Patents by Inventor Nobuo Komatsu

Nobuo Komatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device having means for providing a precharge voltage equivalent to a prescribed selection voltage
    Patent number: 4941128
    Abstract: A dynamic type RAM is provided wherein the level of a precharge control signal supplied to a gate of a precharge MOSFET to precharge complementary data lines to a half level is made the half level during a period from the memory access until the selection of the word line, at the latest. Also, the precharge control signal, corresponding to a memory mat selected according to establishing of an address, is set to a low level, while the precharge control signal corresponding to a non-selective memory mat is set to a high level.
    Type: Grant
    Filed: April 25, 1988
    Date of Patent: July 10, 1990
    Assignees: Hitachi, Ltd., Hitachi VLSI Engineering Corp.
    Inventors: Shouji Wada, Nobuo Komatsu, Mitsuhiro Takano, Sinichi Miyatake, Kazuo Mihashi, Hiromi Tsukada