Abstract: A printing apparatus includes a printing unit configured to print an image on a print medium, an acquiring unit configured to acquire temperature information of the printing unit, and a control unit configured to control the printing unit so as to start relative scanning in a case where a temperature that is indicated by the temperature information has reached a print permission temperature. The print permission temperature in a first print mode whose speed at a time of a constant speed in relative scanning is a first speed is a first temperature. The print permission temperature in a second print mode whose speed at the time of the constant speed is a second speed that is faster than the first speed is a second temperature that is lower than the first temperature.

Abstract: A sensor interface circuit includes: an RF switch having a control node; a bias circuit electrically connected to the control node and applying, to the control node, a voltage at a first level or a second level corresponding to a linear region of a reflection characteristic; a first variable oscillation circuit electrically connectable to a first sensor; a second variable oscillation circuit electrically connectable to a second sensor; and a difference circuit electrically connected between the first variable oscillation circuit and the bias circuit, and between the second variable oscillation circuit and the bias circuit.

Abstract: A remote control manipulator system includes: a manipulator being controlled by an operator remotely to handle an object; a stereoscopic display device that displays a right-eye image and a left-eye image so as to be stereoscopically viewed; a model image generator that generates a model image being an image of an integrated three-dimensional model viewed from a viewpoint designated by the operator, the integrated three-dimensional model being a three-dimensional model obtained by integrating the manipulator model and a surrounding environment model being generated by performing image processing on the right-eye image and the left-eye image and being a three-dimensional model of the object and a surrounding environment thereof; and a model image display device that displays the model image and is configured to be able to be viewed by the operator switching between the stereoscopic display device and the model image display device through moving the head of the operator.

Abstract: A printing apparatus includes a printing unit configured to print an image on a print medium, an acquiring unit configured to acquire temperature information of the printing unit, and a control unit configured to control the printing unit so as to start relative scanning in a case where a temperature that is indicated by the temperature information has reached a print permission temperature. The print permission temperature in a first print mode whose speed at a time of a constant speed in relative scanning is a first speed is a first temperature. The print permission temperature in a second print mode whose speed at the time of the constant speed is a second speed that is faster than the first speed is a second temperature that is lower than the first temperature.

Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Abstract: An exhaust gas purification underfloor catalyst characterized in having a catalyst layer having a lower layer and an upper layer, the lower layer containing alumina and CeO2, the noble metal content of the lower layer being at most 0.5 mass % in relation to the mass of the lower layer, the upper layer containing Rh, alumina, and CeO2, the amount of noble metals other than Rh contained being 1 mol % or less in relation to the total amount of noble metals contained in the upper layer, the total amount of CeO2 contained in the lower layer and the upper layer being 14 g/L to 30 g/L, the amount of CeO2 contained in the upper layer being 7 g/L to 25 g/L, and the amount of CeO2 contained in the lower layer being 20% or more of the amount of CeO2 contained in the upper layer.

Abstract: An exhaust gas purification underfloor catalyst characterized in having a catalyst layer having a lower layer and an upper layer, the lower layer containing alumina and CeO2, the noble metal content of the lower layer being at most 0.5 mass % in relation to the mass of the lower layer, the upper layer containing Rh, alumina, and CeO2, the amount of noble metals other than Rh contained being 1 mol % or less in relation to the total amount of noble metals contained in the upper layer, the total amount of CeO2 contained in the lower layer and the upper layer being 14 g/L to 30 g/L, the amount of CeO2 contained in the upper layer being 7 g/L to 25 g/L, and the amount of CeO2 contained in the lower layer being 20% or more of the amount of CeO2 contained in the upper layer.

Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: The disclosure provides methods and compositions useful for culturing stem cell including embryonic stem cells, adult stem cells, and embryonic germ cells.

Abstract: Nickel, Ni, of 5 to 10 mass %, silicon, Si, of 0.5 to 5 mass %, manganese, Mn, of 0.01 to 1 mass %, carbon, C, of 0.2 to 2 mass % and a remaining part consisting of iron, Fe, and incidental impurities are employed, and further chromium, Cr, of 1 to 10 mass % is added to obtain a martensitic cast steel material for which a martensitic transformation finish temperature (Mf point) is below freezing. Further, a cast steel material that contains vanadium V of 0.1 to 5 mass % in addition to the above elements of the material is also obtained. For these cast steel materials, since martensitic transformation occurs merely by performing a sub-zero treatment, the tempering process can be comparatively easily performed, and machining in a desired shape is easily performed.

Abstract: The invention provides an exhaust gas purification catalyst comprising one or more catalyst coating layers having platinum and/or palladium with rhodium supported on a carrier, characterized in that the (platinum and/or palladium)/rhodium weight ratio is 1.0 or less.

Abstract: A reformer for a fuel cell system includes a heating source for generating heat by a reaction of a fuel and an oxidant using an oxidizing catalyst, and a reforming reaction part for generating hydrogen by a reforming catalyst reaction. The oxidizing catalyst includes a solid acid, including a strong acid ion and an inorganic oxide, and a platinum-based metal. The reformer for a fuel cell system can start a fuel oxidation catalyst reaction at a low temperature with the heating source having a simplified structure.

Abstract: The disclosure provides methods and compositions useful for culturing stem cell including embryonic stem cells, adult stem cells, and embryonic germ cells.

Abstract: To improve corrosion resistance in wet environments, for a martensitic cast steel material obtained at a predetermined composition ratio and martensitic steel casting products, and to provide a martensitic cast steel material that is appropriate for various types of molds and dies, mechanical parts, etc., and a manufacturing method for martensitic steel casting products. Nickel, Ni, of 5 to 10 mass %, silicon, Si, of 0.5 to 5 mass %, manganese, Mn, of 0.01 to 1 mass %, carbon, C, of 0.2 to 2 mass % and a remaining part consisting of iron, Fe, and incidental impurities are employed, and further chromium, Cr, of 1 to 10 mass % is added to obtain a martensitic cast steel material for which a martensitic transformation finish temperature (Mf point) is below freezing. Further, a cast steel material that contains vanadium V of 0.1 to 5 mass % in addition to the above elements of the material is also obtained.

Abstract: The invention provides an exhaust gas purification catalyst comprising one or more catalyst coating layers having platinum and/or palladium with rhodium supported on a carrier, characterized in that the (platinum and/or palladium)/rhodium weight ratio is 1.0 or less.

Abstract: To provide a method for industrially efficiently producing an exhaust gas purifying catalyst containing a perovskite-type composite oxide which is stable and has a less reduced specific surface area and is also effectively prevented from decreasing in its catalytic performance even in endurance in high temperature oxidative reducing atmospheres, a pre-crystallization composition containing elementary components constituting a perovskite-type composite oxide containing a noble metal is prepared, is mixed with a powder of theta-alumina and/or alpha-alumina to prepare a mixture, and the mixture is heat treated. Thus, the resulting perovskite-type composite oxide supported by the powder of theta-alumina and/or alpha-alumina can keep its thermostability at a sufficient level thereby to effectively prevent the catalytic performance from decreasing. This method can industrially efficiently produce the exhaust gas purifying catalyst.

Abstract: To provide a perovskite-type composite oxide which has stable quality in which a solid solution of Pd is formed at a high rate, a method for producing the perovskite-type composite oxide, and a catalyst composition containing the perovskite-type composite oxide, the perovskite-type composite oxide is produced by formulating materials in accordance with each atomic ratio of a perovskite-type composite oxide represented by the following general formula (1): AxB(1-y)PdyO3+???(1) wherein A represents at least one element selected from rare earth elements and alkaline earth metals; B represents at least one element selected from transition elements (excluding rare earth elements, and Pd), Al and Si; x represents an atomic ratio satisfying the following condition: 1<x; y represents an atomic ratio satisfying the following condition: 0<y?0.5; and ? represents an oxygen excess.

Abstract: NOx emission is decreased both in the transient phase and in the cold start phase. An exhaust gas-purifying catalyst includes an oxygen storage material having an average particle diameter falling within a range of 1 nm to 1,000 nm.