Abstract: A method for activating the surface of a base material and an apparatus thereof, which is suited to be utilized for pretreatment in electrochemical treatment such as, for example, electroplating or the like, in which the surface of a base material such as metal can be subjected to degreasing treatment and oxide film removing treatment simultaneously, efficiently and rationally, in which productivity can be enhanced and the equipment cost can be reduced, and in which a waste solution can be rationalized so that the solution can be reutilized and the environmental pollution can be prevented.

Abstract: The present invention relates to a system for managing and diagnosing a state of a facility apparatus, and an object thereof is to provide a system for diagnosing the facility apparatus wherein, if information falling under a level of abnormality is extracted from gathered information on an operatingstateof thefacilityapparatus, anadvancedanalysis and diagnosis section on a facility diagnosis center side performs an advanced analysis and diagnosis process and promptly notifies a user side of the information on the best way of dealing with the facility apparatus determined to be abnormal, and further uploads a facility management data analysis program from the advanced analysis and diagnosis section to a facility monitoring section on the user side so that raw information of a large information amount can be analyzed on the user side without sending it to the facility diagnosis center side.

Abstract: An anti-airlock apparatus for filters comprises a process bath for processing wafers, a filtration unit incorporating a filter for preliminarily filtering a process solution before said processing and connected to a first deaeration line, and a tank body provided on the primary side or the filtration unit and connected to a second deaeration line, wherein at least said filtration unit and tank body are connected to each other via a pipeline, and a valve of the first deaeration line and a valve of the second deaeration line are separately operated and said first and second deaeration lines are directly connected to the most upstream side of the process solution.

Abstract: The present invention prevents deposition on product wafers of microbubbles generated from chemical solution circulation systems for wet etching or wet cleaning, or pure water supply systems during manufacturing processes of semiconductors or liquid crystals. A separator is provided on the inner wall of a chemical solution bath for etching or cleaning wafers to cover a process solution nozzle. The separator comprises an upper microbubble discharge tube extending upright for discharging microbubbles and lower outlets for horizontally introducing a process solution into the process bath.

Abstract: A method of removing particles adhering to a surface of a semiconductor wafer including the steps of: providing a container having a drain valve; positioning the semiconductor wafer in the container; directing a jet stream consisting of water against the surface of the semiconductor wafer; removing particles adhering to the surface of the semiconductor wafer by scrubbing the surface of the semiconductor wafer with a brush while the jet stream of water is directed against the surface of the semiconductor wafer; closing the drain valve while the jet stream of water is directed against the semiconductor wafer, wherein the water accumulates in the container to thereby completely immerse the brush and the semiconductor wafer in the water in the container; and maintaining the brush and the semiconductor wafer completely immersed in the water from the jet stream for a predetermined period of time.

Abstract: The present invention provides apparatus and a process for efficiently removing particles generated during a laser marking of the semiconductor wafer substrate, thereby improving the yield. The process of the invention for marking a semiconductor wafer substrate by a beam of laser radiation comprises the steps of flowing a gas over a marking region at a predetermined flow rate and removing the gas from the marking region at the same predetermined flow rate, thereby generating a gas flow having a predetermined flow rate over and adjacent the marking region so that particles produced from the semiconductor wafer substrate while it is being marked will be removed. In a preferred embodiment, the semiconductor wafer substrate may be mounted with its upper surface to be marked directed downwardly while the laser marking beam is directed upwardly to the substrate.

Abstract: An object of the present invention is to prevent erroneous operation of a liquid level sensor due to deposition of ammonium fluoride dissolved in buffered hydrofluoric acid used as a process solution.The present invention provides a liquid level sensor comprising a chemical solution bath for receiving a chemical solution including buffered hydrofluoric acid, a gas feed tube for introducing a gas for detecting the variation in the liquid level of said chemical solution into said chemical solution, and a gas pressure detector for detecting a change in the pressure of said gas and converting it into an electric signal to indicate a change in liquid level, characterized in that the diameter of a gas outlet provided at an end of said gas feed tube is smaller than the inner diameter of said gas feed tube.

Abstract: In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved.

Abstract: A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.

Abstract: An aqueous ink comprising at least a water-soluble dye, water, and a basic amino acid, and a method for ink-jet recording which comprises issuing droplets of the aqueous ink from an ejection orifice, and adhering the droplets onto a receiving material.

Abstract: A semiconductor device including a semi-conductor substrate having active regions formed therein, at least one metal wiring pattern formed on the semiconductor substrate, and a final insulating layer formed on the metal wiring pattern. The final insulating layer is made of a borophosphosilicate glass and a plasma CVD silicon nitride film formed on the borophosphosilicate glass film. The borophosphosilicate glass film is formed by a chemical vapor deposition by supplying a gaseous mixture of organic silane, alkoxides of boron and phosphorus and ozone into a reaction vessel under the atmospheric pressure. The thus formed borophosphosilicate glass film has excellent step coverage, so that the plasma CVD film can be formed to have a uniform thickness. Further the plasma CVD film has excellent moisture resistance and water proof properties, and thus the whole insulating layer is particularly suitable as the final passivation layer of the semiconductor device.

Abstract: A diode parallel-plate plasma CVD system has semiconductor wafers are mounted with each of the front surfaces thereof being downwardly directed. The plasma CVD system includes an insulating wafer holder and conductive upper electrodes each being adapted to cover back surface of the semiconductor wafer, thereby forming a film to reduce internal stress and improve energy efficiency.

Abstract: A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O.sub.3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 350.degree. C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 atm to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatening process after the formation of the silicon oxide film can be made simpler.

Abstract: A passenger transport installation in which a large number of people can be efficiently transported between at least two vertically-spaced places. Stations communicate with a vertical elevator passage or passages along which vehicles can move upward and downward, and the vehicles stop at the stations to allow passagers to get on and off. While passengers get on and off the vehicles at the stations, other vehicles carrying other passengers can move upward and downwardly along the elevator passage or passages.

Abstract: Disclosed is a process for producing metallic chromium from a chromium- and iron-containing ore. First, the chromium- and iron-containing ore is subjected to carbon reduction to obtain a ferro-chrome; secondly, the ferro-chrome is treated with a chlorinating agent, such as aqueous hydrochloric acid, to obtain an aqueous solution containing chromium chloride and ferrous chloride; thirdly, the ferrous ion present in the aqueous chlorinated solution is oxidized into a ferric ion; fourthly, the aqueous ferric ion-containing solution is contacted with an extractant to extract the ferric ion therefrom; fifthly, the extraction residue, i.e. an aqueous chromium chloride solution, or powdered chromium chloride obtained therefrom, is treated in an oxidizing atmosphere maintained at 500.degree.-1,400.degree. C.