Abstract: A substrate processing method includes a substrate holding step of holding a substrate by a substrate holding unit, a chemical liquid supplying step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a rotational axis passing through a central portion of the substrate, a foreign matter detecting step of detecting foreign matter, contained in the chemical liquid expelled from the substrate, in parallel with the chemical liquid supplying step, and a flow destination switching step of switching, based on the detection of the foreign matter by the foreign matter detecting step, a flow destination of the chemical liquid expelled from the substrate from a drain piping to a recovery piping during the chemical liquid supplying step.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate by a substrate holding unit, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a rotational axis passing through a central portion of the substrate, and a flow destination switching step of switching a flow destination of a chemical liquid expelled from the substrate from a first flow space in a processing cup surrounding a periphery of the substrate holding unit to a second flow space separated from the first flow space in the processing cup in parallel with the chemical liquid supply step.

Abstract: In equipment that supplies a processing liquid on a top surface of a substrate while holding the substrate horizontally in a chamber a generation status of fumes is determined. Specifically, an image of a predetermined imaging area in the chamber is captured. Then, the generation status of fumes in the chamber is determined based on luminance values of the captured image acquired by the capturing of an image. Accordingly, it is possible to quantitatively determine whether a generation status of fumes in a chamber is normal.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing method includes a substrate holding step of disposing a substrate at a position surrounded by a plurality of guards which have a first guard and a second guard in a plan view and of holding the substrate horizontally, a substrate rotating step of rotating the substrate around a vertical rotation axis which passes through a central portion of the substrate, a hydrophobic agent supplying step of supplying to the upper surface of the substrate in a rotating state a hydrophobic agent which is a liquid for hydrophobizing the upper surface of the substrate, a low surface-tension liquid supplying step of supplying the low surface-tension liquid to the upper surface of the substrate in the rotating state in order to replace the hydrophobic agent on the substrate by the low surface-tension liquid lower in surface tension than water, a first guard switching step of switching a state of the plurality of guards to a first state in which the first guard receives a liquid scattered from the substrate

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing method is provided, which includes: an ozone-containing hydrofluoric acid solution spouting step of spouting an ozone-containing hydrofluoric acid solution containing ozone dissolved therein from a nozzle toward one major surface of a substrate held by a substrate holding unit; and a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into abutment against the one major surface of the substrate, the brush-cleaning step being performed after the ozone-containing hydrofluoric acid solution spouting step or in parallel with the ozone-containing hydrofluoric acid solution spouting step.

Abstract: A substrate processing method is provided, which includes: a substrate holding step of causing a substrate holding unit to hold a substrate; an ozone-containing hydrofluoric acid solution supplying step of supplying an ozone-containing hydrofluoric acid solution containing ozone dissolved therein a hydrofluoric acid solution to one major surface of the substrate held by the substrate holding unit; a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into contact with the one major surface of the substrate after the ozone-containing hydrofluoric acid solution supplying step; and an ozone water supplying step of supplying ozone water to the one major surface of the substrate before start of the brush-cleaning step after the ozone-containing hydrofluoric acid solution supplying step or in the brush-cleaning step.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

Abstract: It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for a substrate using a processing liquid having a reaction rate increased with a rise in temperature includes a substrate holding portion, a rotating portion for rotating the substrate held in the substrate holding portion in a substantially horizontal plane, a heating portion for injecting heating steam to a central part of a lower surface of the substrate to entirely heat the substrate, and a peripheral edge processing portion for supplying the processing liquid from above to a peripheral edge part of the substrate heated by the heating portion, thereby carrying out a chemical treatment for the peripheral edge part.

Abstract: It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for a substrate using a processing liquid having a reaction rate increased with a rise in temperature includes a substrate holding portion, a rotating portion for rotating the substrate held in the substrate holding portion in a substantially horizontal plane, a heating portion for injecting heating steam to a central part of a lower surface of the substrate to entirely heat the substrate, and a peripheral edge processing portion for supplying the processing liquid from above to a peripheral edge part of the substrate heated by the heating portion, thereby carrying out a chemical treatment for the peripheral edge part.

Abstract: A substrate processing apparatus includes: a substrate holder to hold a substrate in a horizontal posture while rotating the substrate about a vertical rotary axis passing through the center of a plane of the substrate; a guard member having a shape extending along at least part of a surface peripheral area of the substrate, the guard member being placed in a position close to the surface peripheral area of the substrate held by the substrate holder in a noncontact manner; a cup being a tubular member with an open top end, the cup being provided so as to surround the substrate held by the substrate holder and the guard member together; and a nozzle from which a processing liquid is discharged to the surface peripheral area of the substrate held by the substrate holder. The nozzle is placed on a side opposite the cup with respect to at least part of the guard member.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

Abstract: It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for a substrate using a processing liquid having a reaction rate increased with a rise in temperature includes a substrate holding portion, a rotating portion for rotating the substrate held in the substrate holding portion in a substantially horizontal plane, a heating portion for injecting heating steam to a central part of a lower surface of the substrate to entirely heat the substrate, and a peripheral edge processing portion for supplying the processing liquid from above to a peripheral edge part of the substrate heated by the heating portion, thereby carrying out a chemical treatment for the peripheral edge part.

Abstract: Provided is a substrate processing apparatus capable of supplying pure water that is stabilized with respect to the concentration of nitrogen gas. First and second nitrogen concentration meters to measure the nitrogen gas concentration of pure water are respectively disposed before and after a concentration change part that can dissolve and degas nitrogen gas by using a hollow fiber type separation membrane. In order to maintain the nitrogen gas concentration of pure water at a target concentration value, the dissolution and degassing in the concentration change part are controlled by adjusting the degree to which a first valve on a nitrogen gas supply path and a second valve on a nitrogen gas degassing path are opened, based on a concentration difference between a target concentration and both of the first and second nitrogen concentration meters.

Abstract: Provided is a substrate processing apparatus capable of supplying pure water that is stabilized with respect to the concentration of nitrogen gas. First and second nitrogen concentration meters to measure the nitrogen gas concentration of pure water are respectively disposed before and after a concentration change part that can dissolve and degas nitrogen gas by using a hollow fiber type separation membrane. In order to maintain the nitrogen gas concentration of pure water at a target concentration value, the dissolution and degassing in the concentration change part are controlled by adjusting the degree to which a first valve on a nitrogen gas supply path and a second valve on a nitrogen gas degassing path are opened, based on a concentration difference between a target concentration and both of the first and second nitrogen concentration meters.