Abstract: A shift register type memory having major and minor loops, wherein the number of bits of the major loop is large enough to permit data of at least two blocks to simultaneously exist in the major loop when one block is constituted of data of bits the number of which is equal to the number of the minor loops, and wherein before a particular block having been transferred out from the minor loops to the major loop is again transferred in to the minor loops after travelling round the major loop, the next block is transferred out from the minor loops to the major loop.

Abstract: A shift register type memory device according to this invention includes on the same chip as that of an information storing medium, a functional part which identifies defect loops and controls the writing and reading of information so as to exclude them. The functional part includes a defect loop address memory which stores locations of the defect loops in the binary expression, and a common detector which reads out information from the defect loop address memory and information from storage loops.

Abstract: In a magnetic bubble module comprising magnetic bubble chips disposed on substrates and driving coils surrounding the magnetic bubble chips, at least one of the substrates extends from the inside to the outside of the coils and serves as a heat transfer plate. The heat transfer plate includes at least one metal foil having a thickness smaller than a skin depth of the metal.

Abstract: A magnetic bubble information writing device in which a conductor loop is disposed on the magnetic bubble propagation circuit and in which magnetic bubbles are generated by sending pulse current through the conductor loop, the device having a means which after having sent the bubble generating pulse current through the conductor loop, sends pulse current for annihilating stray bubbles through the same, the stray bubble annihilating pulse current having a polarity opposite to that of the bubble generating pulse current.

Abstract: A bubble domain driving apparatus is provided in which a large memory device with a storage capacity of 256 megabits, for example, is divided into 64 smaller memory elements, each thereof comprising one or plurality of thin magnetic film strips for bubble domain, and each of the 4-megabit smaller memory elements is provided with its own coils for applying in the plane thereof bubble domain driving rotating fields with the coils adapted to be selectively energized.