Abstract: A display device is provided. The device comprises light emitting elements and a protection layer. The light emitting elements include lower electrodes isolated by an insulator portion, an organic layer including a light emitting layer arranged on the lower electrodes, and an upper electrode covering the organic layer. The insulator portion includes a first portion arranged on the lower electrodes, and a second portion arranged between the lower electrodes. The protection layer covers the upper electrode, and is provided with an isolating portion that is arranged over the second portion and has a refractive index different from the protection layer. A height of an upper surface of a portion of the upper electrode arranged under the isolating portion is lower than a height of an upper surface of a portion of the upper electrode arranged over the first portion.

Abstract: A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and an insulating film configured to cover at least a side face of each of the first electrodes. The insulating film includes a first insulating layer configured to cover at least a part of the side face of each of the first electrodes, and a second insulating layer configured to cover the side face. The first insulating layer is arranged between the side face and the second insulating layer, and includes a first part and a second part whose density is lower than a density of the first part.

Abstract: A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: An organic light emitting apparatus including a first electrode, a second electrode, and an organic layer disposed between the first electrode and the second electrode and including a light emitting layer. The first electrode includes a metallic layer containing a first metal and a mixture layer disposed between the metallic layer and the organic layer. The mixture layer contains the first metal and a second metal having lower reflectance than the first metal.

Abstract: An embodiment provides a display device including an insulating layer which is continuous between opposed ends of two adjacent lower electrodes from an upper part of one of the ends to an upper part of the other end, a first organic layer which is disposed over the lower electrodes and the insulating layer, a second organic layer which is disposed over the lower electrodes and the insulating layer with the first organic layer interposed therebetween and includes a light emitting layer, and a second electrode which covers the organic layer. The upper face of the insulating layer includes a recess between the two lower electrodes. The aspect ratio of the recess is 0.5 or more.

Abstract: A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and an insulating film configured to cover at least a side face of each of the first electrodes. The insulating film includes a first insulating layer configured to cover at least a part of the side face of each of the first electrodes, and a second insulating layer configured to cover the side face. The first insulating layer is arranged between the side face and the second insulating layer, and includes a first part and a second part whose density is lower than a density of the first part.

Abstract: An organic light emitting device including a first electrode arranged on a first insulation layer, a second insulation layer that covers an end of the first electrode, an organic layer arranged on the first electrode and the second insulation layer and including a light emission layer, and a second electrode arranged on the organic layer, wherein in a cross section including the first insulation layer, the first electrode, and the second insulation layer, the second insulation layer has an eaves shape.

Abstract: An organic light emitting apparatus including a first electrode, a second electrode, and an organic layer disposed between the first electrode and the second electrode and including a light emitting layer. The first electrode includes a metallic layer containing a first metal and a mixture layer disposed between the metallic layer and the organic layer. The mixture layer contains the first metal and a second metal having lower reflectance than the first metal.

Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.

Abstract: A display device is provided. The device comprises light emitting elements and a protection layer. The light emitting elements include lower electrodes isolated by an insulator portion, an organic layer including a light emitting layer arranged on the lower electrodes, and an upper electrode covering the organic layer. The insulator portion includes a first portion arranged on the lower electrodes, and a second portion arranged between the lower electrodes. The protection layer covers the upper electrode, and is provided with an isolating portion that is arranged over the second portion and has a refractive index different from the protection layer. A height of an upper surface of a portion of the upper electrode arranged under the isolating portion is lower than a height of an upper surface of a portion of the upper electrode arranged over the first portion.

Abstract: A display device includes an electrode structure including a first electrode arranged on a substrate and a member arranged on the first electrode, an insulator configured to cover a peripheral portion of the electrode structure, an organic film configured to cover the first electrode and the insulator, and a second electrode configured to cover the organic film. The member includes a first portion arranged in the peripheral portion of the electrode structure so as to cover a peripheral portion of an upper face of the first electrode, and a reflectance of the peripheral portion of the electrode structure is lower than a reflectance of a central portion that is a portion inside the peripheral portion of the electrode structure.

Abstract: A method of manufacturing an electronic device, comprising fixing a first wafer on a second wafer to form a space theirbetween, via a surrounding member configured to surround the space, forming an opening on a bottom side of the first wafer to expose a conductive member included in the first wafer, and then forming an electrode connected to the conductive member, wherein, in the fixing, the first wafer includes a trench intersecting the surrounding member, on an upper side of the first surface, and, in the forming, the electrode is formed under a condition that the space communicates with an external space via the trench.

Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Abstract: There is provided an imaging device manufacturing method contributing to improved reliability and yield. The method includes forming a first insulating film on a polysilicon film and then removing a portion of the first insulating film formed on a second main surface and a portion of the first insulating film formed on a side surface of the substrate to expose a polysilicon film. After the polysilicon film is exposed, a second insulating film is formed on the first main surface by a plasma chemical vapor deposition (CVD) method.

Abstract: A method for manufacturing a photoelectric conversion device comprising the steps of fixing a first substrate including a semiconductor layer provided with a photoelectric conversion element, to a second substrate, thinning the first substrate fixed to the second substrate, from the opposite side of the first substrate from the second substrate, fixing the first substrate to a third substrate provided with a semiconductor element such that the third substrate is located on the opposite side of the first substrate from the second substrate, and removing the second substrate after the step of fixing the first substrate to the third substrate.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: A method of manufacturing an electronic device, comprising fixing a first wafer on a second wafer to form a space theirbetween, via a surrounding member configured to surround the space, forming an opening on a bottom side of the first wafer to expose a conductive member included in the first wafer, and then forming an electrode connected to the conductive member, wherein, in the fixing, the first wafer includes a trench intersecting the surrounding member, on an upper side of the first surface, and, in the forming, the electrode is formed under a condition that the space communicates with an external space via the trench.

Abstract: A semiconductor device includes a semiconductor layer having a front surface on which a transistor is provided and a back surface opposite to the front surface, and a conductive member that penetrates through the semiconductor layer. In the semiconductor device, between a second plane including the back surface and a third plane, a solid material that is an insulator is provided between the conductive member and the semiconductor layer, and, between a first plane including the front surface and the third plane, a hollow part is provided between the conductive member and the semiconductor layer, and a center of the hollow part in a direction crossing the first plane and the second plane is positioned between the first plane and the third plane.