Abstract: An attenuating type phase shifting mask and semiconductor device manufactured by using the mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.

Abstract: In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.

Abstract: In implantation of ions into a wafer, in the manufacture of a semiconductor device, a desired ion beam absorber pattern having locally different thicknesses is previously formed on a major surface of the wafer. The ion beam absorber pattern absorbs an ion beam to be implanted and is formed of a thin film material with its absorbency varying depending on its thickness. Ions are implanted once on the major surface of the wafer through this ion beam absorber pattern to form desired different impurity profiles in depth of desired regions on the major surface of the wafer.

Abstract: In order to provide an X-ray absorber low in the internal stress and suitable for forming a high accurate pattern and its fabrication method, an X-ray absorber for an X-ray mask is intended to contain tungsten and nitrogen, or tungsten, titanium and nitrogen, and to have an amorphous structure.

Abstract: A process for forming an electrode assembled into a vacuum interrupter is composed of the steps of blending silver(Ag) powder and chromium(Cr) powder in a content ratio such that Ag powder forms a matrix and Cr powder being dispersed therein, the blending ratio is prefer to be determined to contain 50 to 95 wt. % of Ag powder and 5 to 50 wt. % of Cr powder, compacting the blended powder to a compacted body, sintering the body at temperatures around melting point of Ag, and regulating density of the sintered article at least 90%. Particle size of Cr to be blended may be determined less than 150 .mu.m, more preferably, less than 60 .mu.m. Sintering temperature may be determined between 800.degree. to 950.degree. C.

Abstract: A phase shift mask of the present invention includes a quartz substrate transmitting exposure light, a transmitting film having a predetermined transmittance formed on the main surface of quartz substrate, a light transmitting portion from which quartz substrate is exposed is formed in a predetermined region, and a phase shifter portion formed of a single material on light transmitting film converting the phase angle by approximately 180.degree. and having a transmittance of 3-20% with respect to the exposure light transmitted through light transmitting portion. As a result, a defect generated in the phase shifter portion can be easily detected with an ordinary defect inspection apparatus without deteriorating the phase shifter portion as a phase shift mask.

Abstract: A method for forming an electrical contact material comprises the steps of melting a mixture of Cu and Cr into a molten alloy, atomizing the molten alloy into fine particles to obtain alloyed particles. Cr particles in the alloyed powder disintegrate to less than 5 .mu.m in mean particle diameter. The alloyed powder is sintered thereafter and a mean particle diameter of chromium in the sintered article is fined in a range of 2 to 20 .mu.m. An electrical contact material is composed of a copper matrix and chromium particles having a mean particle diameter of 2 to 20 .mu.m. The chromium particles are homogeneously dispersed in the copper matrix.

Abstract: A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.

Abstract: In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180.degree.. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.

Abstract: An attenuating type phase shifting mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.

Abstract: A process for forming contact material of an electrode comprises the steps of preparing chromium of which oxygen content is substantially reduced, forming a molten mixture of the chromium and copper, atomizing the molten mixture into fine particles to obtain Cu-Cr alloyed powder, compacting Cu-Cr alloyed powder under desired pressure, and sintering the compacted alloyed powder. The oxygen content of the chromium may be reduced until less than 0.1 wt %. In a course of the process, a metal having melting point lower then copper may be blended. The metal may be blended in Cu-Cr alloyed powder, or blended in the molten mixture of copper and chromium. Alternatively, the process further includes the steps of forming a second molten mixture of copper and a metal having melting point lower than copper, atomizing the second molten mixture into fine particles to obtain alloyed powder of copper and the metal, and blending Cu-Cr alloyed powder with the alloyed powder of copper and the metal.

Abstract: A mask for X-ray lithography includes a transparent thin film (1) of SiC, an X-ray absorbing pattern (2) of Au formed on the surface of the transparent thin film (1) and a support member (3) of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing the back surface of the transparent thin film (1). A transparent conductive thin film (5) of In.sub.2 O.sub.3 is formed over the back surfaces of the exposed transparent thin film (1) and the support member (3).

Abstract: A mask for X-ray lithography includes a transparent thin film (1) formed preferably of SiC, an X-ray absorbing pattern (2) formed preferably of Au formed on the surface of the transparent thin film (1) and a support member (3) formed preferably of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing therethrough the back surface of the transparent thin film (1). A transparent conductive thin film (5), preferably of In.sub.2 O.sub.3, is formed over the back surfaces of both the exposed transparent thin film (1) and the support member (3) to facilitate relaxation electrification of the transparent thin film (1) as may happen during X-ray exposure thereof.

Abstract: A positive resist film is formed on the major surface of a semiconductor substrate, to be irradiated with X-rays through an X-ray mask. The X-ray mask is formed by a joined member of an X-ray transmittable substrate and an X-ray absorber, and the X-ray absorber has an opening section of a T shape, in order to change the amount of transmission of the X-rays in desired positions. After the irradiation with the X-rays, the positive resist film is developed to obtain a resist film having an opening section of a desired T shape. A film for providing a control electrode is formed in the opening section of the resist film and the resist film is removed, thereby to form a T-shaped control electrode on the semiconductor substrate.

Abstract: An x-ray mask for x-ray lithography has an x-ray absorber pattern which is formed from a Ti-W alloy with a Ti content of 0.5-10 weight %. A method for the manufacture of the x-ray mask comprises sequentially forming a first film, a Ti-W alloy film with a Ti content of approximately 0.5-10 weight %, and a third film on a mask substrate and coating the third film with an electron beam-sensitive resist, exposing the resist to an electron beam and then developing the exposed resist to form a resist pattern, using the resist pattern as a mask and selectively etching the third film to form a pattern, and using the pattern as a mask and selectively etching the Ti-W alloy film with a reactive gas to form an absorber pattern. The Ti-W alloy film is preferably formed by sputtering in an atmosphere of argon and nitrogen gas with a nitrogen content of approximately 30-50%, whereby nitrogen is included in the Ti-W alloy film.

Abstract: A positive resist film is formed on the major surface of a semiconductor substrate, to be irradiated with X-rays through an X-ray mask. The X-ray mask is formed by a joined member of an X-ray transmittable substrate and an X-ray absorber, and the X-ray absorber has an opening section of a T shape, in order to change the amount of transmission of the X-rays in desired positions. After the irradiation with the X-rays, the positive resist film is developed to obtain a resist film having an opening section of a desired T shape. A film for providing a control electrode is formed in the opening section of the resist film and the resist film is removed, thereby to form a T-shaped control electrode on the semiconductor substrate.

Abstract: A method for microfabrication of a pattern on a substrate in accordance with the present invention comprises steps of; forming a thin film of X-ray sensitive resist of chlorinated polymethylstyrene on the substrate, wherein the chlorinated polymethylstyrene has an average molecular weight of 400,000-700,000 and a chlorine content of 20-40 wt. % and contains fundamental monomer structure of ##STR1## where at least one of the atom sites .alpha., .beta. and .gamma. is occupied by chlorine instead of hydrogen; selectively exposing the film to Pdl.sub..alpha. radiation; developing the exposed film with ethoxyethanol and/or methoxyethanol.

Abstract: An agricultural and horticultural fungicide of low phytotoxicity comprising as an active ingredient an addition salt between a fungicidal guanidine compound and an acid having an oleophilic group with at least 9 carbon atoms in total. The acid addition salt is produced by reacting a fungicidal guanidine compound or its acid addition salt with an acid having an oleophilic group with at least 9 carbon atoms in total or its salt.

Abstract: There is provided a method of making a non-linear voltage-dependent resistor containing a ZnO element including zinc oxide as its major component by forming or coating a layer of high insulation material on the element. The layer is formed due to a vapor-solid reaction in the atmosphere of a vaporizable molecular compound containing Sb.sub.2 O.sub.3, Bi.sub.2 O.sub.4 or SiO.sub.2 at a sintering temperature. Preferably, the layer is formed due to a vapor-solid reaction in the atmosphere of a vaporization retarding compound containing ZnO, or SiO.sub.2 in addition to the vaporizable molecular compound at a sintering temperature within a sintering vessel.