Abstract: A focus adjustment method for a camera module equipped with an optical system, an image sensor, and a camera substrate to which said image sensor is mounted. The focus adjustment method includes a measurement step of measuring an installation position and an installation angle of the image sensor on the camera substrate, an adjustment step of adjusting a position and an angle of the camera substrate relative to the optical system, and an assembly step of assembling the camera substrate to the optical system after adjusting the position and angle of the camera substrate. The adjustment step includes adjusting the position and angle of the camera substrate based on the installation position and angle of the image sensor as measured so that a position and an angle of the image sensor relative to the optical system become a set position and a set angle predefined according to the optical system.

Abstract: A focusing adjustment method of a camera module predicts, before completion of securing of a camera board to an optical system, a shrinkage deviation amount by which the optical system and the camera board will approach one another. The focusing adjustment method adjusts a position and an angle of the camera board to separate, by the predicted shrinkage deviation amount, the camera board from the optical system as compared with a focusing attitude of the image sensor with respect to the optical system where the optical system is in focus on the image sensor to accordingly offset the predicted shrinkage deviation amount.

Abstract: An inkjet printing apparatus includes a print head configured to print an image on a printing medium using a printing element configured to eject ink with thermal energy, a scanning unit configured to cause the print head to scan the printing medium, and a control unit configured to control scanning by the scanning unit and image printing by the print head based on an image printing instruction, wherein the control unit performs a control operation including executing a preliminary ejection to eject, from the print head, ink that does not contribute to image printing before an image is printed in one scanning operation, and determining an amount of ink to be ejected in the preliminary ejection based on a difference between a target temperature and a scanning start temperature, which is a temperature of the print head acquired in response to an instruction to start the one scanning operation.

Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Abstract: An exhaust gas purification underfloor catalyst characterized in having a catalyst layer having a lower layer and an upper layer, the lower layer containing alumina and CeO2, the noble metal content of the lower layer being at most 0.5 mass % in relation to the mass of the lower layer, the upper layer containing Rh, alumina, and CeO2, the amount of noble metals other than Rh contained being 1 mol % or less in relation to the total amount of noble metals contained in the upper layer, the total amount of CeO2 contained in the lower layer and the upper layer being 14 g/L to 30 g/L, the amount of CeO2 contained in the upper layer being 7 g/L to 25 g/L, and the amount of CeO2 contained in the lower layer being 20% or more of the amount of CeO2 contained in the upper layer.

Abstract: An exhaust gas purification underfloor catalyst characterized in having a catalyst layer having a lower layer and an upper layer, the lower layer containing alumina and CeO2, the noble metal content of the lower layer being at most 0.5 mass % in relation to the mass of the lower layer, the upper layer containing Rh, alumina, and CeO2, the amount of noble metals other than Rh contained being 1 mol % or less in relation to the total amount of noble metals contained in the upper layer, the total amount of CeO2 contained in the lower layer and the upper layer being 14 g/L to 30 g/L, the amount of CeO2 contained in the upper layer being 7 g/L to 25 g/L, and the amount of CeO2 contained in the lower layer being 20% or more of the amount of CeO2 contained in the upper layer.

Abstract: Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Abstract: The disclosure provides methods and compositions useful for culturing stem cell including embryonic stem cells, adult stem cells, and embryonic germ cells.

Abstract: Nickel, Ni, of 5 to 10 mass %, silicon, Si, of 0.5 to 5 mass %, manganese, Mn, of 0.01 to 1 mass %, carbon, C, of 0.2 to 2 mass % and a remaining part consisting of iron, Fe, and incidental impurities are employed, and further chromium, Cr, of 1 to 10 mass % is added to obtain a martensitic cast steel material for which a martensitic transformation finish temperature (Mf point) is below freezing. Further, a cast steel material that contains vanadium V of 0.1 to 5 mass % in addition to the above elements of the material is also obtained. For these cast steel materials, since martensitic transformation occurs merely by performing a sub-zero treatment, the tempering process can be comparatively easily performed, and machining in a desired shape is easily performed.

Abstract: The invention provides an exhaust gas purification catalyst comprising one or more catalyst coating layers having platinum and/or palladium with rhodium supported on a carrier, characterized in that the (platinum and/or palladium)/rhodium weight ratio is 1.0 or less.

Abstract: A reformer for a fuel cell system includes a heating source for generating heat by a reaction of a fuel and an oxidant using an oxidizing catalyst, and a reforming reaction part for generating hydrogen by a reforming catalyst reaction. The oxidizing catalyst includes a solid acid, including a strong acid ion and an inorganic oxide, and a platinum-based metal. The reformer for a fuel cell system can start a fuel oxidation catalyst reaction at a low temperature with the heating source having a simplified structure.

Abstract: The disclosure provides methods and compositions useful for culturing stem cell including embryonic stem cells, adult stem cells, and embryonic germ cells.

Abstract: To improve corrosion resistance in wet environments, for a martensitic cast steel material obtained at a predetermined composition ratio and martensitic steel casting products, and to provide a martensitic cast steel material that is appropriate for various types of molds and dies, mechanical parts, etc., and a manufacturing method for martensitic steel casting products. Nickel, Ni, of 5 to 10 mass %, silicon, Si, of 0.5 to 5 mass %, manganese, Mn, of 0.01 to 1 mass %, carbon, C, of 0.2 to 2 mass % and a remaining part consisting of iron, Fe, and incidental impurities are employed, and further chromium, Cr, of 1 to 10 mass % is added to obtain a martensitic cast steel material for which a martensitic transformation finish temperature (Mf point) is below freezing. Further, a cast steel material that contains vanadium V of 0.1 to 5 mass % in addition to the above elements of the material is also obtained.

Abstract: The invention provides an exhaust gas purification catalyst comprising one or more catalyst coating layers having platinum and/or palladium with rhodium supported on a carrier, characterized in that the (platinum and/or palladium)/rhodium weight ratio is 1.0 or less.

Abstract: To provide a method for industrially efficiently producing an exhaust gas purifying catalyst containing a perovskite-type composite oxide which is stable and has a less reduced specific surface area and is also effectively prevented from decreasing in its catalytic performance even in endurance in high temperature oxidative reducing atmospheres, a pre-crystallization composition containing elementary components constituting a perovskite-type composite oxide containing a noble metal is prepared, is mixed with a powder of theta-alumina and/or alpha-alumina to prepare a mixture, and the mixture is heat treated. Thus, the resulting perovskite-type composite oxide supported by the powder of theta-alumina and/or alpha-alumina can keep its thermostability at a sufficient level thereby to effectively prevent the catalytic performance from decreasing. This method can industrially efficiently produce the exhaust gas purifying catalyst.

Abstract: To provide a perovskite-type composite oxide which has stable quality in which a solid solution of Pd is formed at a high rate, a method for producing the perovskite-type composite oxide, and a catalyst composition containing the perovskite-type composite oxide, the perovskite-type composite oxide is produced by formulating materials in accordance with each atomic ratio of a perovskite-type composite oxide represented by the following general formula (1): AxB(1-y)PdyO3+???(1) wherein A represents at least one element selected from rare earth elements and alkaline earth metals; B represents at least one element selected from transition elements (excluding rare earth elements, and Pd), Al and Si; x represents an atomic ratio satisfying the following condition: 1<x; y represents an atomic ratio satisfying the following condition: 0<y?0.5; and ? represents an oxygen excess.

Abstract: NOx emission is decreased both in the transient phase and in the cold start phase. An exhaust gas-purifying catalyst includes an oxygen storage material having an average particle diameter falling within a range of 1 nm to 1,000 nm.

Abstract: The present invention relates to methods for maintaining the undifferentiated state of embryonic stem cells without the use of a feeder layer by activating the Wnt signal transduction pathway or by inhibiting glycogen synthase kinase-3 activity by contacting the cell with, inter alia, 6-bromoindirubin-3?-oxime. The present invention also relates to embryonic stem cell lines and cells derived therefrom that have been isolated and cultured in the absence of a feeder layer.