Abstract: There is provided an imaging device manufacturing method contributing to improved reliability and yield. The method includes forming a first insulating film on a polysilicon film and then removing a portion of the first insulating film formed on a second main surface and a portion of the first insulating film formed on a side surface of the substrate to expose a polysilicon film. After the polysilicon film is exposed, a second insulating film is formed on the first main surface by a plasma chemical vapor deposition (CVD) method.

Abstract: A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.

Abstract: A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

Abstract: A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a first element region, a second element region adjacent to the first element region in a first direction, a third element region adjacent to the first region in a second direction, and a first scribe region extending to the first direction between the first element region and the third element region, forming a first trench in the passivation film between the first scribe region and the first element region, forming a second trench in the passivation film between the third element region and the first scribe region, and forming a film on the passivation film where the trenches have been formed by coating. The each of trenches is formed continuously along the first and the second element region.

Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Abstract: A method for cleaning a base for supporting an object to process in an apparatus configured to perform a heat process, the method comprising a first step of forming an oxide film on the base including silicon carbide, by subjecting the base to a heat process in a gas atmosphere including oxygen, and a second step of, after the first step, subjecting the base to a heat process in a gas atmosphere including steam, wherein the first step is performed for 10 hours at a temperature of 1000° C. or more.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.

Abstract: A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.

Abstract: A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

Abstract: A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a first element region, a second element region adjacent to the first element region in a first direction, a third element region adjacent to the first region in a second direction, and a first scribe region extending to the first direction between the first element region and the third element region, forming a first trench in the passivation film between the first scribe region and the first element region, forming a second trench in the passivation film between the third element region and the first scribe region, and forming a film on the passivation film where the trenches have been formed by coating. The each of trenches is formed continuously along the first and the second element region.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.

Abstract: A method for cleaning a base for supporting an object to process in an apparatus configured to perform a heat process, the method comprising a first step of forming an oxide film on the base including silicon carbide, by subjecting the base to a heat process in a gas atmosphere including oxygen, and a second step of, after the first step, subjecting the base to a heat process in a gas atmosphere including steam, wherein the first step is performed for 10 hours at a temperature of 1000° C. or more.

Abstract: A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.

Abstract: A method of manufacturing an image sensor includes forming a resist film with a thickness of not less than 7 ?m on a substrate having an effective region including a pixel array region and a peripheral region, and a non-effective region, forming a resist pattern including first, second and third openings from the resist film, and implanting ions into the pixel array region through the first, second and third openings. The first opening is arranged in the effective region to implant the ions into the pixel array region, the third opening is arranged in the non-effective region, and at least a part of the second opening is arranged between the first opening and the third opening, and a minimum curvature radius of an edge of the second opening is larger than that of the third opening.

Abstract: A method of manufacturing a solid-state image sensor includes forming a resist film with a thickness of not less than 7 ?m on a semiconductor substrate including an active region and an element isolation region, forming a resist pattern including an opening by performing a photolithography process on the resist film, and implanting ions into a pixel array region on the semiconductor substrate through the opening, wherein the opening of the resist pattern includes a corner portion, and the corner portion is positioned not above the element isolation region but above the active region.

Abstract: Provided is a film formation apparatus capable of causing a substrate and a mask to be in a substantially horizontal state and brought into intimate contact with each other without deforming mask apertures. A region inside a mask frame and outside aperture regions of a mask on a rear surface of a substrate is pressed by a pressing body in lines along two opposing sides of the substrate.

Abstract: Provided is an organic eletroluminescence display device, which is capable of preventing transfer of an attached matter from the vapor deposition mask to the insulating layer, without increasing steps or manufacturing cost. The organic eletroluminescence display device includes: a first insulating layer formed on a substrate; multiple first electrodes disposed on the first insulating layer; an opening formed in the first insulating layer at a periphery of the first electrode; a second insulating layer disposed in a region overlapping with the opening; an organic compound layer covering the first electrodes; and a second electrode formed on the organic compound layer, in which: a material forming the first electrodes is absent in the opening; and the second insulating layer has a recess formed in a surface thereof, reflecting the opening of the first insulating layer, the recess being formed in a vertical direction of the substrate surface.

Abstract: Provided is a film formation apparatus capable of reducing vibration and deformation that may be transmitted to an alignment mechanism and thereby suppressing misalignment between a substrate and a mask in a surface direction. The film formation apparatus includes: a film forming chamber; a supporting member; and an alignment mechanism provided on the supporting member in which: the supporting member includes a supporting plate for placing the alignment mechanism, and a leg portion; the supporting plate is provided so as to be spaced apart from a top board of the film forming chamber via the leg portion; and at least a part of the supporting plate is formed of a damping material capable of converting vibration transmitted to the supporting plate into thermal energy, thereby suppressing the vibration.