Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.

Abstract: A substrate processing method is provided, which includes: a substrate holding step of causing a substrate holding unit to hold a substrate; an ozone-containing hydrofluoric acid solution supplying step of supplying an ozone-containing hydrofluoric acid solution containing ozone dissolved therein a hydrofluoric acid solution to one major surface of the substrate held by the substrate holding unit; a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into contact with the one major surface of the substrate after the ozone-containing hydrofluoric acid solution supplying step; and an ozone water supplying step of supplying ozone water to the one major surface of the substrate before start of the brush-cleaning step after the ozone-containing hydrofluoric acid solution supplying step or in the brush-cleaning step.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base.

Abstract: A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base.

Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A first SPM, prepared by mixing sulfuric acid and hydrogen peroxide water at a first mixing ratio, is supplied to a substrate. A second SPM, prepared by mixing the sulfuric acid and the hydrogen peroxide water at a second mixing ratio greater than the first mixing ratio, is supplied to the substrate after the supply of the first SPM is stopped. The first SPM expelled from the substrate flows into a drain piping. The second SPM expelled from the substrate flows into a recovery piping. SPM is prepared by mixing the hydrogen peroxide water with sulfuric acid contained in the second SPM guided by the recovery piping.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate by a substrate holding unit, a chemical liquid supplying step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a rotational axis passing through a central portion of the substrate, a foreign matter detecting step of detecting foreign matter, contained in the chemical liquid expelled from the substrate, in parallel with the chemical liquid supplying step, and a flow destination switching step of switching, based on the detection of the foreign matter by the foreign matter detecting step, a flow destination of the chemical liquid expelled from the substrate from a drain piping to a recovery piping during the chemical liquid supplying step.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.

Abstract: In equipment that supplies a processing liquid on a top surface of a substrate while holding the substrate horizontally in a chamber a generation status of fumes is determined. Specifically, an image of a predetermined imaging area in the chamber is captured. Then, the generation status of fumes in the chamber is determined based on luminance values of the captured image acquired by the capturing of an image. Accordingly, it is possible to quantitatively determine whether a generation status of fumes in a chamber is normal.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.

Abstract: A substrate processing method is provided, which includes: an ozone-containing hydrofluoric acid solution spouting step of spouting an ozone-containing hydrofluoric acid solution containing ozone dissolved therein from a nozzle toward one major surface of a substrate held by a substrate holding unit; and a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into abutment against the one major surface of the substrate, the brush-cleaning step being performed after the ozone-containing hydrofluoric acid solution spouting step or in parallel with the ozone-containing hydrofluoric acid solution spouting step.

Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

Abstract: A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing method includes a substrate holding step of disposing a substrate at a position surrounded by a plurality of guards which have a first guard and a second guard in a plan view and of holding the substrate horizontally, a substrate rotating step of rotating the substrate around a vertical rotation axis which passes through a central portion of the substrate, a hydrophobic agent supplying step of supplying to the upper surface of the substrate in a rotating state a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in the rotating state in order to replace the hydrophobic agent on the substrate by the low surface-tension liquid lower in surface tension than water, a first guard switching step of switching a state of the plurality of guards to a first state in which the first guard receives a liquid scattered from the substrate

Abstract: A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.

Abstract: A first SPM, prepared by mixing sulfuric acid and hydrogen peroxide water at a first mixing ratio, is supplied to a substrate. A second SPM, prepared by mixing the sulfuric acid and the hydrogen peroxide water at a second mixing ratio greater than the first mixing ratio, is supplied to the substrate after the supply of the first SPM is stopped. The first SPM expelled from the substrate flows into a drain piping. The second SPM expelled from the substrate flows into a recovery piping. SPM is prepared by mixing the hydrogen peroxide water with sulfuric acid contained in the second SPM guided by the recovery piping.