Patents by Inventor Nobuyuki Yoshioka
Nobuyuki Yoshioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020009653Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.Type: ApplicationFiled: March 13, 2001Publication date: January 24, 2002Applicant: ULVAC COATING CORPORATION and MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Susumu Kawada, Akihiko Isao, Nobuyuki Yoshioka, Kazuyuki Maetoko
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Patent number: 6340543Abstract: A corrected irradiation region (14) to be irradiated with a laser light under given output conditions to remove an opaque extension defect (13) is set to include: {circumflex over (1)} an irradiation region (14A) containing the opaque extension defect (13) and having widths w1 and w2 and {circumflex over (2)} a pattern repaired region (14B) having the width w2 and extending in the negative direction in a first direction D1 by the absolute value of a quantity of bias offset of repairing &Dgr;w from the connection between the opaque extension defect (13) and the pattern edge (12E). The quantity of correction offset &Dgr;w is set so that the dimensional variation rate of the resist pattern transferred falls within a range permitted for the device quality. Part of the pattern edge (12E) is missing by the width |&Dgr;w| after the irradiation of laser light.Type: GrantFiled: April 25, 2000Date of Patent: January 22, 2002Assignees: Mitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering CorporationInventors: Yoshikazu Nagamura, Kazuhito Suzuki, Kunihiro Hosono, Nobuyuki Yoshioka
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Patent number: 6323560Abstract: The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.Type: GrantFiled: January 27, 2000Date of Patent: November 27, 2001Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Koichiro Narimatsu, Shigenori Yamashita, Nobuyuki Yoshioka, Shinya Soeda, Atsushi Hachisuka, Koji Taniguchi, Yuki Miyamoto, Takayuki Saito, Ayumi Minamide
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Publication number: 20010018154Abstract: A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation.Type: ApplicationFiled: March 15, 2001Publication date: August 30, 2001Applicant: Ulvac Coating CorporationInventors: Nobuyuki Yoshioka, Akihiko Isao, Susumu Kawada, Tsuneo Yamamoto, Jun Amano, Ryoichi Kobayashi
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Patent number: 6277205Abstract: To provide a photomask cleaning method which brings about a high effect of removing residual sulfuric acid or foreign objects and can remove foreign objects effectively without fluctuating the transmission or other properties of the light-shielding layer (MoSiON film) in a phase shift photomask.Type: GrantFiled: May 2, 2000Date of Patent: August 21, 2001Assignees: Mitsubishi Denki Kabushiki Kaisha, M. Watanabe Co., Ltd., Organo CorporationInventors: Yoshikazu Nagamura, Nobuyuki Yoshioka, Hozumi Usui, Koji Yamanaka
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Publication number: 20010008137Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.Type: ApplicationFiled: February 9, 2001Publication date: July 19, 2001Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Yoshikazu Nagamura, Nobuyuki Yoshioka, Koji Yamanaka, Masaki Kusuhara
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Patent number: 6228541Abstract: A uniform thin phase-shifting photomask blank can be formed by depositing a thin film on a substrate by a reactive sputtering technique while passing, at least four times, the substrate over a sputtering target. In the formation of the blank, NO gas is used as the reactive gas, a target composed of a mixture of molybdenum and silicon is used as the sputtering target and a transparent substrate is used as the thin film-forming substrate to form, on the transparent substrate, a light-transmitting film capable of transmitting light rays having an intensity, which cannot substantially contribute to the exposure. In addition, the film is formed, on the substrate, through an opening having a sufficiently enlarged length along the substrate-conveying direction so that even regions whose deposition rate of the target component is not more than 90% of the maximum level thereof also contribute to the film-formation.Type: GrantFiled: April 16, 1999Date of Patent: May 8, 2001Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Susumu Kawada, Tsuneo Yamamoto, Jun Amano, Ryoichi Kobayashi, Nobuyuki Yoshioka
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Patent number: 6209553Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.Type: GrantFiled: February 16, 2000Date of Patent: April 3, 2001Assignees: MitsubishiDenki Kabushiki Kaisha, Organo Corporation, M. Watanabe & Co., Ltd.Inventors: Yoshikazu Nagamura, Nobuyuki Yoshioka, Koji Yamanaka, Masaki Kusuhara
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Patent number: 6071376Abstract: To provide a photomask cleaning method which brings about a high effect of removing residual sulfuric acid or foreign objects and can remove foreign objects effectively without fluctuating the transmission or other properties of the light-shielding layer (MoSiON film) in a phase shift photomask.Type: GrantFiled: July 27, 1998Date of Patent: June 6, 2000Assignees: Mitsubishi Denki Kabushiki Kaisha, M. Watanabe Co., Ltd., Organo CorporationInventors: Yoshikazu Nagamura, Nobuyuki Yoshioka, Hozumi Usui, Koji Yamanaka
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Patent number: 6068952Abstract: The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.Type: GrantFiled: January 15, 1999Date of Patent: May 30, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Koichiro Narimatsu, Shigenori Yamashita, Nobuyuki Yoshioka, Shinya Soeda, Atsushi Hachisuka, Koji Taniguchi, Yuki Miyamoto, Takayuki Saito, Ayumi Minamide
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Patent number: 6048647Abstract: In accordance with a phase shift mask of attenuation type and a manufacturing method thereof, at a prescribed region of a phase shifter portion near and around a light transmitting portion, an auxiliary pattern is provided for controlling an amount of exposure light onto a portion of an exposed material corresponding to this region. Auxiliary pattern enables to cancel light intensity of a side lobe, thereby preventing generation of a region having a high light intensity (a side lobe) at the periphery of the light transmitting portion of the phase shift mask of attenuation type.Type: GrantFiled: November 7, 1997Date of Patent: April 11, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Junji Miyazaki, Akihiro Nakae, Nobuyuki Yoshioka, Hidehiko Kozawa
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Patent number: 5952128Abstract: A phase-shifting photomask blank is made by sputtering a target of molybdenum suicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.Type: GrantFiled: April 17, 1996Date of Patent: September 14, 1999Assignees: Ulvac Coating Corporation, Mitsubishi ElectricCompanyInventors: Akihiko Isao, Susumu Kawada, Yoshihiro Saito, Tsuneo Yamamoto, Atsushi Hayashi, Nobuyuki Yoshioka, Akira Chiba, Junji Miyazaki
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Patent number: 5938897Abstract: A phase-shifting photomask blank is made by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 0.59-6.47% by volume. The transparent substrate on which the nitrided-oxide film of molybdenum slicide is formed may be subjected to a heat treatment at a temperature of 200.degree. C. or more.Type: GrantFiled: June 16, 1997Date of Patent: August 17, 1999Assignees: Ulcoat (Ulvac Coating Corporation), Mitsubishi Electric CorporationInventors: Akihiko Isao, Susumu Kawada, Yoshihiro Saito, Tsuneo Yamamoto, Atsushi Hayashi, Nobuyuki Yoshioka, Akira Chiba, Junji Miyazaki
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Patent number: 5892291Abstract: The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.Type: GrantFiled: June 27, 1996Date of Patent: April 6, 1999Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Koichiro Narimatsu, Shigenori Yamashita, Nobuyuki Yoshioka, Shinya Soeda, Atsushi Hachisuka, Koji Taniguchi, Yuki Miyamoto, Takayuki Saito, Ayumi Minamide
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Patent number: 5830607Abstract: A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.Type: GrantFiled: May 27, 1997Date of Patent: November 3, 1998Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Ryoichi Kobayashi, Nobuyuki Yoshioka, Yaichiro Watakabe, Junji Miyazaki, Kouichiro Narimatsu, Shigenori Yamashita
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Patent number: 5691090Abstract: A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.Type: GrantFiled: December 20, 1996Date of Patent: November 25, 1997Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Ryoichi Kobayashi, Nobuyuki Yoshioka, Yaichiro Watakabe, Junji Miyazaki
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Patent number: 5674647Abstract: A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.Type: GrantFiled: October 24, 1995Date of Patent: October 7, 1997Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Ryoichi Kobayashi, Nobuyuki Yoshioka, Yaichiro Watakabe, Junji Miyazaki, Kouichiro Narimatsu, Shigenori Yamashita
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Patent number: 5644381Abstract: By the method of exposure using attenuation type phase shift mask, based on the phase angle of exposure light passing through second and third light transmitting portions and on hole diameters of the second and third light transmitting portions, an optimal value between first and second distances h.sub.1 and h.sub.2 can be calculated. Therefore, a resist film can be exposed at optimal focal position. As a result, even when there is a step in the material to be exposed, a desired pattern can be exposed with high precision through the same steps in every region of the material to be exposed.Type: GrantFiled: May 15, 1995Date of Patent: July 1, 1997Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Junji Miyazaki, Nobuyuki Yoshioka
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Patent number: 5629114Abstract: A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.Type: GrantFiled: June 7, 1995Date of Patent: May 13, 1997Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Ryoichi Kobayashi, Nobuyuki Yoshioka, Yaichiro Watakabe, Junji Miyazaki
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Patent number: 5605776Abstract: A phase-shifting photomask blank has a transparent substrate, a phase-shifting film deposited on the transparent substrate, the phase-shifting film including a transversely central composition which results in a reduced rate of side etching, and a patterned photoresist film masking the phase-shifting film. When the phase-shifting film is dry-etched through the patterned photoresist film into a desired circuit pattern, transversely different rates of side etching of the phase-shifting film are substantially equalized due to the reduced rate of side etching resulting from the transversely central composition. The circuit pattern includes openings defined by removal of the phase-shifting film and shifters left between the openings. The shifters have respective side surfaces free of steps and extending substantially perpendicularly from the transparent substrate.Type: GrantFiled: August 15, 1995Date of Patent: February 25, 1997Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Susumu Kawada, Atsushi Hayashi, Nobuyuki Yoshioka, Kazuyuki Maetoko