Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ?E2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ?E2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ?E2_LUMO and ?E2_HOMO is 0.1 eV or higher and 0.5 eV or less.

Abstract: A semiconductor device includes: a resin substrate; a display element configured to generate an image; and a circuit layer including a thin film transistor configured to control the display element. The resin substrate has a main body made of resin and a surface layer made of the resin laminated on the main body. The surface layer has a lower electrification property than the main body or the surface layer has a lower film density than the main body. Each of the display element and the circuit layer is on the surface layer.

Abstract: According to one embodiment, in a display device, end portions of a hole-transport layer, a light emitting layer and an electron-transport layer provided in a pixel are spaced apart from end portions of applicable layers of an adjacent pixel. The electron-transport layer includes a first area and a second area having a film thickness greater than that of the first area. The second area overlaps a common electrode, and the first area does not overlap the common electrode.

Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: A display device includes an organic insulating layer, a first inorganic insulating layer, and a second inorganic insulating layer arranged in a first region and a second region, a plurality of pixels arranged in the first region, a protective film arranged in the second region and in contact with an upper surface of the second inorganic insulating layer in the second region, and a groove portion is provided in the organic insulating layer in the second region. A side surface and a bottom surface of the groove portion is covered by the first inorganic insulating layer and the second inorganic insulating layer. The protective film is overlapped with an upper surface of the organic insulating layer and an upper end portion and a part of the side surface of the groove portion.

Abstract: A display device includes a flexible substrate, a display portion provided on a first surface of the flexible substrate and including a plurality of pixels, a first penetrating wiring located to penetrate the flexible substrate, and a second penetrating wiring located to penetrate the flexible substrate at a position farther from the display portion than the first penetrating wiring. The flexible substrate includes a curved portion between the first penetrating wiring and the second penetrating wiring. The first penetrating wiring and the second penetrating wiring are electrically connected with each other without being extended on the curved portion.

Abstract: A semiconductor device includes: a resin substrate; a display element configured to generate an image; and a circuit layer including a thin film transistor configured to control the display element. The resin substrate has a main body made of resin and a surface layer made of the resin laminated on the main body. The surface layer has a lower electrification property than the main body or the surface layer has a lower film density than the main body. Each of the display element and the circuit layer is on the surface layer.

Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: A display device according to an embodiment of the present invention includes: a substrate that includes a display region and a peripheral region; a display element that is provided on the display region of the substrate; and an electronic component that is provided in the peripheral region on an opposite surface from a surface of the substrate on which the display element is provided, wherein the substrate includes one or more through holes in the peripheral region, the one or more through holes include a through electrode formed by a laminate structure of a plurality of conductive layers, and the through electrodes electrically connect the display element to the electronic component.

Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: A display device includes a flexible substrate, a display portion provided on a first surface of the flexible substrate and including a plurality of pixels, a first penetrating wiring located to penetrate the flexible substrate, and a second penetrating wiring located to penetrate the flexible substrate at a position farther from the display portion than the first penetrating wiring. The flexible substrate includes a curved portion between the first penetrating wiring and the second penetrating wiring. The first penetrating wiring and the second penetrating wiring are electrically connected with each other without being extended on the curved portion.

Abstract: A display device according to an embodiment of the present invention includes: a substrate that includes a display region and a peripheral region; a display element that is provided on the display region of the substrate; and an electronic component that is provided in the peripheral region on an opposite surface from a surface of the substrate on which the display element is provided, wherein the substrate includes one or more through holes in the peripheral region, the one or more through holes include a through electrode formed by a laminate structure of a plurality of conductive layers, and the through electrodes electrically connect the display element to the electronic component.

Abstract: A display device includes an organic insulating layer, a first inorganic insulating layer, and a second inorganic insulating layer arranged in a first region and a second region, a plurality of pixels arranged in the first region, a protective film arranged in the second region and in contact with an upper surface of the second inorganic insulating layer in the second region, and a groove portion is provided in the organic insulating layer in the second region. A side surface and a bottom surface of the groove portion is covered by the first inorganic insulating layer and the second inorganic insulating layer. The protective film is overlapped with an upper surface of the organic insulating layer and an upper end portion and a part of the side surface of the groove portion.

Abstract: Provided is a light-emitting element including a first electrode, a partition wall covering an edge portion of the first electrode, a light-confining layer in contact with a side surface of the partition wall and the first electrode, an electroluminescence layer over the first electrode and in contact with the first electrode and the light-confining layer, and a second electrode over the electroluminescence layer. A refractive index of the light-confining layer is lower than a refractive index of the electroluminescence layer.

Abstract: A display device includes a substrate, a circuit element layer on the substrate, a display element layer on the circuit element layer, a sealing film on the display element layer, an oxide film on the sealing film, a barrier metal layer on the oxide film, and a wiring layer on the barrier metal layer, wherein a surface of the sealing film in contact with the oxide film has concave/convexities, and the barrier metal layer is formed by titanium nitride. A height of the concave/convexities of the surface of the sealing film may be less than 30 nm. A thickness of the oxide film may be 5 nm or less.

Abstract: Provided is a light-emitting element including a first electrode, a partition wall covering an edge portion of the first electrode, a light-confining layer in contact with a side surface of the partition wall and the first electrode, an electroluminescence layer over the first electrode and in contact with the first electrode and the light-confining layer, and a second electrode over the electroluminescence layer. A refractive index of the light-confining layer is lower than a refractive index of the electroluminescence layer.

Abstract: A wiring board of an embodiment includes a through via, a first insulating film disposed around the through via, a second insulating film disposed around the first insulating film, a third insulating film disposed around the second insulating film and a resin disposed around the third insulating film. The resin includes fillers. The second insulating film has a relative permittivity lower than a relative permittivity of the first insulating film. The third insulating film has a relative permittivity higher than a relative permittivity of the second insulating film.