Patents by Inventor Norbert Krischke
Norbert Krischke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140167155Abstract: A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.Type: ApplicationFiled: December 19, 2013Publication date: June 19, 2014Applicant: Infineon Technologies Austria AGInventors: Markus Zundel, Norbert Krischke
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Publication number: 20140120673Abstract: An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.Type: ApplicationFiled: January 7, 2014Publication date: May 1, 2014Applicant: Infineon Technologies AGInventors: Thorsten Meyer, Stefan Decker, Norbert Krischke, Christoph Kadow
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Publication number: 20140048871Abstract: A semiconductor component arrangement includes a semiconductor body, a transistor structure, a further component, and at least a first electrode structure. The semiconductor body has a first side and a second side. The transistor structure is integrated in the semiconductor body, and includes a source and a drain. The further component is also integrated in the semiconductor body. The first electrode structure is disposed in at least a first trench, and includes at least one electrode. The first electrode structure electrically connects at least one of the source and the drain to the further component.Type: ApplicationFiled: July 1, 2013Publication date: February 20, 2014Inventors: Markus Zundel, Franz Hirler, Norbert Krischke
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Patent number: 8653591Abstract: A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.Type: GrantFiled: August 9, 2012Date of Patent: February 18, 2014Assignee: Infineon Technologies Austria AGInventors: Markus Zundel, Norbert Krischke
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Patent number: 8643068Abstract: An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.Type: GrantFiled: March 12, 2009Date of Patent: February 4, 2014Assignee: Infineon Technologies AGInventors: Thorsten Meyer, Stefan Decker, Norbert Krischke, Christoph Kadow
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Patent number: 8501561Abstract: Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.Type: GrantFiled: January 10, 2011Date of Patent: August 6, 2013Assignee: Infineon Technologies AGInventors: Markus Zundel, Franz Hirler, Norbert Krischke
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Publication number: 20130009252Abstract: A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Christoph Kadow, Thorsten Meyer, Norbert Krischke
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Publication number: 20120299092Abstract: A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.Type: ApplicationFiled: August 9, 2012Publication date: November 29, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Markus Zundel, Norbert Krischke
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Patent number: 8319282Abstract: A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate.Type: GrantFiled: July 9, 2010Date of Patent: November 27, 2012Assignee: Infineon Technologies Austria AGInventors: Christoph Kadow, Thorsten Meyer, Norbert Krischke
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Patent number: 8120135Abstract: A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.Type: GrantFiled: February 11, 2010Date of Patent: February 21, 2012Assignee: Infineon Technologies AGInventors: Norbert Krischke, Nicola Vannucci, Sven Lanzerstorfer, Thomas Ostermann, Mathias Racki, Markus Zundel
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Publication number: 20120007176Abstract: A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate.Type: ApplicationFiled: July 9, 2010Publication date: January 12, 2012Applicant: INFINEON TECHNOLOGIES AGInventors: Christoph KADOW, Thorsten MEYER, Norbert KRISCHKE
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Publication number: 20110278667Abstract: A semiconductor component arrangement and method for producing thereof is disclosed. One embodiment provides at least one power semiconductor component integrated in a semiconductor body and at least one logic component integrated in the semiconductor body. The logic component includes a trench extending into the semiconductor body proceeding from a first side, at least one gate electrode arranged in the trench and insulated from the semiconductor body by a gate dielectric, and at least one source zone and at least one drain zone of a first conduction type, which are formed in the semiconductor body in a manner adjacent to the gate dielectric and in a manner spaced apart from one another in a peripheral direction of the trench and between which at least one body zone of a second conduction type is arranged.Type: ApplicationFiled: July 28, 2011Publication date: November 17, 2011Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Markus Zundel, Norbert Krischke
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Publication number: 20110165755Abstract: Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.Type: ApplicationFiled: January 10, 2011Publication date: July 7, 2011Applicant: Infineon Technologies AGInventors: Markus Zundel, Franz Hirler, Norbert Krischke
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Publication number: 20110163366Abstract: Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.Type: ApplicationFiled: January 10, 2011Publication date: July 7, 2011Applicant: Infineon Technologies AGInventors: Markus Zundel, Franz Hirler, Norbert Krischke
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Publication number: 20110089528Abstract: A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.Type: ApplicationFiled: December 23, 2010Publication date: April 21, 2011Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Markus Zundel, Norbert Krischke
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Patent number: 7875560Abstract: A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into the semiconductor substrate, which elements, on thermal activation, form an insulation region together with the further elements of the semiconductor substrate. The thermal activation is effected by means of laser irradiation, during which the semiconductor substrate is briefly melted and then recrystallizes during the subsequent cooling, so that the implanted elements form the insulation region together with the further elements of the semiconductor substrate.Type: GrantFiled: March 29, 2006Date of Patent: January 25, 2011Assignee: Infineon Technologies Austria AGInventors: Markus Zundel, Norbert Krischke
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Patent number: 7868363Abstract: Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least a gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises an at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.Type: GrantFiled: March 7, 2007Date of Patent: January 11, 2011Assignee: Infineon Technologies AGInventors: Markus Zundel, Franz Hirler, Norbert Krischke
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Publication number: 20100230764Abstract: An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel.Type: ApplicationFiled: March 12, 2009Publication date: September 16, 2010Applicant: INFINEON TECHNOLOGIES AGInventors: Thorsten Meyer, Stefan Decker, Norbert Krischke, Christoph Kadow
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Publication number: 20100207206Abstract: A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.Type: ApplicationFiled: February 11, 2010Publication date: August 19, 2010Applicant: INFINEON TECHNOLOGIES AGInventors: Norbert Krischke, Nicola Vannucci, Sven Lanzerstorfer, Thomas Ostermann, Mathias Racki, Markus Zundel
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Patent number: 7737521Abstract: A power transistor is disclosed. In one embodiment, the power transistor has a cell array including a semiconductor body having a plurality of transistor cells with gate electrodes and with body and source electrode regions and at least one temperature sensing device integrated in the semiconductor body. The temperature sensing device is formed in a selected sense zone within the cell array, and the transistor cells lying in at least one zone of the cell array that is directly adjacent to the sense zone have an increased W/L ratio of their channel width (W) to their channel length (L) compared with the other transistor cells of the cell array.Type: GrantFiled: April 29, 2005Date of Patent: June 15, 2010Assignee: Infineon Technologies AGInventors: Markus Zundel, Norbert Krischke