Abstract: In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region.

Abstract: A semiconductor layer 102 having a drift region 132, a body region 103, and a source region 104 provided at a position next to the body region 103; an epitaxial layer 106 in contact with the body region; and a gate insulating film 107 provided on the epitaxial layer are formed on a principal surface of a semiconductor substrate 101. The epitaxial layer includes an interface epitaxial layer 106i in contact with the body region, a first epitaxial layer 106a on the interface epitaxial layer 106i, and a second epitaxial layer 106b on the first epitaxial layer 106a. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.

Abstract: In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region.

Abstract: A semiconductor device includes a first cell and a second cell. Each of the first cell and the second cell includes a first silicon carbide semiconductor layer including a first region and a second region provided in the first region, a second silicon carbide semiconductor layer provided on and in contact with the first silicon carbide semiconductor layer, a first ohmic electrode in ohmic contact with the second region, and an insulating film provided on the second silicon carbide semiconductor layer. The first cell includes a gate electrode, and the second cell includes no electrode configured to control the electric potential of the second silicon carbide semiconductor layer independently of the electric potential of the first ohmic electrode.

Abstract: A semiconductor layer 102 having a drift region 132, a body region 103, and a source region 104 provided at a position next to the body region 103; an epitaxial layer 106 in contact with the body region; and a gate insulating film 107 provided on the epitaxial layer are formed on a principal surface of a semiconductor substrate 101. The epitaxial layer includes an interface epitaxial layer 106i in contact with the body region, a first epitaxial layer 106a on the interface epitaxial layer 106i, and a second epitaxial layer 106b on the first epitaxial layer 106a. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.

Abstract: A wavelength conversion laser light source 100 has: a laser light source configured to generate fundamental wave laser light; and a wavelength conversion element 101 provided with a periodic polarization reversal structure configured to convert the fundamental wave laser light which is incident onto the periodic polarization reversal structure into different laser light in wavelength wherein the wavelength conversion element includes different polarization reversal regions in period; and a polarization reversal axis 102 of at least one of the polarization reversal regions is inclined with respect to an incident optical path of the fundamental wave laser light on the wavelength conversion element.

Abstract: A wavelength conversion laser light source, includes: a solid laser medium; a wavelength conversion element; a concave mirror on which a first reflecting surface reflecting a fundamental light wave and a second harmonic light wave is formed; and a wavelength plate on which a second reflecting surface reflecting the fundamental light wave and transmitting the second harmonic light wave is formed, wherein a laser resonator is constituted by the first reflecting surface and the second reflecting surface; the solid laser medium is arranged on a first reflecting surface side of the laser resonator, the wavelength plate is arranged on a second reflecting surface side of the laser resonator, and the wavelength conversion element is arranged between the solid laser medium and the wavelength plate; and the wavelength plate outputs the second harmonic wave, to the exterior of the laser resonator, via the second reflecting surface.

Abstract: A laser light source includes a fundamental laser generator that generates a fundamental laser light, a wavelength conversion element that is made of a ferroelectric crystal with a periodically poled structure and converts the fundamental laser light to a laser light having a different wavelength, a holding member that holds at least a part of an element surface of the wavelength conversion element that crosses a polarization direction of the periodically poled structure, and an insulation layer that is provided between the holding member and the element surface. Electric resistivity of the insulation layer is 1×108 ?·cm or higher.

Abstract: A laser light source having a semiconductor laser light source which emits a laser beam, a laser medium excited by the semiconductor laser light source to emit light, two reflectors configured to work as a resonator to confine the light emitted by the laser medium, and a holder which holds the laser medium, wherein stress is generated in the laser medium formed of a ceramic material situated in the resonator so as to control a polarization direction of the light emitted by the laser medium.

Abstract: A wavelength conversion laser light source having: a laser medium which generates a fundamental wave light; a laser resonator for causing laser oscillation of the fundamental wave light; a wavelength convertor which is provided with a wavelength converting region to convert the fundamental wave light under the laser oscillation by means of the laser resonator into converted light of a different wavelength; and an excitation laser light source for exciting the laser medium, wherein the laser resonator has at least one reflecting surface which reflects the fundamental wave, and a first reflecting element which is provided on an end surface of the wavelength convertor to reflect the fundamental wave light; the wavelength converting region is situated between the at least one reflecting surface and the first reflecting element; the wavelength convertor has a periodic first polarization reversal structure formed in the wavelength converting region, and a non-converting region formed between the first reflecting el

Abstract: A wavelength conversion laser light source includes: a fundamental light source for outputting fundamental light; a wavelength conversion element with a nonlinear optical effect for converting the fundamental light into harmonic light of a different wavelength; a first optical receiver for receiving light of a specific polarization direction contained in the fundamental light output from the fundamental light source and converting an amount of light thereof into an electrical signal; a second optical receiver for receiving the harmonic light output from the wavelength conversion element and converting an amount of light thereof into an electrical signal; a temperature holding unit for holding a temperature of the wavelength conversion element constant; a fundamental light control unit for performing first control of controlling an amount of light of the fundamental light output from the fundamental light source based on the electrical signal from the second optical receiver, and second control of controlling

Abstract: A wavelength conversion laser light source includes a fundamental wave laser light source (1) to generate a fundamental wave; a first mirror and a second mirror (4, 5), arranged so as to oppose each other; a wavelength conversion element (3) which is arranged between the first mirror and the second mirror and converts the wavelength of the fundamental wave; and a temperature control portion (8) to control the temperature of the wavelength conversion element.

Abstract: A wavelength conversion laser light source having: a laser medium which generates a fundamental wave light; a laser resonator for causing laser oscillation of the fundamental wave light; a wavelength convertor which is provided with a wavelength converting region to convert the fundamental wave light under the laser oscillation by means of the laser resonator into converted light of a different wavelength; and an excitation laser light source for exciting the laser medium, wherein the laser resonator has at least one reflecting surface which reflects the fundamental wave, and a first reflecting element which is provided on an end surface of the wavelength convertor to reflect the fundamental wave light ; the wavelength converting region is situated between the at least one reflecting surface and the first reflecting element; the wavelength convertor has a periodic first polarization reversal structure formed in the wavelength converting region, and a non-converting region formed between the first reflecting e

Abstract: A laser light source having a semiconductor laser light source which emits a laser beam, a laser medium excited by the semiconductor laser light source to emit light, two reflectors configured to work as a resonator to confine the light emitted by the laser medium, and a holder which holds the laser medium, wherein stress is generated in the laser medium formed of a ceramic material situated in the resonator so as to control a polarization direction of the light emitted by the laser medium.

Abstract: A wavelength conversion laser device includes a laser light source which emits a laser beam, two reflective surfaces which reflect therefrom a laser beam, a wavelength converter provided between the two reflective surfaces, which converts a laser beam into a wavelength-converted laser beam, and condensing optics which condense the laser beams to be injected between the two reflective surfaces, wherein at least one of the two reflective surfaces has a curvature for reflecting a laser beam to be re-injected into the wavelength converter between the two reflective surfaces repeatedly while forming multi paths of laser beams injected into the wavelength converter at different incident angles, and the condensing optics are arranged to disperse beam waists of the laser beams in the wavelength converter, which reciprocate between the two reflective surfaces.

Abstract: A wavelength conversion laser light source 100 has: a laser light source configured to generate fundamental wave laser light; and a wavelength conversion element 101 provided with a periodic polarization reversal structure configured to convert the fundamental wave laser light which is incident onto the periodic polarization reversal structure into different laser light in wavelength wherein the wavelength conversion element includes different polarization reversal regions in period; and a polarization reversal axis 102 of at least one of the polarization reversal regions is inclined with respect to an incident optical path of the fundamental wave laser light on the wavelength conversion element.

Abstract: A wavelength conversion laser is provided with a pair of fundamental wave reflecting surfaces for reflecting a fundamental wave to define a plurality of fundamental wave paths passing a wavelength conversion element at different angles, and a control unit for controlling wavelength conversion efficiencies so that the wavelength conversion efficiency on a specific one of the plurality of fundamental wave paths extending in different directions between the pair of fundamental wave reflecting surfaces is highest.

Abstract: A wavelength conversion laser device includes a laser light source which emits a laser beam, two reflective surfaces which reflect therefrom a laser beam, a wavelength converter provided between the two reflective surfaces, which converts a laser beam into a wavelength-converted laser beam, and condensing optics which condense the laser beams to be injected between the two reflective surfaces, wherein at least one of the two reflective surfaces has a curvature for reflecting a laser beam to be re-injected into the wavelength converter between the two reflective surfaces repeatedly while forming multi paths of laser beams injected into the wavelength converter at different incident angles, and the condensing optics are arranged to disperse beam waists of the laser beams in the wavelength converter, which reciprocate between the two reflective surfaces.

Abstract: A wavelength conversion laser light source includes: a fundamental light source for outputting fundamental light; a wavelength conversion element with a nonlinear optical effect for converting the fundamental light into harmonic light of a different wavelength; a first optical receiver for receiving light of a specific polarization direction contained in the fundamental light output from the fundamental light source and converting an amount of light thereof into an electrical signal; a second optical receiver for receiving the harmonic light output from the wavelength conversion element and converting an amount of light thereof into an electrical signal; a temperature holding unit for holding a temperature of the wavelength conversion element constant; a fundamental light control unit for performing first control of controlling an amount of light of the fundamental light output from the fundamental light source based on the electrical signal from the second optical receiver, and second control of controlling

Abstract: A wavelength conversion laser light source includes a fundamental wave laser light source (1) to generate a fundamental wave; a first mirror and a second mirror (4, 5), arranged so as to oppose each other; a wavelength conversion element (3) which is arranged between the first mirror and the second mirror and converts the wavelength of the fundamental wave; and a temperature control portion (8) to control the temperature of the wavelength conversion element.