Abstract: The present invention provides a fuel cell comprising: a cathode catalyst layer 2; an anode catalyst layer 3; a proton conductive membrane 6 disposed between the cathode catalyst layer 2 and the anode catalyst layer 3; a liquid fuel tank 9 for storing a liquid fuel L; a fuel vaporizing layer 10 for supplying a vaporized component of the liquid fuel to the anode catalyst layer 3; and a vaporized fuel chamber 12 formed between the fuel vaporizing layer 10 and the anode catalyst layer 3; wherein the vaporized fuel chamber 12 is provided with an internal pressure releasing mechanism 20 for discharging a generated gas including carbon dioxide gas, that is generated anode catalyst layer 3, from a side wall of the vaporized fuel chamber 12 to outside a cell body.

Abstract: A fuel cell includes a cathode catalyst layer, an anode catalyst layer, a proton-conductive membrane provided between the cathode catalyst layer and the anode catalyst layer, and a fuel transmitting layer that supplies a vaporized component of a liquid fuel to the anode catalyst layer. Water generated in the cathode catalyst layer is supplied to the anode catalyst layer via the proton-conductive membrane. The liquid fuel is one of a methanol aqueous solution having a concentration of over 50% by molar and liquid methanol.

Abstract: An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.

Abstract: Disclosed is an image pickup device capable of greatly reducing delay in drive signals supplied to field emission devices, and cross-talk and the like that originate in these drive signals. The image pickup device comprises a photoelectric conversion film for receiving incident light on one side thereof; a field emission layer having an electron emitting surface apart from and facing the other side of the photoelectric conversion film, and including a plurality of electron emission devices; and a drive layer formed on a back side of the field emission layer and including a plurality of device drive circuits for supplying drive signals to each of back electrodes of the plurality of electron emission devices.

Abstract: An electron emitting device includes an electron-supply layer made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound in an amorphous phase, an insulator layer formed on the electron-supply layer and a thin-film metal electrode formed on the insulator layer. Electrons are emitted upon application of an electric field between the electron-supply layer and the thin-film metal electrode. The insulator layer has at least one island region that constitutes an electron emitting section in which the film thickness of the insulator layer is gradually reduced. The electron emitting device further includes a carbon region made of at least of carbon, a mixture containing carbon as a main component and a carbon compound on at least one of a top, bottom and inside of the island region.

Abstract: A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.

Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer deposited over an electron source layer formed over an ohmic electrode; and a metal thin film electrode deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.

Abstract: A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.

Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer deposited over an electron source layer formed over an ohmic electrode; and a metal thin film electrode deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.

Abstract: An electron emission light-emitting device comprises an electron emission device and a fluorescent material layer formed on the thin-film metal. The electron emission device comprises an electron-supply layer made of semiconductor formed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron emission light-emitting device emits light when an electric field is applied between the electron-supply layer and the thin-film metal.

Abstract: A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.

Abstract: A display device has an emitting region constituted by a plurality of first electrodes provided on a substrate and extending in parallel, a plurality of second electrodes provided on the first electrodes and extending substantially perpendicularly to the first electrodes, and a plurality of emission sites for emitting electrons or light respectively connected to a plurality of intersections between the first and second electrodes and arranged on the substrate and has a peripheral region surrounding the emitting region on the substrate. In this display device, first and second groups of external repeating terminals for the first and second electrodes are collectively provided side by side in a part of the peripheral region.

Abstract: A speaker includes a silicone wafer 1, a thermal barrier layer 2 formed by anodizing a part of the silicone wafer 1, and an exothermic electrode 3 made of aluminum formed on the thermal barrier layer 2.

Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer has a rectifier function layer, whereby the electron emission device emits electrons when an electric field is applied between the electron-supply layer and the thin-film metal.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of a silicon wafer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device includes an electron-supply layer formed of metal or semiconductor; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer, whereby electrons are emitted when an electric field is applied between the electron-supply layer and the thin-film metal electrode. The insulator layer and the thin-film metal electrode have at least one island-like region where the thicknesses of the insulator layer and the thin-film metal electrode gradually decrease.

Abstract: An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.