Patents by Inventor Noah Bareket
Noah Bareket has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080094630Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.Type: ApplicationFiled: December 21, 2007Publication date: April 24, 2008Applicant: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher Bevis, John Fielden, Noah Bareket, Kenneth Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus Dziura, Mark Ghinovker
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Publication number: 20080037005Abstract: To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.Type: ApplicationFiled: January 10, 2006Publication date: February 14, 2008Inventors: Noah Bareket, Daniel Wack, Guoheng Zhao
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Patent number: 7317531Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.Type: GrantFiled: December 5, 2003Date of Patent: January 8, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher F. Bevis, John Fielden, Noah Bareket, Kenneth P. Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus G. Dziura, Mark Ghinovker
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Patent number: 7301634Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an interferometer is employed to modulate substantially a plurality of wavelengths of a broadband source and then acquiring one or more images of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is then determined by analyzing the one or more acquired images from the periodic targets using a scatterometry overlay technique based on the predefined offsets.Type: GrantFiled: February 23, 2004Date of Patent: November 27, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Christopher F. Bevis, John Fielden, Noah Bareket, Anatoly Fabrikant, Mark Ghinovker, Piotr Zalicki, Dan Wack
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Patent number: 7298481Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets target that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a plurality of optical signals are measured at a plurality of incident angles, wherein there are predefined offsets between the first and second structures. An overlay error is then determined between the first and second structures by analyzing the measured optical signals at the plurality of incident angles from the periodic targets using a scatterometry overlay technique based on the predefined offsets without using a calibration operation.Type: GrantFiled: February 23, 2004Date of Patent: November 20, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanevsky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant, Mark Ghinovker, John Fielden, Noah Bareket
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Patent number: 7280230Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: GrantFiled: December 19, 2002Date of Patent: October 9, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Patent number: 7280212Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a first optical signal is measured using a first ellipsometer or a first reflectometer and a second optical signal is measured using a second ellipsometer or a second reflectometer. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured first and second optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.Type: GrantFiled: February 23, 2004Date of Patent: October 9, 2007Assignee: Kla-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Mark Ghinovker, John Fielden, Noah Bareket
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Patent number: 7102749Abstract: A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value.Type: GrantFiled: April 7, 2005Date of Patent: September 5, 2006Assignee: KLA-TencorInventor: Noah Bareket
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Publication number: 20060126079Abstract: Techniques for optimizing the sensitivity of spectroscopic measurement techniques with respect to certain profile variables by selecting desired measurement angles since the measurement sensitivity to each variable depends, at least in part, on the measurement angles of an incident beam. The selected desired set of measurement angles includes both an azimuth angle and a polar angle. Optimizing the sensitivity of spectroscopic measurement techniques can also reduce or eliminates measurement correlation among variable to be measured.Type: ApplicationFiled: March 11, 2005Publication date: June 15, 2006Inventors: Noah Bareket, Haiming Wang
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Publication number: 20050174574Abstract: A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value.Type: ApplicationFiled: April 7, 2005Publication date: August 11, 2005Inventor: Noah Bareket
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Patent number: 6894783Abstract: A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value.Type: GrantFiled: May 2, 2003Date of Patent: May 17, 2005Assignee: KLA-Tencor CorporationInventor: Noah Bareket
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Publication number: 20040257571Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a first optical signal is measured using a first ellipsometer or a first reflectometer and a second optical signal is measured using a second ellipsometer or a second reflectometer. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured first and second optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.Type: ApplicationFiled: February 23, 2004Publication date: December 23, 2004Applicant: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Mark Ghinovker, John Fielden, Noah Bareket
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Publication number: 20040233442Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets.Type: ApplicationFiled: February 23, 2004Publication date: November 25, 2004Applicant: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Christopher F. Bevis, Paola Dececco, John Fielden, Noah Bareket, Kenneth P. Gross, Mark Ghinovker
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Publication number: 20040233444Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an interferometer is employed to modulate substantially a plurality of wavelengths of a broadband source and then acquiring one or more images of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is then determined by analyzing the one or more acquired images from the periodic targets using a scatterometry overlay technique based on the predefined offsets.Type: ApplicationFiled: February 23, 2004Publication date: November 25, 2004Applicant: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Christopher F. Bevis, John Fielden, Noah Bareket, Anatoly Fabrikant, Mark Ghinovker, Piotr Zalicki, Dan Wack
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Publication number: 20040233439Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets target that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, a plurality of optical signals are measured at a plurality of incident angles, wherein there are predefined offsets between the first and second structures. An overlay error is then determined between the first and second structures by analyzing the measured optical signals at the plurality of incident angles from the periodic targets using a scatterometry overlay technique based on the predefined offsets without using a calibration operation.Type: ApplicationFiled: February 23, 2004Publication date: November 25, 2004Applicant: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanevsky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant, John Fielden, Noah Bareket, Mark Ghinovker
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Publication number: 20040169861Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.Type: ApplicationFiled: December 5, 2003Publication date: September 2, 2004Applicant: KLA-Tenor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher F. Bevis, John Fielden, Noah Bareket, Kenneth P. Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus G. Dziura, Mark Ghinovker
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Publication number: 20040070772Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: ApplicationFiled: December 19, 2002Publication date: April 15, 2004Inventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Publication number: 20030206303Abstract: A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value.Type: ApplicationFiled: May 2, 2003Publication date: November 6, 2003Applicant: KLA-Tencor CorporationInventor: Noah Bareket
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Patent number: 6614520Abstract: Disclosed is a method of inspecting a reticle for defects that occur over time. The invention accomplishes this by generating and storing a “baseline” image of the reticle and then periodically generating a “current” image of the reticle and comparing the current and baseline images. The baseline image is taken at a time when the reticle is known to be acceptable. This may be when the reticle has been “qualified” by an optical test or when a die fabricated by reticle has passed an electrical test. Also disclosed in a method for compacting the baseline image before storage.Type: GrantFiled: December 18, 1997Date of Patent: September 2, 2003Assignee: Kla-Tencor CorporationInventors: Noah Bareket, Christian G. Desplat, Lance A. Glasser
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Patent number: 6580505Abstract: A mark comprising at least one set of calibration periodic structures and at least two sets of test periodic structures, both types of which are positioned along an axis. The mark is used to measure the relative position between two layers of a device. Each set of test periodic structures has its periodic structures formed within first and second sections. The periodic structures of the first and second sections are each formed on one of the two layers of the device, respectively. The first and second sections of each test set is positioned proximate to the second and first sections of the next test set, respectively. This mark allows two beams which scan the mark to travel over both a test section formed on one layer of the device and a test section formed on the other of the two layers. Scanning multiple test sets provides multiple registration error values which are then averaged to obtain an average registration error value.Type: GrantFiled: August 1, 2002Date of Patent: June 17, 2003Assignee: KLA-Tencor CorporationInventor: Noah Bareket