Abstract: A nitride-based group III-V compound semiconductor device includes a buffer layer, a first nitride semiconductor layer and a second nitride semiconductor layer successively stacked on a substrate, the first and the second nitride layers having their respective lattice constants a1 and a2 in the relation a1>a2, an ohmic source electrode and an ohmic drain electrode formed on the second nitride layer, and a piezoelectric effect film formed on at least a partial region between the electrodes, wherein the piezoelectric film exerts compressive stress of an absolute magnitude at least equivalent to that of tensile stress applied to the second nitride layer due to the difference (a1?a2) between the lattice constants of the first and second nitride layers.

Abstract: An electrode employing a nitride-based semiconductor of III-V group compound having a favorable ohmic characteristic and a producing method thereof are provided. The electrode includes a nitride-based semiconductor layer of III-V group compound, an electrode metal, and a metal oxide inserted therebetween. The metal oxide is preferably an oxide of metal element(s) permitting formation of a nitride semiconductor.

Abstract: In an electrode structure for a nitride III-V compound semiconductor device, a metallic nitride is used as an electrode material. A metallic material of the metallic nitride has a negative nitride formation free energy, and comprises at least one metal selected from a group consisting of IVa-group metals such as titanium and zirconium, Va-group metals such as vanadium, niobium, and tantalum, and VIa-group metals such as chromium, molybdenum, and tungsten.

Abstract: The electrode structure of the invention includes a p-type AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

Abstract: Each layer of a three-layer structure composed of semiconductor (collector layer 13)/metal (base layer 14)/semiconductor (emitter layer 15) is formed from a nitride. By so doing, one identical constituent element (N) is contained in both semiconductor layers and the metal layer. Because Nb of the NbN base layer 14 combines with N to form a nitride at a stoichiometric ratio of 1:1, the resulting metal nitride and nitride semiconductor exhibit the same stoichiometric ratio. Therefore, it becomes possible to form the base layer 14 and the emitter layer 15 spatially continuously (interface bonding of 1:1), so that a successful Schottky junction can be obtained. As a result, an MBT superior in electrical characteristics can be obtained. Thus, the semiconductor device has successful Schottky characteristics so that superior characteristics can be obtained.

Abstract: The electrode structure of the invention includes a p-type AlxGayIn1−x−yN (0≦ x< 1, 0≦ y≦ 1, x+ y≦ 1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

Abstract: The electrode structure of the invention includes a p-type AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

Abstract: A group III-V type nitride compound semiconductor device with superior characteristics and a method of readily manufacturing the same are provided. The group III-V type nitride compound semiconductor device has a metal nitride layer, an n-type contact layer, an n-type clad layer, a light emitting layer, a p-type clad layer and a p-type contact layer successively formed on an insulating substrate which has an opening in which an n-type electrode 8a is formed in contact with the metal nitride layer. A p-type electrode 9 is formed on the p-type contact layer 7. The area of the electrode closer to the substrate can be increased without degrading the mechanical strength of the substrate, and the operating voltage of the semiconductor device can thus be reduced.

Abstract: A nitride-type III-V group compound semiconductor device includes a substrate and a layered structure including at least a channel layer using two-dimensional electron gas formed over a substrate, wherein the channel layer contains InN.

Abstract: A group III-V type nitride semiconductor device includes a substrate with a crystal structure of rutile type, CaC.sub.2 type, rock salt type, spinel type, NaFeO.sub.2 (II) type or LiAlO.sub.2 (I) type, and a nitride semiconductor layer epitaxially grown thereon. The substrate is selected so that its lattice constant allows good lattice match with respect to the nitride semiconductor layer, or the substrate is adjusted in composition to have such a lattice constant.

Abstract: A II-VI group compound semiconductor device includes a semiconductor substrate, a Zn.sub.X Mg.sub.1-X S.sub.Y Se.sub.1-Y (0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1) semiconductor layer formed on the semiconductor substrate, and an electrode layer formed on the semiconductor layer, the electrode layer containing an additive element of Cd or Te and a metal which can form a eutectic alloy with the additive element, thus achieving an electrode layer having a small contact resistance, especially an electrode layer with an ohmic contact.

Abstract: The electrode structure of the invention includes a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

Abstract: A group III-V type nitride compound semiconductor light-emitting device employing compound semiconductors the lattices of which are matched to each other and having a large band discontinuity value between the semiconductor layers is characterized in that it is a light-emitting device obtained by junction of a barrier layer and an active layer and that the active layer contains Nb. The present invention provides a group III-V type nitride compound semiconductor light-emitting device which has low threshold current and low threshold voltage characteristics.

Abstract: A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.

Abstract: A II-VI group compound semiconductor device comprising a Zn.sub.X Mg.sub.1-X S.sub.Y Se.sub.1-Y (0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer containing Ni, Pt or Pd formed on the intermediate layer.

Abstract: A semiconductor light-emitting device of the present invention includes a nitride type alloy semiconductor layer. The nitride type alloy semiconductor layer is made of Al.sub.a Ga.sub.b In.sub.1-a-b N (0.ltoreq.a.ltoreq.1, 0.ltoreq.b .ltoreq.1, a+b.ltoreq.1) including at least one selected from the group consisting of Sc, Ti, V, Cr, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.

Abstract: An optoelectronic semiconductor device is provided in which carrier transport towards the active region thereof is enhanced by the formation of a miniband within a superlattice region of the device having a repeating pattern of first and second semiconductor regions. The minimum energy level of the miniband is equal to or greater than the energy level of a guiding region between the active region and the superlattice region.

Abstract: The electrode structure of the invention includes a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

Abstract: A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.

Abstract: The electrode structure of the invention includes an n-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer is made of a metal silicide and, when a metal contained in the metal silicide is nitrified, a free energy of the metal nitride becomes smaller than a free energy of the metal contained in the metal silicide.