Abstract: Provided is a low-cost display system with a small-sized shutter shielding an opening portion in an accommodation state. In a display system in which a display device displaying an image is located at different positions as a use position and an accommodation position, the display system includes a first shutter and a second shutter which are formed so that opening portions are wider than the display device. Here, when the display device is located at the use position, at least a part of the display device is located near the front surface of the first shutter and the second shutter and at least one of the first shutter and the second shutter is closed.

Abstract: An image processing apparatus includes a dithering unit that retains a dithering table; a gray-scale value input unit that inputs, to the dithering unit, a gray-scale value of each pixel constituting image data of a predetermined color; and a pass information input unit that inputs, to the dithering unit, pass information indicating whether printing is a first pass to perform printing on a recording medium yet to be printed or a second pass to perform reprinting on the same surface of the recording medium already subjected to printing. The dithering unit performs dithering on each pixel based on the dithering table, the gray-scale value, and the pass information.

Abstract: An apparatus for manufacturing a molten zinc coated steel sheet includes a molten zinc coating device, a temper rolling mill, an acid solution contacting device, and a cleaning device connected in tandem, wherein the acid solution contacting device and the cleaning device are separated from each other with a region therebetween and an absolute humidity controller is disposed in the region between the acid solution contacting device and the cleaning device.

Abstract: A problem with existing technologies that, when decreasing the dew point of the inside of a continuous annealing furnace by using a refiner, a decrease in the temperature of a part of the inside of the furnace cannot be prevented without supplying additional heat, is to be solved. Provided is a method for adjusting a furnace atmosphere in a continuous annealing furnace, the method including drawing a gas, which is a part of the furnace atmosphere, into a refiner 8 disposed outside the furnace and dehumidifying and deoxidizing the gas; causing the gas that has been dehumidified and deoxidized and that has exited the refiner 8 to exchange heat with a gas that is to be drawn into the refiner 8 in a heat exchanger 7 disposed outside the furnace; causing the gas to exchange heat with the furnace atmosphere in a furnace heat exchanger 11 disposed in the furnace; and reinjecting the gas into the furnace.

Abstract: A facility for continuously manufacturing a galvanized steel sheet includes a continuous annealing furnace, a snout, and a galvanization bath. The furnace is divided into a heating zone, a soaking zone, and a cooling zone. The bath is directly connected to the furnace through the snout. The facility has a dewpoint meter and a draft port and a suction port for a furnace gas that are provided in at least one of the zones, gas cyclic paths which connect the draft port and the suction port to a refiner, and a dewpoint meter and a humidification device that are provided in the snout. The gas cyclic paths are separately formed for the respective connected zones. The refiner functions so that a measured value of the dewpoint meter is equal to a target dewpoint, and the humidification device functions so that a measured value of the dewpoint meter in the snout is equal to a target dewpoint for the snout.

Abstract: An annealing and manufacturing method of hot-dip galvanized steel strips includes suppression of oxide formation of elements in the steel strips. An annealing furnace includes a heating zone, a soaking zone, and a cooling zone in which a portion of gas is introduced to decrease the gas dew point. A gas suction rate Qo1 in a portion of the cooling zone, a gas suction rate Qo2 in an upper portion and a gas feed rate Qi2 in a lower portion of the soaking zone, a gas feed rate Qi1 in a connection part between the soaking and cooling zones, an atmosphere gas supply rate Qf1 into the cooling zone and its subsequent zone, an atmosphere gas supply rate Qf2 into the soaking zone, an internal volume Vs of the soaking zone, and an average furnace temperature Ts of the soaking zone satisfy relationships including 0.3×Qf1<Qo1.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: Provided is a vertical annealing furnace, in which a heating zone and a soaking zone are communicated with each other in the upper part of the furnace, in which a part of the furnace other than the communicated parts is separated by a dividing wall, in which part of the furnace gas is suctioned into a refiner having a deoxidation device and a dehumidification device which is placed outside the furnace to decrease the dew point of the gas by removing oxygen and moisture from the gas and such that the resultant gas having a decreased dew point is returned into the furnace, in which a gas suction port into the refiner is located in the lower part of the connection part between the soaking zone and the cooling zone and in which one or more gas suction ports are located in the parts of the heating zone and/or the soaking zone outside of an area within 6 m in the vertical direction and 3 m in the longitudinal direction of the furnace from the steel strip entrance in the lower part of the heating zone.

Abstract: Provided is an electronic machine that is provided with a speaker and that enables a direction of the speaker to be appropriately and arbitrarily changed. The electronic machine includes a speaker unit, housings, and a rotating device. The speaker unit is supported by the housing. The rotating device includes a first rotating device configured to rotate the speaker unit with respect to the housings about a direction intersecting with an axis of the housings serving as a rotational axis, and a second rotating device configured to rotate the speaker unit with respect to the housings about the axis of the housings serving as a rotational axis.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: A continuous galvanizing line having an annealing furnace of an all radiant tube heating type includes a moisture removal device, dew-point meters, outlets through which the atmospheric gas in the furnace is collected and inlets through which the atmospheric gas from which moisture has been removed with the moisture removal device is fed into the furnace, the dew-point meters and the outlets being placed at least at two points which respectively exist on a side wall in the vicinity of the entrance of the annealing furnace and on a side wall in the vicinity of the furnace top or the furnace bottom at a position where a steel sheet has a maximum end-point temperature, the inlets being placed at two points which respectively exist on side walls on the sides opposite to the sides of the two points for the outlets in the height direction of the furnace, making it possible to steadily control the dew-point of the atmospheric gas to be ?45° C. or lower and ?80° C.

Abstract: An image processing apparatus includes a dithering unit that retains a dithering table; a gray-scale value input unit that inputs, to the dithering unit, a gray-scale value of each pixel constituting image data of a predetermined color; and a pass information input unit that inputs, to the dithering unit, pass information indicating whether printing is a first pass to perform printing on a recording medium yet to be printed or a second pass to perform reprinting on the same surface of the recording medium already subjected to printing. The dithering unit performs dithering on each pixel based on the dithering table, the gray-scale value, and the pass information.

Abstract: Part of an atmosphere gas in a heating zone and/or a soaking zone is sucked out and is cooled through a high-temperature gas passage of a heat exchanger by heat exchange with a gas in a low-temperature gas passage, then cooled through a gas cooler, then dehumidified to a dew point of ?45° C. or less in a dryer, then heated through the low-temperature gas passage of the heat exchanger by heat exchange with a gas in the high-temperature gas passage, and returned to the heating zone and/or the soaking zone. Part of gas flowing from the dryer toward the low-temperature gas passage of the heat exchanger is returned to a cooling zone. These can achieve a low dew point of ?45° C. or less with high energy efficiency.

Abstract: In one embodiment, a heat dissipation connector mounted on a semiconductor chip and sealed up with a molding resin along with the semiconductor chip and a lead frame includes a heat dissipation portion configured to have a block shape, and have an upper face exposed out of the molding resin. The connector further includes a connecting portion configured to extend from a first side face of the heat dissipation portion, and electrically connect an electrode arranged on the semiconductor chip to the lead frame. The heat dissipation portion and the connecting portion are integrally made of the same metal sheet.

Abstract: In one embodiment, a semiconductor device includes a lead frame including an island portion and a terminal portion separated from the island portion. The device further includes a semiconductor chip mounted on the island portion and including an electrode. The device further includes an insulating layer disposed on the semiconductor chip and having an opening to expose at least a part of the electrode. The device further includes a connector covering the electrode exposed through the opening and electrically connecting the electrode and the terminal portion.

Abstract: A resol-type para-octylphenol-formaldehyde co-condensation resin and a method for producing the same are provided, the resol-type para-octylphenol-formaldehyde co-condensation resin having a content of a para-octylphenol monomer of 1 wt. % or less, having a total content of an aliphatic hydrocarbon, a halogenated aliphatic hydrocarbon, an aromatic hydrocarbon, a halogenated aromatic hydrocarbon, and an alcohol having 1 to 8 carbon atoms of 1 wt. % or less, the aliphatic hydrocarbon, the halogenated aliphatic hydrocarbon, the aromatic hydrocarbon, the halogenated aromatic hydrocarbon, and the alcohol having a boiling point of 60° C. or more, having a softening point of 70 to 105° C., and having an acid value of 20 to 28 KOHmg/g. The resol-type para-octylphenol-formaldehyde co-condensation resin can be used as a resin cross-linking agent for a rubber.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second semiconductor region via a first insulating film; a second electrode provided below the first electrode, and contacting with the semiconductor layer via a second insulating film; an insulating layer interposed between the first electrode and the second electrode; a third electrode electrically connected to the semiconductor layer; and a fourth electrode connected to the second semiconductor region. The first electrode has a first portion and a pair of second portions. And each of the pair of second portions is provided along the first insulating film.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second semiconductor region via a first insulating film; a second electrode provided below the first electrode, and contacting with the semiconductor layer via a second insulating film; an insulating layer interposed between the first electrode and the second electrode; a third electrode electrically connected to the semiconductor layer; and a fourth electrode connected to the second semiconductor region. The first electrode has a first portion and a pair of second portions. And each of the pair of second portions is provided along the first insulating film.

Abstract: In a high speed image capturing state, a camera signal processing circuit is not needed to perform a signal process at a high screen rate, but at a regular screen rate. In the high speed image capturing mode, raw data of 240 fps received from an image sensor 101 are recorded on a recording device 111 through a conversion processing section 201 and a recording device controlling circuit 210. Raw data that have been decimated and size-converted are supplied to a camera signal processing circuit 203 through a pre-processing circuit 202 and an image being captured is displayed on a display section 112 with a signal for which a camera process has been performed.