Abstract: A contact layer is used, for example, as a liner for the fabrication of electrical contacts in contact holes. The contact layer is fabricated in two steps, in a first step a first contact layer is deposited, in which only a small proportion of the particles to be sputtered is ionized. In a second sputtering step, a second contact layer is sputtered, in the course of whose fabrication a larger proportion of the particles to be sputtered is ionized. The procedure ensures that the first contact layer is disposed as a protective layer on the substrate by gentle sputtering before the second contact layer is sputtered.

Abstract: The invention relates to a process and a device for metallization of semiconductor structures, with which areas of the surface can be connected to be electrically conductive using strip conductors in one or a plurality of planes, and contacts between the strip conductors of different planes. The process for producing metallic coatings on semiconductor structures by depositing from a vapor phase under vacuum, in trenches produced for the strip conductors and holes for strip conductor connection in the substrate material such as SiO2 or other inorganic and organic materials is characterized in that a known per se pulsed vacuum-arc evaporator is used, a barrier layer being deposited on the surface of the trenches and holes of the substrates using the plasma of the evaporator and/or the trenches and holes being filled with low-impedance strip conductor material from a further plasma of said type of evaporator.