Abstract: An electro-optic device includes a pixel section and a terminal section through which a semiconductor circuit or a wiring board is mounted around the pixel section. The terminal section has a multilayer structure including a terminal connection wire including an uppermost layer containing titanium, a terminal interlayer made of an electroconductive material capable of being wet-etched, and a terminal transparent electroconductive film in that order from below.

Abstract: An optical connector plug is comprised of a pair of divided front and rear housings formed generally in a quadrilateral tubular shape for receiving a ferrule to hold an optical fiber. A housing, one of the housings is provided with engagement openings on at least opposite wall portions thereof, and the other housing is provided with engagement projections on its opposite wall portions to be engaged in the engagement openings. Furthermore, fitting projections are formed in the longitudinal direction on the wall portions in which the engagement openings are formed, and fitting recesses to be fitted with the fitting projections are formed in the wall portions on which the engagement projections are formed. The pair of housings are firmly joined to each other by engaging the engagement projections with the engagement openings and by fitting and engaging the fitting projections in the fitting recesses.

Abstract: A portion of a protective layer located above a connection portion is removed to expose the connection portion which is formed of the same material as used for a data line DL in this removed portion. Then, a transparent conductive layer made of ITO is further formed on these films. The transparent conductive layer and a bump are then connected via an AFC.

Abstract: On a first substrate are formed a TFT provided to each pixel, an insulating film which covers the TFT, and a reflective layer which is provided on the insulating film so as to be insulated from the TFT and reflects light incident from a second substrate side. The reflective layer is covered with a passivation film on which a first electrode made of a transparent conductive material, such as ITO having the work function equivalent to a second electrode, is formed and connected to the TFT. The passivation film covering the reflective layer prevents the reflective surface of the reflective layer from deteriorating in reflection properties during a process for connecting the TFT and the first electrode. Further, the first and second electrodes having similar characteristics can symmetrically AC drive the liquid crystal layer.

Abstract: A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 ? or less or in a range approximately from 750 ? to 1250 ?. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Abstract: An electro-optic device includes a pixel section and a terminal section through which a semiconductor circuit or a wiring board is mounted around the pixel section. The terminal section has a multilayer structure including a terminal connection wire including an uppermost layer containing titanium, a terminal interlayer made of an electroconductive material capable of being wet-etched, and a terminal transparent electroconductive film in that order from below.

Abstract: On a first substrate are formed a TFT provided to each pixel, an insulating film which covers the TFT, and a reflective layer which is provided on the insulating film so as to be insulated from the TFT and reflects light incident from a second substrate side. The reflective layer is covered with a passivation film on which a first electrode made of a transparent conductive material, such as ITO having the work function equivalent to a second electrode, is formed and connected to the TFT. The passivation film covering the reflective layer prevents the reflective surface of the reflective layer from deteriorating in reflection properties during a process for connecting the TFT and the first electrode. Further, the first and second electrodes having similar characteristics can symmetrically AC drive the liquid crystal layer.

Abstract: On a first substrate, a TFT which is a switching element is provided for each pixel, and above an insulating film covering this TFT, a reflective layer which is insulated from the TFT and which reflects light entering a second substrate and transmitting through a second electrode made of ITO is formed. Further, a first electrode having a work function similar to that of the second electrode and made of a transparent conductive material such as ITO is formed closer to a liquid crystal layer than the reflective layer, and this first electrode is connected with the TFT. With this configuration, the liquid crystal layer can be symmetrically AC driven by the first and second electrodes. A reliable connection between the first electrode and the TFT is provided through a connection metal layer made of a refractory metal.

Abstract: On a first substrate are formed a TFT provided to each pixel, an insulating film which covers the TFT, and a reflective layer which is provided on the insulating film so as to be insulated from the TFT and reflects light incident from a second substrate side. The reflective layer is covered with a passivation film on which a first electrode made of a transparent conductive material, such as ITO having the work function equivalent to a second electrode, is formed and connected to the TFT. The passivation film covering the reflective layer prevents the reflective surface of the reflective layer from deteriorating in reflection properties during a process for connecting the TFT and the first electrode. Further, the first and second electrodes having similar characteristics can symmetrically AC drive the liquid crystal layer.

Abstract: According to the present invention, there is provided a display, in which the degradation of a displaying quality caused by a turbulently reflected light beam at the time of exposure can be suppressed. The display according to the present invention having a reflective region and a transmissive region comprises a projecting insulating layer formed in a region corresponding to the reflective region on a substrate and a light shielding layer formed under the projecting insulating layer and formed to extend at least up to a region in which a side end of the projecting insulating layer is located.

Abstract: A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 ? or less or in a range approximately from 750 ? to 1250 ?. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Abstract: In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper (55) is removed. The ion stopper (55) does not remain in the interlayer insulating film (8) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (55), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (4). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer 4 is 1018 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.

Abstract: An LCD apparatus having a liquid crystal layer sealed between a first substrate having a first electrode and a second substrate having a second electrode, wherein the first substrate comprises a reflective layer formed only in a subregion within a pixel region, for reflecting light. A transparent conductive material is used for the first electrode and the first electrode made of the transparent conductive material is layered to cover a transmissive region within a pixel region and over the reflective layer in a reflective region within the pixel region to directly cover the reflective layer.

Abstract: On a first substrate, a TFT which is a switching element is provided for each pixel, and above an insulating film covering this TFT, a reflective layer which is insulated from the TFT and which reflects light entering a second substrate and transmitting through a second electrode made of ITO is formed. Further, a first electrode having a work function similar to that of the second electrode and made of a transparent conductive material such as ITO is formed closer to a liquid crystal layer than the reflective layer, and this first electrode is connected with the TFT. With this configuration, the liquid crystal layer can be symmetrically AC driven by the first and second electrodes. A reliable connection between the first electrode and the TFT is provided through a connection metal layer made of a refractory metal.

Abstract: A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 ? or less or in a range approximately from 750 ? to 1250 ?. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Abstract: A portion of a protective layer located above a connection portion is removed to expose the connection portion which is formed of the same material as used for a data line DL in this removed portion. Then, a transparent conductive layer made of ITO is further formed on these films. The transparent conductive layer and a bump are then connected via an AFC.

Abstract: A protection film on connection wiring is partly removed. The connection wiring, made of a material identical with that of a data line DL, is exposed at a portion where the protection film is removed. A bump is connected to the exposed connection wiring.