Abstract: An improved method for forming a DRAM chip is disclosed. According to this method, a memory cell gate is deposited in a memory cell array area of the DRAM chip. The memory cell gate overlies a first channel area of a substrate. A peripheral gate is deposited in a peripheral area of the DRAM chip. The peripheral gate overlies a second channel area of the substrate. A first dopant is implanted with a first concentration in a first plurality of source and drain regions of the substrate lying predominantly outside the first and second channel areas of the substrate. A sidewall is then formed adjacent to the peripheral gate. Simultaneously, an insulating layer is formed over the memory cell array area of the DRAM chip. A second dopant is implanted with a second concentration in a second plurality of source and drain regions of the substrate within the peripheral area of the DRAM chip. The implant of the second dopant is blocked by the sidewall and the insulating layer.

Abstract: A self-aligned contact (122) to a substrate (12) of a semiconductor device (100) is formed using a stopping layer (110) overlying the substrate (12). The stopping layer (110) comprising a material selected from the group consisting of silicon-rich nitride, silicon-rich oxide, carbon-rich nitride, silicon carbide, boron nitride, organic spin-on-glass, graphite, diamond, carbon-rich oxide, nitrided oxide, and organic polymer. The stopping layer (110) promotes better semiconductor device (100) performance by contributing to greater selectivity with respect to an etch process used to remove an insulating layer (112) formed overlying the stopping layer (110).

Abstract: A semiconductor device (60) may comprise a semiconductor layer (12) having an outer surface (20). A plurality of gates (18) may be disposed over the outer surface (20) of the semiconductor layer (12). An isolation cover (30) may be disposed over the gates (18). An implant screen (40) may be grown on the outer surface (20) of the semiconductor layer (12) between the isolation covers (30) of the gates (18).