Abstract: A method of focus measurement of the embodiment irradiates exposure light from a first direction and projects first and second line-and-space patterns on a substrate. Further, exposure light is irradiated from a second direction and third and fourth line-and-space patterns are projected on the substrate. By measuring a distance between the first and third line-and-space patterns on the substrate, a sum of a dislocated amount caused by dislocation of focus and an overlap dislocation amount between the first and third line-and-space patterns is calculated as a first dislocated amount. Further, by measuring a distance between the second and fourth line-and-space patterns on the substrate, an overlap dislocation amount between the second and fourth line-and-space patterns is calculated as a second dislocation amount. Further, based on the first and second dislocation amounts, the focus dislocation amount is calculated.

Abstract: According to one embodiment, a deflection measuring device that irradiates an effective region of a pattern transfer plate on which a pattern is formed, with parallel lights from at least two directions, and detects interference fringes of the parallel lights reflected from the effective region.

Abstract: According to one embodiment, a method for controlling an exposure apparatus includes calculating a shift from a target value of an illuminance distribution on a reticle of light irradiated onto the reticle. The calculating is based on a relational expression and a measured value of an illuminance distribution on a wafer of light irradiated onto the wafer via a projection optical system. The relational expression has a correlation between the illuminance distribution on the reticle, the illuminance distribution on the wafer, and a spread function reflecting a characteristic of the projection optical system projecting light obtained by way of the reticle onto the wafer.

Abstract: In a pattern shape adjustment method according to one embodiment, a correspondence relation between a first shape feature amount of a first on-substrate pattern formed on a first substrate and a first laser band width of laser light as exposure light used when forming the first on-substrate pattern is acquired. Also, a second shape feature amount of a second on-substrate pattern actually formed on a second substrate is measured. Then, a second laser band width according to the shape of a third on-substrate pattern to be formed on a third substrate is calculated based on the correspondence relation and the second shape feature amount. Further, the third substrate is exposed to laser light having the second laser band width.

Abstract: According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; a second line pattern, second lines extending in the first direction, the second lines being arranged in the second direction in the second line pattern, the second line pattern capable of forming a second moire pattern by overlapping with the arrangement pattern; and a reference pattern with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.

Abstract: In an overlay displacement amount measuring method according to an embodiment, a temperature distribution of a substrate during a pattern forming process and a temperature distribution of the substrate during a measuring process for measuring a positional displacement amount between patterns on the substrate by an electron microscope are measured. An expansion/contraction amount of the substrate between two processes is calculated based upon the two temperature distributions, and the positional displacement amount is corrected based upon the expansion/contraction amount. An overlay displacement amount between the pattern and a pattern formed on a layer different from the pattern is measured by an optical measuring apparatus, and the overlay displacement amount is corrected based upon the corrected positional displacement amount.

Abstract: According to one embodiment, an exposure apparatus includes a light blocking unit that blocks an exposure light reflected on a reflective mask at a part other than an aperture; a detection unit that measures a light intensity of the exposure light passed through the light blocking unit; and a calculation unit that calculates, based on the light intensity, a transfer characteristic when a pattern on the reflective mask is transferred to a substrate. In the light blocking unit, a position on an aperture plane and a position in an optical axis direction of the exposure light are adjusted. The calculation unit calculates the transfer characteristic based on the position in the optical axis direction in which the light intensity is maximized.

Abstract: According to one embodiment, a mask distortion measuring apparatus is provided, including a light source, a mask holding unit, a projection optical system, an imaging unit, and a distortion calculating unit. The mask holding unit holds masks overlaid with each other. The projection optical system forms a projection image of patterns provided on the masks by irradiating light from the light source to the masks. The imaging unit images the projection image. The distortion calculating unit calculates misalignment of another mask with respect to a mask to be a reference in the masks using the projection image imaged at the imaging unit.

Abstract: According to a flare measuring method in an embodiment, a reflective mask, in which one reflective coordinate in a slit direction in a mask surface is determined when one scanning coordinate is determined, is placed on a scanner that includes a reflective projection optical system. Moreover, a light intensity of the exposure light is measured by performing a scanning exposure on an illuminance sensor moved to a predetermined position in the slit direction in a slit imaging plane. Then, an amount of flare at an intra-slit position corresponding to a position of the illuminance sensor in the slit direction is calculated by using a light intensity of exposure light received from an intra-slit position that does not correspond to the position of the illuminance sensor in the slit direction in the exposure light.

Abstract: A method of focus measurement of the embodiment irradiates exposure light from a first direction and projects first and second line-and-space patterns on a substrate. Further, exposure light is irradiated from a second direction and third and fourth line-and-space patterns are projected on the substrate. By measuring a distance between the first and third line-and-space patterns on the substrate, a sum of a dislocated amount caused by dislocation of focus and an overlap dislocation amount between the first and third line-and-space patterns is calculated as a first dislocated amount. Further, by measuring a distance between the second and fourth line-and-space patterns on the substrate, an overlap dislocation amount between the second and fourth line-and-space patterns is calculated as a second dislocation amount. Further, based on the first and second dislocation amounts, the focus dislocation amount is calculated.

Abstract: An imprint apparatus according to embodiments includes a stage, a dropping unit that drops resist, an imprinting unit that presses a circuit pattern of a template against the resist on a transfer target substrate, an underlying position detecting unit, a correcting unit, and a dropping position control unit. The underlying position detecting unit detects a position of an underlying pattern on the transfer target substrate. The correcting unit corrects a dropping position of the resist on a basis of a position of the underlying pattern. The dropping position control unit causes the resist to be dropped onto a dropping position after correction on the transfer target substrate on the basis of corrected dropping position.

Abstract: According to one embodiment, an exposure system includes: a supporting stage; a plurality of masks provided on an upper side of the supporting stage; and a light source being capable of irradiating a substrate with light through the plurality of masks, the plurality of masks including: a first mask, and a light shielding film being patterned in the first mask; and a second mask provided on an upper side or a lower side of the first mask, the second mask including a second region facing a first region of the first mask, the light shielding film not being present in the first region, and a light shielding film not being patterned in the second region or the light shielding film being patterned in at least a part of the second region, and a plurality of laser-irradiated marks being provided in at least the second region of the second mask.

Abstract: According to one embodiment, an electrostatic chuck is capable of holding a reticle by electrostatic attraction force. The reticle has a planar external shape of a rectangle or a square. The electrostatic chuck includes: a first attraction unit capable of attracting the reticle by the electrostatic attraction force; and a substrate supporting the first attraction unit. The first attraction unit is symmetrical with respect to a first line when the reticle is attracted to the first attraction unit. The first line crosses two opposing sides of the rectangle or the square.

Abstract: According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; a second line pattern, second lines extending in the first direction, the second lines being arranged in the second direction in the second line pattern, the second line pattern capable of forming a second moire pattern by overlapping with the arrangement pattern; and a reference pattern with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.

Abstract: According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.

Abstract: According to one embodiment, a method for controlling an exposure apparatus includes calculating a shift from a target value of an illuminance distribution on a reticle of light irradiated onto the reticle. The calculating is based on a relational expression and a measured value of an illuminance distribution on a wafer of light irradiated onto the wafer via a projection optical system. The relational expression has a correlation between the illuminance distribution on the reticle, the illuminance distribution on the wafer, and a spread function reflecting a characteristic of the projection optical system projecting light obtained by way of the reticle onto the wafer.

Abstract: According to one embodiment, a patterning method includes releasing the template from the cured imprint resist, aligning an alignment mark formed in the non-imprint portion of the template with the transfer pattern of the alignment pattern without causing the alignment mark to contact the imprint resist, and causing the main pattern and the alignment pattern of the template to contact an imprint resist that is supplied to a shot region adjacent to the cured imprint resist and uncured. The method includes curing the imprint resist of the adjacent shot region in the state of the template being in contact to form the transfer pattern of the main pattern and the transfer pattern of the alignment pattern in the imprint resist.

Abstract: An imprint apparatus according to embodiments includes a stage, a dropping unit that drops resist, an imprinting unit that presses a circuit pattern of a template against the resist on a transfer target substrate, an underlying position detecting unit, a correcting unit, and a dropping position control unit. The underlying position detecting unit detects a position of an underlying pattern on the transfer target substrate. The correcting unit corrects a dropping position of the resist on a basis of a position of the underlying pattern. The dropping position control unit causes the resist to be dropped onto a dropping position after correction on the transfer target substrate on the basis of corrected dropping position.

Abstract: According to a flare measuring method in an embodiment, a reflective mask, in which one reflective coordinate in a slit direction in a mask surface is determined when one scanning coordinate is determined, is placed on a scanner that includes a reflective projection optical system. Moreover, a light intensity of the exposure light is measured by performing a scanning exposure on an illuminance sensor moved to a predetermined position in the slit direction in a slit imaging plane. Then, an amount of flare at an intra-slit position corresponding to a position of the illuminance sensor in the slit direction is calculated by using a light intensity of exposure light received from an intra-slit position that does not correspond to the position of the illuminance sensor in the slit direction in the exposure light.

Abstract: According to one embodiment, an exposure apparatus inspection mask includes a substrate and a first pattern portion. The substrate has a major surface reflective to exposure light. The first pattern portion is provided on the major surface. The first pattern portion includes a first lower layer and a plurality of first reflection layers. The first lower layer is provided on the major surface and includes a plurality of first absorption layers periodically arranged at a prescribed pitch along a first direction parallel to the major surface and is absorptive to the exposure light. The plurality of first reflection layers are provided on a side of the first lower layer opposite to the substrate, are periodically arranged at the pitch along the first direction, expose at least part of each of the plurality of first absorption layers, and have higher reflectance for the exposure light than the first absorption layers.