd. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

Abstract: A substrate processing apparatus and method are disclosed.

Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.

Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

Abstract: Substrate processing methods and apparatus are disclosed. In some embodiments a substrate processing apparatus may comprise a support structure and a moveable stage including first and second stages. The moveable stage has one or more maglev units attached to the first stage and/or second stage proximate an edge of the first stage. The first stage retains one or more substrates and moves with respect to a first axis that is substantially fixed with respect to the second stage. The second stage translates along a second axis with respect to the support structure. In other embodiments, a primary motor may maintain a rotary stage at an angular speed and/or accelerate or decelerate the stage from a first angular speed to a second angular speed. A secondary motor may accelerate the stage from rest to the first angular speed and/or decelerate the stage from a non-zero angular speed.

Abstract: Techniques for optimizing the sensitivity of spectroscopic measurement techniques with respect to certain profile variables by selecting desired measurement angles since the measurement sensitivity to each variable depends, at least in part, on the measurement angles of an incident beam. The selected desired set of measurement angles includes both an azimuth angle and a polar angle. Optimizing the sensitivity of spectroscopic measurement techniques can also reduce or eliminates measurement correlation among variable to be measured.

Abstract: A substrate processing apparatus and method are disclosed.

Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.