Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

Abstract: The current disclosure relates to methods of selectively etching material from a first surface of a substrate relative to a second surface of the substrate. The method includes providing the substrate having a first surface comprising an etchable material, and a second surface comprising a non-etchable material in a reaction chamber, providing hydrogen-containing plasma into the reaction chamber to reduce the etchable material to a predetermined depth; and providing remotely-generated reactive halogen species and hydrogen into the reaction chamber to selectively etch the reduced etchable material. The disclosure further relates to methods of selectively etching at least two different etchable materials simultaneously from a surface of a substrate relative to a non-etchable material on the same substrate, to methods of simultaneous differential etching of three or more etchable materials on a substrate, as well as to assemblies for processing semiconductor substrates.

Abstract: The present disclosure provides a composition for preventing an immune disorder, recovering from an immune disorder, preventing an immune disorder from occurring and preventing or treating a disease, disorder or condition. The present disclosure provides a composition for preventing an immune disorder, recovering from an immune disorder, preventing an immune disorder from occurring and preventing or treating a disease, disorder or condition in a subject, said composition comprising an antigen component, which is specific to the subject (or immunological memory of which remains in the subject), against a component which is different from a causative factor of the disease, disorder or condition.

Abstract: Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

Abstract: The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.

Abstract: An information recording/playback device includes a recording pulse generation unit generates a recording pulse based on a multi-value modulation data, and a data recording unit records the mark on the recording medium based on the recording pulse. The data recording unit executes recording processing of setting sizes of all of marks to be recorded on the recording medium to a size equal to or smaller than a spot size at a half level of a maximum value of a two-dimensional light intensity distribution of a beam spot, and executes data recording processing of forming recording regions in modes having different densities of recording marks according to the levels of the multi-value modulation data.

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

Abstract: In an information recording/playback device adopting multi-value recording, a configuration to limit the size of marks to be recorded on a recording medium only to a predetermined size equal to or smaller than a beam spot size to enable prevention and reduction of crosstalk and crosswrite is implemented. A recording pulse generation unit configured to generate a recording pulse based on a multi-value modulation data, and a data recording unit configured to record the mark on the recording medium on the basis of the recording pulse are included.

Abstract: An apparatus comprises a photodetector (PD) that irradiates a disk with laser light and outputs a signal based on a reflected light from the disk, a front monitor that outputs a reference signal based on an emitted light of a laser diode, and a data detection processing unit to which an output signal of the PD is input to generate a reproduction signal. The data detection processing unit includes a reproduction signal adaptive equalizer that outputs an equalization signal by adaptive equalization processing based on the PD output signal, and a laser noise adaptive equalizer that outputs the equalization signal by the adaptive equalization processing based on a laser noise signal, and generates the reproduction signal in which the laser noise is reduced on the basis of an arithmetic operation result of the output of the reproduction signal adaptive equalizer and the output of the laser noise adaptive equalizer.

Abstract: Provided are an apparatus and a method for generating a reproduction signal with reduced laser noise. There are provided a photodetector (PD) that irradiates a disk with laser light and outputs a signal based on a reflected light from the disk, a front monitor that outputs a reference signal based on an emitted light of a laser diode, and a data detection processing unit to which an output signal of the PD is input to generate a reproduction signal. The data detection processing unit includes a reproduction signal adaptive equalizer that outputs an equalization signal by adaptive equalization processing based on the PD output signal, and a laser noise adaptive equalizer that outputs the equalization signal by the adaptive equalization processing based on a laser noise signal, and generates the reproduction signal in which the laser noise is reduced on the basis of an arithmetic operation result of the output of the reproduction signal adaptive equalizer and the output of the laser noise adaptive equalizer.

Abstract: An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides.

Abstract: In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

Abstract: An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides.

Abstract: In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

Abstract: Provided are a device and a method which are capable of performing crosstalk-removed high-quality data reproduction from a high-density recording type optical disc. The device includes a photo detector that outputs a readout signal from a reproduction track of an information recording disc, an adjacent track reproduction binary signal supply unit that outputs a binary signal (binary data) which is a reproduction signal of an adjacent track of the reproduction track, a multi-input adaptive equalizer that includes an equalizer unit that receives the readout signal from the reproduction track and an adjacent track reproduction binary signal and outputs an equalization signal by an adaptive equalization process based on an input signal, and a binarization processing unit that executes a binarization process based on the equalization signal and generates a reproduction signal of the reproduction track.

Abstract: A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Abstract: Provided are a device and a method which are capable of performing crosstalk-removed high-quality data reproduction from a high-density recording type optical disc. The device includes a photo detector that outputs a readout signal from a reproduction track of an information recording disc, an adjacent track reproduction binary signal supply unit that outputs a binary signal (binary data) which is a reproduction signal of an adjacent track of the reproduction track, a multi-input adaptive equalizer that includes an equalizer unit that receives the readout signal from the reproduction track and an adjacent track reproduction binary signal and outputs an equalization signal by an adaptive equalization process based on an input signal, and a binarization processing unit that executes a binarization process based on the equalization signal and generates a reproduction signal of the reproduction track.