Abstract: A lighting device (2) mitigating motion sickness experienced by an occupant in a moving vehicle having at least one light source (90) and an operating unit (60, 70, 80, 120, 130) for recording data of a vehicle movement and/or a control signal that corresponds thereto, wherein the light source (90) outputs a light pattern on the basis of the recorded data and/or of the control signal, depending on a speed, an acceleration, a change in the acceleration and/or a change in direction of the vehicle in a respective axial component in the direction of travel as well as a transverse component orthogonal thereto.

Abstract: Various embodiments may relate to a fault detection device for streetlamp lighting system. The streetlamp lighting system includes multiple load groups which are powered by a power cable. The fault detection device includes a master detection control unit and load detection control units configured for respective load groups, wherein the master detection control unit determines, according to a first fault feedback signal provided by respective load detection control unit, whether the load group corresponding to the load detection control unit is failed, while the streetlamp lighting system is in a first state, and the master detection control unit determines, according to a physical quantity detected on the power cable, whether the power cable is failed, while the streetlamp lighting system is in a second state. In addition, various embodiments further relate to a method of controlling the fault detection device.

Abstract: Various embodiments may relate to a fault detection device for streetlamp lighting system. The streetlamp lighting system includes multiple load groups which are powered by a power cable. The fault detection device includes a master detection control unit and load detection control units configured for respective load groups, wherein the master detection control unit determines, according to a first fault feedback signal provided by respective load detection control unit, whether the load group corresponding to the load detection control unit is failed, while the streetlamp lighting system is in a first state, and the master detection control unit determines, according to a physical quantity detected on the power cable, whether the power cable is failed, while the streetlamp lighting system is in a second state. In addition, various embodiments further relate to a method of controlling the fault detection device.

Abstract: An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.

Abstract: An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.

Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Abstract: An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

Abstract: A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

Abstract: An optoelectronic semiconductor chip including a radiation passage area, where a contact metallization is applied to the radiation passage area, and a first reflective layer sequence is applied to that surface of the contact metallization which is remote from the radiation passage area, and an optoelectronic component that includes such a chip.

Abstract: Described is an optoelectronic component with at least one semiconductor body having an active region for generating electromagnetic radiation, and with a housing comprising a filter element that is disposed after the active region in the emission direction, in which the filter element selectively transmits a primary radiation fraction having a predetermined primary radiation property.

Abstract: A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such an arrangement of structural units makes it possible to realize a semiconductor chip having a directional emission characteristic.

Abstract: An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED (1), and also the method for producing said laser.

Abstract: An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

Abstract: A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0?x?1 and 0?y?1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Abstract: An optoelectronic semiconductor chip (1) comprises a radiation passage area (3), a contact metallization (2a) applied to the radiation passage area (3), and a first reflective layer sequence (2b) applied to that surface of the contact metallization (2a) which is remote from the radiation passage area (3). An optoelectronic component comprising such a chip is also specified.

Abstract: The invention relates to an optoelectronic component having at least one semi-conductor body (1) that has an active area (2) for producing electromagnetic radiation and a housing (4) that has a filter element (5) which is arranged downstream from the active area (2) in the direction of radiation. The filter element (5) selectively transmits a primary radiation fraction (7) having a predetermined primary radiation property.

Abstract: The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

Abstract: A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter.

Abstract: A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0?x?1 and 0?y?1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.