Abstract: With power-on detection circuits provided for a plurality of power supply voltages, a main power-on detection signal is maintained at the active state to reset an internal node while at least one of the power-on detection signals is active. In a multi-power semiconductor integrated circuit device, current consumption at the time of power-up is reduced.

Abstract: In a VDC circuit, a differential amplifier compares a first reference potential with an internal supply potential to generate a control signal according to a result of the comparison. A constant current source transistor receives at its gate a second reference potential supplied through a path different from that of the first reference potential to operate for controlling an operation current value of the differential amplifier. A drive transistor changes conductance between a node for outputting the internal supply potential and a supply potential according to the control signal.

Abstract: A plurality of pump modules are provided, the number of pump modules to be activated is changed depending on a mode of operation, and the number of pump modules to be activated is also adjusted with the specification of interest taken into consideration. There can be provided an internal voltage generation circuit occupying a small area and readily capable of accommodating a change in specification.

Abstract: A semiconductor integrated circuit device includes a reference voltage generating circuit that can be tuned without a circuit replacement when a process condition is varied. The reference voltage generating circuit is constituted such that two different circuit configurations having different temperature properties are switched by a first switch. In each of the circuit configurations, a switch control circuit in which tuning can be performed by switching a second switch generates a control signal based on a test mode and supplies the signal to the first switch for tuning. Thereafter, a fuse in the switch control circuit is blown off to generate a control signal, and reference voltage Vref is output.

Abstract: A semiconductor memory device includes memory elements, each maintaining memory contents within a period of time during which a refresh operation is repeated, and a refresh request circuit for making a refresh request. The semiconductor memory device includes refreshing circuits each of which, in response to a refresh request from the refresh request circuit, performs a refresh operation on a different number of memory elements at the same time, and a selecting circuit for selecting one refreshing circuit from among the refreshing circuits according to the number of memory elements included in the semiconductor memory device. The refresh request circuit can change the interval at which it makes a refresh request.

Abstract: A new method for assaying anti-Treponema pallidum antibody with improved sensitivity is provided. Anti-Tp antibody in serum is assayed by enzyme immunoanalysis utilizing the antigen-antibody reaction between G15 and/or G17 antigen, a protein available on fusion of GST to the N-terminal of a Tp membrane antigen (15 and/or 17 kDa), and anti-Tp antibody in a sample.

Abstract: A substrate for a magnetic disk having minute semi-spherical raised portions formed over the entire surface by a non-electrolytic plating process, an electrolytic plating process or plating nuclei containing palladium, gold, silver, or copper. The substrate is obtained by comprising steps of forming a Ni--P intermediate layer by Ni--P plating on an aluminum substrate, finishing the Ni--P intermediate layer, dipping the substrate in a plating solution to effect palladium plating to form a Pd plating layer and forming a Ni--P plating layer to form minute semi-spherical raised portions over an entire surface of the Pd plating layer.