Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device based flat panel display apparatus is composed of a pair of a back substrate and an optically transparent front substrate opposing to each other with a vacuum space interposed therebetween, and a plurality of electron emission devices, each of which includes an electron-supply layer made of metal or semiconductor, formed on ohmic electrodes formed on a surface of the back substrate proximate to the vacuum space, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer and facing the vacuum space. The front substrate includes collector electrodes formed on its surface proximate to the vacuum space, fluorescent material layers formed on the collector electrodes, and an image display array composed of a plurality of light emitting elements corresponding to the fluorescent material layers.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.

Abstract: An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.

Abstract: A magneto optical disc, is provided with: a record layer to which information is recorded in a perpendicular magnetization condition; a switch layer, which perpendicular magnetic anisotropy is reduced at a room temperature and is increased at a temperature close to a predetermined reproduction temperature; and a reproduction layer opposed to the record layer through the switch layer to have a switched connection with the record layer by the switch layer.

Abstract: A magneto optical recording medium is provided with: a record layer, to which information is recorded as a directional condition of magnetization thereof and which comprises a magnetic substance having a Curie temperature Tc.sub.2 ; a reproduction layer, to which the magnetization of the record layer is transferred at a predetermined reproducing temperature Tpb and which comprises a magnetic substance having a Curie temperature Tc.sub.0 ; an intermediate layer disposed between the record layer and the reproduction layer and comprising a magnetic substance having a Curie temperature Tc.sub.1 for allowing the magnetization of the record layer to be transferred therethrough at a temperature lower than the Curie temperature Tc.sub.

Abstract: A magneto optical disc is provided with: a substrate having a disc shape; and a ferrimagnetic layer formed on the substrate for recording information as a magnetization condition therein, the ferrimagnetic layer comprising material which Kerr rotation angle at a room temperature is substantially zero and which Kerr rotation angle at a predetermined reproducing temperature has a predetermined value other than zero, the predetermined reproducing temperature being higher than the room temperature and lower than a Curie point of the ferrimagnetic layer.

Abstract: An optical recording disk in which a transfer layer having grooves made of ultraviolet setting resin is laminated on the surface of a substrate, and in which a recording layer is laminated on the transfer layer, the optical recording disk comprises a peeling protrusion projectingly provided on the inner circumferential side of the transfer layer.