Patents by Inventor Nobuyoshi Sato

Nobuyoshi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11971346
    Abstract: A biological sample detection device configured to acquire color information of an object of analysis without a deterioration in color extraction accuracy caused by incorrect extraction of color of a colored label and to measure the amount of liquid and determine the type of a sample, by analyzing the biological sample housed in a biological sample tube to which a colored label is attached, and determining whether or not a colored label is present on the biological sample tube; extracting the colored label determined to be present by the colored label presence determining process; removing the colored label from the color image and extracting a detection object region in the biological sample; and analyzing to acquire color information of the detection object region and analyze the liquid amount and the type of the biological sample.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: April 30, 2024
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Mayu Sao, Nobuyoshi Shimane, Fumiyasu Sato, Tomoto Kawamura
  • Patent number: 11946443
    Abstract: A bonded body wherein functional base material is attached to object to be bonded. Functional base material and object are bonded with functional base material's end portion covered so operational effect neither lost nor adversely affected by fluid, bonded body has strong bonding property preventing functional base material peeled off due to weather. Peelability allows functional base material repair ease. Functional base material provided on object's curved surface to be bonded to along curved and/or smooth surface of object to be bonded to along smooth surface. Functional base material has peripheral side surface with peripheral distal-most end portion. Peripheral gap part provided between object to be bonded to and functional base material on inside of peripheral distal-most end portion and on side opposing to object to be bonded to. Peripheral gap part filled with holding member extending in laminar fan shape from peripheral side surface along curved and/or smooth surface.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: April 2, 2024
    Assignees: ASAHI RUBBER INC., HOKUTAKU CO., LTD.
    Inventors: Nobuyoshi Watanabe, Hideaki Sato, Masafumi Takeyama, Yukihiro Oryu
  • Patent number: 11942545
    Abstract: A semiconductor device of an embodiment includes a substrate, a first electrode, a second electrode, the first electrode provided between the substrate and the second electrode, the oxide semiconductor layer in contact with the first electrode, an oxide semiconductor layer between the first electrode and the second electrode, the oxide semiconductor layer contains Zn and at least one first element selected from In, Ga, Si, Al, and Sn; a conductive layer between the oxide semiconductor layer and the second electrode, the conductive layer in contact with the second electrode, the conductive layer contains O and at least one second element selected from the group consisting of In, Ga, Si, Al, Sn, Zn, and Ti, a gate electrode; and a gate insulating layer between the oxide semiconductor layer and the gate electrode.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: March 26, 2024
    Assignee: Kioxia Corporation
    Inventors: Yuta Sato, Tomomasa Ueda, Nobuyoshi Saito, Keiji Ikeda
  • Patent number: 11688630
    Abstract: Disclosed herein are apparatuses and methods that include a shallow trench isolation filling structure. An example method includes: etching a semiconductor substrate to form a plurality of pillars and a trench therebetween; providing rinse solution in the trench; adding a plurality of insulating particles into the rinse solution; and removing the rinse solution such that the insulating particles and an air gap remains in the trench.
    Type: Grant
    Filed: March 15, 2021
    Date of Patent: June 27, 2023
    Assignee: Micron Technology, Inc.
    Inventor: Nobuyoshi Sato
  • Publication number: 20220293454
    Abstract: Disclosed herein are apparatuses and methods that include a shallow trench isolation filling structure. An example method includes: etching a semiconductor substrate to form a plurality of pillars and a trench therebetween; providing rinse solution in the trench; adding a plurality of insulating particles into the rinse solution; and removing the rinse solution such that the insulating particles and an air gap remains in the trench.
    Type: Application
    Filed: March 15, 2021
    Publication date: September 15, 2022
    Applicant: MICRON TECHNOLOGY, INC.
    Inventor: Nobuyoshi Sato
  • Patent number: 10816896
    Abstract: A method for manufacturing an imprinting template substrate forms a protruded mesa portion by removing a part of the substrate, and forms a film containing silicon, carbon, and fluorine, on a side surface of the mesa portion. Even when the template is pressed to the resist, the resist barely adheres to the side surface of the template. Therefore, no defect that the resist having adhered to the side surface of the template falls on the wafer and then defective parts increase, occurs.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: October 27, 2020
    Assignee: Toshiba Memory Corporation
    Inventor: Nobuyoshi Sato
  • Patent number: 10359697
    Abstract: An imprinting template substrate has a protruded portion, and a protective layer on a side surface of the protruded portion, and having a contact angle higher with respect to a resist material than a contact angle of the protruded portion with respect to the resist material. Even when the template is pressed to the resist, the resist hardly adheres to the side surface of the template. An imprinting process using the present template forms a pattern on a semiconductor substrate and then a semiconductor apparatus is manufactured.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: July 23, 2019
    Assignee: Toshiba Memory Corporation
    Inventor: Nobuyoshi Sato
  • Patent number: 10249545
    Abstract: A method for processing a substrate exposes a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed, performs surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed, supplies the resist material onto the substrate to be processed after the surface processing, and transfers a template pattern to the resist material.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: April 2, 2019
    Assignee: Toshiba Memory Corporation
    Inventor: Nobuyoshi Sato
  • Publication number: 20190062905
    Abstract: A substrate processing device is described. A holding portion is disposed in a first chamber and holds a workpiece having a first region. A plate includes a film formed on a second region corresponding to the first region. The film is formed of a material different from a material forming the first region of the workpiece. The plate is arranged to shield the first region. Holes are formed along an outer periphery of the film and pass through the plate in a thickness direction.
    Type: Application
    Filed: February 22, 2018
    Publication date: February 28, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventor: Nobuyoshi SATO
  • Publication number: 20170040231
    Abstract: A method for processing a substrate exposes a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed, performs surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed, supplies the resist material onto the substrate to be processed after the surface processing, and transfers a template pattern to the resist material.
    Type: Application
    Filed: March 10, 2016
    Publication date: February 9, 2017
    Inventor: Nobuyoshi SATO
  • Publication number: 20170038677
    Abstract: A method for manufacturing an imprinting template substrate forms a protruded mesa portion by removing a part of the substrate, and forms a film containing silicon, carbon, and fluorine, on a side surface of the mesa portion. Even when the template is pressed to the resist, the resist barely adheres to the side surface of the template. Therefore, no defect that the resist having adhered to the side surface of the template falls on the wafer and then defective parts increase, occurs.
    Type: Application
    Filed: March 10, 2016
    Publication date: February 9, 2017
    Inventor: Nobuyoshi SATO
  • Publication number: 20170040161
    Abstract: An imprinting template substrate has a protruded portion, and a protective layer on a side surface of the protruded portion, and having a contact angle higher with respect to a resist material than a contact angle of the protruded portion with respect to the resist material. Even when the template is pressed to the resist, the resist hardly adheres to the side surface of the template. An imprinting process using the present template forms a pattern on a semiconductor substrate and then a semiconductor apparatus is manufactured.
    Type: Application
    Filed: March 10, 2016
    Publication date: February 9, 2017
    Inventor: Nobuyoshi SATO
  • Publication number: 20140109825
    Abstract: Equipment for crystal growth by a vertical boat method includes a crucible enclosing a raw material, an ampoule encapsulating the crucible, and a crystal growth heater provided around the ampoule to heat the raw material. The raw material is melted into a raw material melt by the crystal growth heater, and a temperature of the raw material melt is controlled such that a crystal grows in the crucible from a bottom toward a top thereof. The crucible encloses GaAs as the raw material and Si as a dopant. The ampoule includes an additional B2O3 as an additional raw material at a position separated from the raw material, and a B2O3 adding-heater to heat the additional B2O3 separately from the raw material. A temperature of the additional B2O3 is controlled by the B2O3 adding-heater during growth of the crystal such that at least a portion of the additional B2O3 is melted and supplied into the crucible.
    Type: Application
    Filed: October 16, 2013
    Publication date: April 24, 2014
    Applicant: Hitachi Metals, Ltd.
    Inventors: Hiroshi SASABE, Nobuyoshi Sato, Masatomo Shibata
  • Patent number: 8435353
    Abstract: According to one embodiment, the thin film forming apparatus includes a boat capable of holding two wafers, in each of which a cutout portion is provided in an outer peripheral edge portion, in a groove portion for holding a wafer in a state where back surfaces face each other. Moreover, the thin film forming apparatus includes a reactor that accommodates the boat and form a coating on each of surfaces of the two wafers by a vapor deposition reaction. The positions in the groove portion, at which the two wafers are held, respectively, are displaced in a direction parallel to the surfaces of the wafers.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: May 7, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Nobuyoshi Sato
  • Publication number: 20130108736
    Abstract: [Object] To provide a method for improving the quality of at least one member selected from breads, noodles, and confectioneries so that a soft texture (softness) and a moist texture (a moisture retaining property) are imparted, and the member is less susceptible to retrograding or aging even after the elapse of a certain period of time after production (retrogradation or aging is suppressed or prevented), and also to provide an agent to be used in the method.
    Type: Application
    Filed: May 12, 2011
    Publication date: May 2, 2013
    Applicant: ORIENTAL YEAST CO., LTD.
    Inventors: Eisuke Ishihara, Hisato Matsumoto, Yuichi Sasaki, Nobuyoshi Sato
  • Publication number: 20120137973
    Abstract: According to one embodiment, there is provided a substrate processing apparatus which performs a preprocess of a substrate to which a film forming process is performed by a CVD device. The substrate processing apparatus comprises a substrate process chamber, a heating unit, an oxidation process unit, and a coating process unit. In the substrate process chamber, a substrate stage is disposed. The substrate stage holds the substrate. The heating unit heats the substrate in the substrate process chamber via the substrate stage. The oxidation process unit oxidizes a surface of the substrate heated by the heating unit in the substrate process chamber. The coating process unit coats the surface of the substrate oxidized by the oxidation process unit with an organic solvent in the substrate process chamber.
    Type: Application
    Filed: September 21, 2011
    Publication date: June 7, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Nobuyoshi SATO
  • Publication number: 20110306217
    Abstract: According to one embodiment, the thin film forming apparatus includes a boat capable of holding two wafers, in each of which a cutout portion is provided in an outer peripheral edge portion, in a groove portion for holding a wafer in a state where back surfaces face each other. Moreover, the thin film forming apparatus includes a reactor that accommodates the boat and form a coating on each of surfaces of the two wafers by a vapor deposition reaction. The positions in the groove portion, at which the two wafers are held, respectively, are displaced in a direction parallel to the surfaces of the wafers.
    Type: Application
    Filed: June 10, 2011
    Publication date: December 15, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventor: Nobuyoshi SATO
  • Publication number: 20110143549
    Abstract: In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 16, 2011
    Applicants: KABUSHIKI KAISHA TOSHIBA, SHIBAURA MECHATRONICS CORPORATION, CHLORINE ENGINEERS CORP. LTD.
    Inventors: Makiko TANGE, Naoya Hayamizu, Nobuyoshi Sato, Yuri Yonekura, Hideaki Hirabayashi, Yoshiaki Kurokawa, Nobuo Kobayashi, Masaaki Kato, Hiroki Domon
  • Patent number: 7857952
    Abstract: An apparatus for treating the surface of an object to be treated comprising introducing a surface treatment fluid into a reaction vessel (4) capable of receiving an object, introducing the surface treatment fluid into a separation vessel (14) after the object is subjected to surface treatment, and circulating the surface treatment fluid, from which a contaminant has already been removed, to the reaction vessel (4). At the time of treatment on the surface of the object, a circulation passage for the surface treatment fluid including the reaction vessel (4) is communicated and the surface treatment fluid is constantly circulated through the circulation passage.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: December 28, 2010
    Assignees: Asahi Engineering Co., Ltd.
    Inventors: Hideo Yoshida, Seizo Miyata, Masato Sone, Nobuyoshi Sato
  • Patent number: 7854168
    Abstract: The invention is objected to enable the provision of an vessel steel plate measuring device capable of measuring the thickness of vessel steel plate, even in the case of a vessel having a vessel mirror part formed by a spherical or conical curved surface such as a reactor (reaction vessel) and various kinds of obstructions at a vessel barrel. The structure of the device is characterized in that a supporting point member 20 is detachably provided from a supporting point set at the central axis of the vessel mirror part 1a of a reactor 1, and a traveling carrier 6 traveling on a steel plate of the vessel mirror part 1a and having plural ultrasonic probes 7 mounted thereon is connected to one end of a turning radius regulating member 19 rotatively provided around the supporting point member 20.
    Type: Grant
    Filed: October 7, 2008
    Date of Patent: December 21, 2010
    Assignee: Asahi Kasei Engineering Corporation
    Inventors: Nobuyoshi Sato, Kazuhiro Nojiri, Hiroyuki Haga, Jiro Nakayama, Yuji Nishimura