Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.

Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.

Abstract: An optically pumped, radiation-emitting semiconductor device having a semiconductor body which includes at least one pump radiation source (20) and a surface-emitting quantum well structure (11), the pump radiation source (20) and the quantum well structure (11) being monolithically integrated. The pump radiation source (20) generates pump radiation (2) for optically pumping the quantum well structure (11), a recess (10) for introducing the pump radiation (2) in the quantum well structure (9) being formed in the semiconductor body between the pump radiation source (20) and the quantum well structure (11).

Abstract: A vertically emitting semiconductor laser with an external resonator, a semiconductor body (1) in which a quantum well structure (4) is located as active zone that includes quantum wells (6) and barrier layers (5) situated therebetween, and at least one pumping radiation source (9) for irradiating into the active zone at an incidence angle ?p pumping radiation (10) of wavelength ?p. The wavelength ?p and the incidence angle ?p of the pumping radiation are selected in such a way that the absorption of the pumping radiation takes place substantially inside the quantum wells. This avoids the losses during the capture of charge carriers from the barrier layers into the quantum wells that occur in the case of optically pumped semiconductor lasers where the pumping radiation is absorbed in the barrier layers.

Abstract: A radiation-emitting semiconductor with a radiation-emitting active layer having InxAlyGa1-x-yP (0?x?1, 0?y?1, 0?x+y?1) is described. The active layer is arranged between a first confinement layer and a second confinement layer. The layers can contain InxAlyGa1-x-yPuN1-u (0?x?1, 0?y?1, 0?x+y?1 and 0?u<1), BzInxAlyGa1-x-y-zPuN1-u (0?x?1, 0?y?1, 0<z?1, 0?x+y+z?1 and 0?u<1) or a II-VI semiconductor material.

Abstract: The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

Abstract: In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active layer (3) and the p-doped layer (9) and contains at least a first undoped layer (5) and a second undoped layer (6), the second undoped layer adjoining the first undoped layer (5) and succeeding the first undoped layer (5) as seen from the active layer (3), the first undoped layer (5) and the second undoped layer (6) in each case contain aluminum, the aluminum proportion being greater in the first undoped layer (5) than in the second undoped layer (6). The layer sequence (8) advantageously acts as a diffusion barrier for the dopant of the p-doped layer.

Abstract: The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

Abstract: An organic semiconductor laser, which is produced integrally with an electrically operable inorganic LED (1), and also the method for producing said laser.

Abstract: A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.

Abstract: A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter.

Abstract: A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

Abstract: A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.

Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.

Abstract: A semiconductor substrate (1) of GaAs with a semiconductor layer sequence (2) applied on top. The semiconductor layer sequence (2) contains a plurality of semiconductor layers (3, 4, 5, 6, 7) of Al1?yGayAs1?xPx with 0?x?1 and 0?y?1, the phosphorus component x in a number of the semiconductor layers respectively being greater than in a neighboring semiconductor layer lying thereunder in the direction of growth. Such a semiconductor substrate may be advantageously used as a quasi-substrate substrate (8) for growing further semiconductor layers (28) which have a smaller lattice constant than GaAs.

Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4). At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).

Abstract: In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active layer (3) and the p-doped layer (9) and contains at least a first undoped layer (5) and a second undoped layer (6), the second undoped layer adjoining the first undoped layer (5) and succeeding the first undoped layer (5) as seen from the active layer (3), the first undoped layer (5) and the second undoped layer (6) in each case contain aluminum, the aluminum proportion being greater in the first undoped layer (5) than in the second undoped layer (6). The layer sequence (8) advantageously acts as a diffusion barrier for the dopant of the p-doped layer.

Abstract: In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.