Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A solid state imaging element including light receiving elements and microlenses is placed in a recess of a ceramic package. A black resin fills space between the ceramic package and the solid state imaging element.

Abstract: A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Abstract: A manufacturing method according to which surface unevenness of a workpiece on which microprocessing is performed such as a semiconductor substrate or a micromachine is readily flattened with a higher degree of flatness than the prior art even when depressions vary in depth, to thus facilitate the processing of the surface in a subsequent process. The manufacturing method includes the processes of applying a photosensitive resin 2 over the surface of a workpiece 1, exposing the applied resin using a grayscale mask 3 that corresponds to the surface shape of the resin, and developing the exposed resin and eliminating unhardened resin.

Abstract: The solid-state image sensor in the present invention includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses 7 corresponding to the light-receiving elements, and has a flattening film 8 formed on the plurality of the micro-lenses. At the center of the light-receiving area, micro-lenses 7 are placed in positions directly above the corresponding photodiodes 1, and placed in positions which are progressively offset from the positions directly above the corresponding photodiodes 1, towards the center of the light receiving area, as micro-lenses 7 are located farther from the center of the light-receiving area.

Abstract: A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film of the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying.

Abstract: A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability. A thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film, the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film to the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying.

Abstract: Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Abstract: A solid state camera element having photodiode provided on a matrix and shielding film formed in the layer above the circumference of photodiode, wherein fluorescence film is provided in the layer above any one of photodiodes or in the layer above photodiode, extending from the top surface to the lower layer of shielding film. Interference filter of one or multiple layers is provided in the layer above fluorescence film for transmitting an absorption wavelength and reflecting a luminescence wavelength of the fluorescence film. Also, N well of photodiode is formed deep in the substrate and the peak wavelength of sensitivity is shifted to a longer wavelength side from the normal setting peak value of 550 nm. Therefore, the present invention can enhance the blue sensitivity of the solid state camera element by using fluorescent pigment without causing cross talk with a neighboring photodiode.

Abstract: An improved solid-state image sensor is provided by having an image sensing element composed of photoelectric conversion parts, a microlens formed on the surface of the image sensing element corresponding to each photoelectric conversion part, and optical fiber bundle formed of optical fibers arranged in a two-dimensional shape and mounted on the microlens. The optical fiber bundle is also composed of a core and a clad portion. The refractive index of a filler which mounts the optical fiber bundle on the microlens is less than that of the microlens and greater than that of the clad portion of each of the optical fibers.

Abstract: The solid-state image sensor device includes a photodiode section having a storage region of a second conductivity type and a surface layer of a first conductivity type, a vertical CCD register having a buried layer of the second conductivity type and a plurality of transfer electrodes, and a transfer gate having a transfer gate electrode. A channel control region of the second conductivity type is provided on a surface of the semiconductor substrate region covered by the transfer gate. With the channel control region of the second conductivity type provided at a surface portion of the semiconductor substrate region of the transfer gate, the charge read-out channel for reading out charge from the storage region into the buried layer may be readily formed. Thus, it is possible to reduce the read-out voltage or reduce the gate length of the transfer gate.

Abstract: In a bolometer-type infrared detecting apparatus, a bolometer and a MOS transistor are provided for one pixel. A source of the MOS transistor is connected to a power supply terminal. A drain of the MOS transistor is connected to the bolometer which is connected via a switch to an output terminal.

Abstract: An infrared ray image pickup device has a two-dimensional array structure having a sensor substrate, a plurality of scanning circuits provided to form two dimensional arrays on a surface of the substrate, a layer having a plurality of cavities provided over the scanning circuits, a plurality of beams provided to extend over the cavities, each of the beams including an element for converting a temperature variation to an electric signal, a supporting element provided on a peripheral region of the substrate for supporting a lens substrate including a plurality of micro-lenses that are located to face the beams so that a convex portion of each of the micro-lenses is spaced from a top of each of the beams by the same distance as a focal distance of the micro-lenses. The supporting element may have a plurality of convex portions made of boron phosphate silicate glass or boron silicate glass.

Abstract: White, yellow, and cyan color filters are superposed in rows and columns on picture elements of a solid-state color imaging apparatus. In each recurring cycle of four-row and two-column filters, the green component of light is transmitted through all filters.

Abstract: A solid-state color imaging apparatus having a plurality of picture elements for converting incident light to signal charges with the picture elements being arrayed regularly in both a horizontal direction and a vertical direction to form horizontal rows and vertical columns. First color filters are on the picture elements in odd numbered rows for providing modulation characteristics of color components and causing the picture elements in the odd numbered rows to generate a first color difference signal. Second color filters are on the picture elements in even numbered rows for providing modulation characteristics of color components and causing the picture elements in the even numbered rows to generate a second color difference signal. The first and second color difference signals are substantially zero when achromatic light is incident upon the picture elements or is picked up at a reference color temperature.

Abstract: A solid-state image sensor includes a color filter covering a solid-state imaging device and having at least three kinds of filter elements arranged in rows and columns. Each of the filter elements transmits red, green, and blue light over its entire surface area with a transmittance of at least 20 to 80 percent for each color light.

Abstract: A semiconductor imager comprises a first and a second region (41, 42) which have a conductivity type opposite to a substrate (21) and are reverse biassed relative to the substrate beneath photosensitive regions (22) of each row and a reading device (26, 33) for the row, respectively, to be completely and not to be completely depleted, respectively. The imager may or may not comprise such a covering region (77) on each photosensitive region as may have the conductivity type of the first and the second regions and be not completely depleted. It is possible to provide a line sensor or a photodiode of a similar structure. Preferably, the first and the second regions have a common impurity concentration lower than the photosensitive regions and are respectively thinner and thicker relative to each other. The covering region preferably has the impurity concentration of each channel stopper (23).