Patents by Inventor Nobuyuki Endo

Nobuyuki Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10767250
    Abstract: Disclosed is, as a high-strength steel plate of API X80 grade or higher with a thickness of 38 mm or more, a thick steel plate for structural pipes or tubes that exhibits high strength in the rolling direction, excellent Charpy properties at its mid-thickness part, and high material homogeneity without addition of large amounts of alloying elements. The thick steel plate for structural pipes or tubes disclosed herein has: a specific chemical composition; a microstructure mainly composed of bainite; a tensile strength of 620 MPa or more; a Charpy absorption energy vE?20° C. at ?20° C. at the mid-thickness part of 100 J or more; a variation of Vickers hardness in a plate thickness direction ?HV10,t of 50 or less; and a variation of Vickers hardness in a plate widthwise direction ?HV10,c of 50 or less.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: September 8, 2020
    Assignee: JFE STEEL CORPORATION
    Inventors: Junji Shimamura, Nobuyuki Ishikawa, Shigeru Endo, Shusaku Ota
  • Publication number: 20200243584
    Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Junji Iwata
  • Publication number: 20200235157
    Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 23, 2020
    Inventors: Shinji Kodaira, Takehito Okabe, Mitsuhiro Yomori, Nobuyuki Endo, Tomoyuki Tezuka, Toshihiro Shoyama, Jun Iwata
  • Patent number: 10686086
    Abstract: A photoelectric conversion device comprises a semiconductor substrate including a photoelectric conversion portion, a silicon oxide film arranged above the photoelectric conversion portion, and an insulating film arranged between the photoelectric conversion portion and the silicon oxide film. An n-type first impurity region constituting part of the photoelectric conversion portion and a p-type second impurity region arranged between the insulating film and the first impurity region are provided in the semiconductor substrate. A portion of the insulating film above the second impurity region, and the second impurity region contain boron. An integrated value of a boron concentration from the surface of the semiconductor substrate to a first position where a boron concentration takes a minimal value in the second impurity region is larger than that from the surface of the semiconductor substrate to an upper surface of the silicon oxide film.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: June 16, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Nobuyuki Endo
  • Publication number: 20200185446
    Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
    Type: Application
    Filed: February 13, 2020
    Publication date: June 11, 2020
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Takeshi Ichikawa
  • Patent number: 10651231
    Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: May 12, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Junji Iwata
  • Patent number: 10644055
    Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including a photoelectric conversion portion, a metal containing portion provided on the semiconductor substrate, an interlayer insulation film arranged on the semiconductor substrate to cover the metal containing portion, a first silicon nitride layer arranged on the photoelectric conversion portion to include a portion lying between the interlayer insulation film and the semiconductor substrate, a silicon oxide film including a portion arranged between the first silicon nitride layer and the photoelectric conversion portion, and a portion arranged between the interlayer insulation film and the metal containing portion, a second silicon nitride layer arranged between the silicon oxide film and the metal containing portion.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: May 5, 2020
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shinji Kodaira, Takehito Okabe, Mitsuhiro Yomori, Nobuyuki Endo, Tomoyuki Tezuka, Toshihiro Shoyama, Jun Iwata
  • Patent number: 10615042
    Abstract: A method of manufacturing a semiconductor apparatus comprises forming a first photoresist on each of a first portion and a second portion of a member, exposing the first photoresist on the first portion using a first photomask, exposing the first photoresist on the second portion using a second photomask, forming a first resist pattern by developing the first photoresist on the first portion and the second portion, etching the first portion and the second portion using the first resist pattern as a mask, forming a second photoresist on a third portion of the member, exposing the second photoresist on the third portion using a third photomask, forming a second resist pattern by developing the second photoresist on the third portion, and etching the third portion using the second resist pattern as a mask.
    Type: Grant
    Filed: May 2, 2018
    Date of Patent: April 7, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Nobuyuki Endo
  • Patent number: 10608034
    Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: March 31, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Takeshi Ichikawa
  • Patent number: 10570477
    Abstract: High-strength steel having a specified chemical composition, wherein X (%) calculated by using equation (1): X=0.35Cr+0.9Mo+12.5Nb+8V??(1) is 0.75% or more, wherein the symbols of chemical elements in equation (1) respectively denote the contents (mass %) of the corresponding chemical elements and wherein the symbol of a chemical element which is not included is assigned a value of 0, a microstructure having a bainite phase fraction of 50% or more, a dislocation density of 1.0×1015/m2 or more after aging has been performed under the condition of a Larson-Miller parameter (LMP) of 15000, and a yield strength of 550 MPa or more before and after the aging is performed, as well as methods of manufacturing such high-strength steel, is disclosed. The high-strength steel can be used as a raw material for manufacturing large diameter steel pipe having the strength properties required for its use in steam transportation.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: February 25, 2020
    Assignee: JFE STEEL CORPORATION
    Inventors: Shusaku Ota, Junji Shimamura, Nobuyuki Ishikawa, Shigeru Endo
  • Patent number: 10514793
    Abstract: A touch sensor panel has a touch sensor portion which is provided on a substrate and includes a detection portion and a peripheral wiring portion, an antenna, a transmission line portion connected to the antenna, and a control board connected to the touch sensor portion and the transmission line portion. The transmission wiring portion has a signal wire which is provided on one surface of the substrate and connected to the antenna and two ground wires which are provided on the other surface of the substrate across a disposition region corresponding to a region, in which the signal wire is provided, and electrically connected to each other at least at an end on the antenna side.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: December 24, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Nobuyuki Tada, Akihiro Hashimoto, Yasushi Endo
  • Publication number: 20190359785
    Abstract: A prepreg includes; sizing agent-coated carbon fibers coated with a sizing agent; and a thermosetting resin composition impregnated into the sizing agent-coated carbon fibers. The sizing agent includes an aliphatic epoxy compound (A) and an aromatic compound (B) at least containing an aromatic epoxy compound (B1). The thermosetting resin composition includes a thermosetting resin (D) and a latent hardener (E), and optionally includes an additive (F) other than the thermosetting resin (D) and the latent hardener (E). The (a)/(b) ratio is within a predetermined range where (a) is the height of a component at a binding energy assigned to CHx, C—C, and C?C and (b) is the height of a component at a binding energy assigned to C—) in a C1s core spectrum of the surfaces of the sizing agent-coated carbon fibers analyzed by X-ray photoelectron spectroscopy.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Nobuyuki ARAI, Tomoko ICHIKAWA, Hiroshi TAIKO, Makoto ENDO, Masanobu KOBAYASHI, Jun MISUMI
  • Patent number: 10490582
    Abstract: A semiconductor device has a silicon layer having a photoelectric conversion portion, a transfer electrode of a transfer portion disposed on the silicon layer, the transfer portion transferring a charge of the photoelectric conversion portion, and an insulator film having a first portion located between the transfer electrode and the silicon layer and a second portion located on the photoelectric conversion portion, the first portion and the second portion of the insulator film contain nitrogen, oxygen, and silicon, and the distance between the position where the nitrogen concentration shows the largest value in the second portion and the silicon layer is larger than the distance between the position where the nitrogen concentration shows the largest value in the first portion and the silicon layer.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: November 26, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuyuki Endo, Masashi Kusukawa, Toshihiro Shoyama
  • Publication number: 20190311919
    Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.
    Type: Application
    Filed: March 22, 2019
    Publication date: October 10, 2019
    Inventors: Toru ENDO, Masayuki HAYASHI, Nobuyuki SHIBAYAMA
  • Publication number: 20190308224
    Abstract: A first SPM, prepared by mixing sulfuric acid and hydrogen peroxide water at a first mixing ratio, is supplied to a substrate. A second SPM, prepared by mixing the sulfuric acid and the hydrogen peroxide water at a second mixing ratio greater than the first mixing ratio, is supplied to the substrate after the supply of the first SPM is stopped. The first SPM expelled from the substrate flows into a drain piping. The second SPM expelled from the substrate flows into a recovery piping. SPM is prepared by mixing the hydrogen peroxide water with sulfuric acid contained in the second SPM guided by the recovery piping.
    Type: Application
    Filed: March 22, 2019
    Publication date: October 10, 2019
    Inventors: Masayuki HAYASHI, Nobuyuki SHIBAYAMA, Toru ENDO
  • Publication number: 20190295839
    Abstract: A substrate processing method includes a substrate holding step of holding a substrate by a substrate holding unit, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a rotational axis passing through a central portion of the substrate, and a flow destination switching step of switching a flow destination of a chemical liquid expelled from the substrate from a first flow space in a processing cup surrounding a periphery of the substrate holding unit to a second flow space separated from the first flow space in the processing cup in parallel with the chemical liquid supply step.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 26, 2019
    Inventors: Toru ENDO, Masayuki HAYASHI, Nobuyuki SHIBAYAMA
  • Publication number: 20190295862
    Abstract: A substrate processing method includes a substrate holding step of holding a substrate by a substrate holding unit, a chemical liquid supplying step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a rotational axis passing through a central portion of the substrate, a foreign matter detecting step of detecting foreign matter, contained in the chemical liquid expelled from the substrate, in parallel with the chemical liquid supplying step, and a flow destination switching step of switching, based on the detection of the foreign matter by the foreign matter detecting step, a flow destination of the chemical liquid expelled from the substrate from a drain piping to a recovery piping during the chemical liquid supplying step.
    Type: Application
    Filed: March 18, 2019
    Publication date: September 26, 2019
    Inventors: Toru ENDO, Masayuki HAYASHI, Nobuyuki SHIBAYAMA
  • Publication number: 20190172737
    Abstract: In equipment that supplies a processing liquid on a top surface of a substrate while holding the substrate horizontally in a chamber a generation status of fumes is determined. Specifically, an image of a predetermined imaging area in the chamber is captured. Then, the generation status of fumes in the chamber is determined based on luminance values of the captured image acquired by the capturing of an image. Accordingly, it is possible to quantitatively determine whether a generation status of fumes in a chamber is normal.
    Type: Application
    Filed: November 29, 2018
    Publication date: June 6, 2019
    Applicant: SCREEN Holdings Co., Ltd.
    Inventors: Toru ENDO, Masayuki HAYASHI, Nobuyuki SHIBAYAMA, Hideji NAOHARA, Hiroaki KAKUMA, Yuji OKITA, Tatsuya MASUI
  • Publication number: 20190131468
    Abstract: A photoelectric conversion device comprises a semiconductor substrate including a photoelectric conversion portion, a silicon oxide film arranged above the photoelectric conversion portion, and an insulating film arranged between the photoelectric conversion portion and the silicon oxide film. An n-type first impurity region constituting part of the photoelectric conversion portion and a p-type second impurity region arranged between the insulating film and the first impurity region are provided in the semiconductor substrate. A portion of the insulating film above the second impurity region, and the second impurity region contain boron. An integrated value of a boron concentration from the surface of the semiconductor substrate to a first position where a boron concentration takes a minimal value in the second impurity region is larger than that from the surface of the semiconductor substrate to an upper surface of the silicon oxide film.
    Type: Application
    Filed: October 18, 2018
    Publication date: May 2, 2019
    Inventor: Nobuyuki Endo
  • Patent number: 10263034
    Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: April 16, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Nobuyuki Endo, Tetsuya Itano, Kazuo Yamazaki, Kyouhei Watanabe, Junji Iwata