Abstract: In radio networks having a plurality of access points, for example WiFi, a wireless audio end device like for example a microphone or headphones is connected to an access point, to which it sends its audio data or from which it receives same. Audio transmission should occur as far as possible in interruption-free manner and with low latency. If the audio end device is moved the connection quality in relation to the previous access point can decrease and require scanning or roaming. In that respect first another base station is sought and then the radio connection is redirected there. In order in that case to avoid disruptive signal interruptions portions of the audio signal which can be particularly well predicted are detected or predicted by means of short-term statistical methods, like for example speech pauses. Scanning and roaming are then carried out during the predicted portions, whereby interruptions which are perceptible to a user are avoided.

Abstract: There is set forth a method and a system for recording and synchronizing audio and video signals. The audio signal and the video signal are stored together with time stamps from a respective associated system clock. The invention relates to an adaptation of the duration of the recorded audio sequence to the duration of an associated video sequence in order to level out differences in synchronization of the two system clocks. Alignment of the two system clocks is also introduced, which is based on a data transfer which has variable waiting times for the access to a transmission channel. This thus permits clock alignment with means as are available for example on a smartphone.

Abstract: A semiconductor wafer of monocrystalline silicon. The semiconductor wafer having: a substrate wafer of monocrystalline silicon; and a layer of monocrystalline silicon that lies on a front side of the substrate wafer. The substrate wafer has a crystal orientation. An averaged front side-based ZDD of the semiconductor wafer, with a division of a surface of an epitaxial layer into 16 sectors and an edge exclusion of 1 mm, is not less than ?30 nm/mm2 and not more than 0 nm/mm2. An ESFQRmax of the semiconductor wafer, with an edge exclusion of 1 mm and 72 sectors each with a length of 30 mm, is at most 10 nm.

Abstract: A semiconductor wafer of monocrystalline silicon. The semiconductor wafer having: a substrate wafer of monocrystalline silicon; and a layer of monocrystalline silicon that lies on a front side of the substrate wafer. The substrate wafer has a crystal orientation. An averaged front side-based ZDD of the semiconductor wafer, with a division of a surface of an epitaxial layer into 16 sectors and an edge exclusion of 1 mm, is not less than ?30 nm/mm2 and not more than 0 nm/mm2. An ESFQRmax of the semiconductor wafer, with an edge exclusion of 1 mm and 72 sectors each with a length of 30 mm, is at most 10 nm.

Abstract: In radio networks having a plurality of access points, for example WiFi, a wireless audio end device like for example a microphone or headphones is connected to an access point, to which it sends its audio data or from which it receives same. Audio transmission should occur as far as possible in interruption-free manner and with low latency. If the audio end device is moved the connection quality in relation to the previous access point can decrease and require scanning or roaming. In that respect first another base station is sought and then the radio connection is redirected there. In order in that case to avoid disruptive signal interruptions portions of the audio signal which can be particularly well predicted are detected or predicted by means of short-term statistical methods, like for example speech pauses. Scanning and roaming are then carried out during the predicted portions, whereby interruptions which are perceptible to a user are avoided.

Abstract: There is set forth a method and a system for recording and synchronizing audio and video signals. The audio signal and the video signal are stored together with time stamps from a respective associated system clock. The invention relates to an adaptation of the duration of the recorded audio sequence to the duration of an associated video sequence in order to level out differences in synchronization of the two system clocks. Alignment of the two system clocks is also introduced, which is based on a data transfer which has variable waiting times for the access to a transmission channel. This thus permits clock alignment with means as are available for example on a smartphone.

Abstract: A method for transmission and low-latency real-time output and/or processing of an audio data stream that is transmitted from at least one transmitter to at least one receiver over a jittering transmission path. The method includes a calibration for determining a distribution of latencies in transmission of packets of the audio data stream, whereby a group of packets of the audio data stream is used as calibration packets and wherein a reference time grid and an offset of a fastest calibration packet are determined. Then, a shift of an output time grid for audio output and/or processing, based on the reference time grid and the determined offset of the fastest calibration packet, and the audio packets of the audio data stream are provided according to the output time grid for audio output and/or processing.

Abstract: A method for wirelessly transmitting audio signals based on the Bluetooth protocol from a Bluetooth audio source to a computer device (audio sink). An audio signal is converted in the Bluetooth audio source into an audio data packet. The audio data packets are converted into L2CAP data packets in the Bluetooth audio source based on a protocol with access to the L2CAP layer, and wirelessly transmitted. The Bluetooth audio source suppresses renewed transmission of L2CAP data packets which were erroneous or which were not received by the sink. Real-time transmission or reproduction of the audio stream or the audio signal can thus be effected. The audio stream or an audio signal on the L2CAP layer may be transmitted with a reduced repetition rate in respect of erroneous data packets. Access to RFCOMM or another data transport protocol with access to the L2CAP layer can be provided from the application layer.

Abstract: A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers containing an AlN nucleation layer covering the top surface of the silicon single crystal substrate, wherein the top surface of the silicon single crystal substrate has a crystal lattice orientation which is off-oriented with respect to the {111}-plane, the normal to the top surface being inclined with respect to the <111>-direction toward the <11-2>-direction by an angle ? of not less than 0.3° and not more than 6°, the azimuthal tolerance of the inclination being ±0.1°; and an AlGaN buffer layer which covers the AlN nucleation layer and contains one or more AlxGa1-xN layers, wherein 0<×<1.

Abstract: A method for transmission and low-latency real-time output and/or processing of an audio data stream that is transmitted from at least one transmitter to at least one receiver over a jittering transmission path. The method includes a calibration for determining a distribution of latencies in transmission of packets of the audio data stream, whereby a group of packets of the audio data stream is used as calibration packets and wherein a reference time grid and an offset of a fastest calibration packet are determined. Then, a shift of an output time grid for audio output and/or processing, based on the reference time grid and the determined offset of the fastest calibration packet, and the audio packets of the audio data stream are provided according to the output time grid for audio output and/or processing.

Abstract: A method for wirelessly transmitting audio signals based on the Bluetooth protocol from a Bluetooth audio source to a computer device (audio sink). An audio signal is converted in the Bluetooth audio source into an audio data packet. The audio data packets are converted into L2CAP data packets in the Bluetooth audio source based on a protocol with access to the L2CAP layer, and wirelessly transmitted. The Bluetooth audio source suppresses renewed transmission of L2CAP data packets which were erroneous or which were not received by the sink. Real-time transmission or reproduction of the audio stream or the audio signal can thus be effected. The audio stream or an audio signal on the L2CAP layer may be transmitted with a reduced repetition rate in respect of erroneous data packets. Access to RFCOMM or another data transport protocol with access to the L2CAP layer can be provided from the application layer.

Abstract: An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×1016 atoms/cm3 or more and 1×1020 atoms/cm3 or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

Abstract: A semiconductor wafer has a silicon single crystal substrate having a top surface and a stack of layers covering the top surface, the stack of layers containing an AlN nucleation layer covering the top surface of the silicon single crystal substrate, wherein the top surface of the silicon single crystal substrate has a crystal lattice orientation which is off-oriented with respect to the {111}-plane, the normal to the top surface being inclined with respect to the <111>-direction toward the <11-2>-direction by an angle ? of not less than 0.3° and not more than 6°, the azimuthal tolerance of the inclination being ±0.1°; and an AlGaN buffer layer which covers the AlN nucleation layer and contains one or more AlxGa1-xN layers, wherein 0<x<1.

Abstract: Semiconductor wafers composed of silicon with an epitaxially deposited layer, are prepared by: placing a dummy wafer on a susceptor of an epitaxy reactor; conducting an etching gas through the epitaxy reactor in order to remove residues on surfaces in the epitaxy reactor through the action of the etching gas; conducting a first deposition gas through the epitaxy reactor in order to deposit silicon on surfaces in the epitaxy reactor; replacing the dummy wafer by a substrate wafer composed of silicon; and conducting a second deposition gas through the epitaxy reactor in order to deposit an epitaxial layer on the substrate wafer.

Abstract: An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×1016 atoms/cm3 or more and 1×1020 atoms/cm3 or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

Abstract: Generally described, one or more embodiments of the present disclosure are directed to switch assemblies and methods for switching from one state to another. In some examples, a switch assembly may switch from one electrical contact to another electrical contact by moving a conductive spring or member from a first conductive contact on a printed circuit board (PCB) to a second conductive contact on the PCB. For instance, in one embodiment, a conductive member moves within a slot in the PCB. In another embodiment, a compression force applied to a conductive spring is reduced while the conductive spring moves from a first conductive contact to a second conductive contact.

Abstract: A susceptor for supporting a semiconductor wafer during deposition of a layer on a front side of the semiconductor wafer, the semiconductor wafer having a diameter D and, at its edge, a notch having a depth T, comprising: a ring-shaped placement area having an internal diameter d for the placement of the semiconductor wafer in the edge region of a rear side of the semiconductor wafer, wherein, with the semiconductor wafer having been placed, the relationship (D?d)/2<T is satisfied; and a protrusion of the area for the placement of semiconductor wafer in the region of the notch of the semiconductor wafer extending the placement area inward, and which completely underlays the notch of the semiconductor wafer.

Abstract: Generally described, one or more embodiments of the present disclosure are directed to switch assemblies and methods for switching from one state to another. In some examples, a switch assembly may switch from one electrical contact to another electrical contact by moving a conductive spring or member from a first conductive contact on a printed circuit board (PCB) to a second conductive contact on the PCB. For instance, in one embodiment, a conductive member moves within a slot in the PCB. In another embodiment, a compression force applied to a conductive spring is reduced while the conductive spring moves from a first conductive contact to a second conductive contact.

Abstract: Semiconductor wafers composed of silicon with an epitaxially deposited layer, are prepared by: placing a dummy wafer on a susceptor of an epitaxy reactor; conducting an etching gas through the epitaxy reactor in order to remove residues on surfaces in the epitaxy reactor through the action of the etching gas; conducting a first deposition gas through the epitaxy reactor in order to deposit silicon on surfaces in the epitaxy reactor; replacing the dummy wafer by a substrate wafer composed of silicon; and conducting a second deposition gas through the epitaxy reactor in order to deposit an epitaxial layer on the substrate wafer.

Abstract: A multiplicity of silicon wafers polished at least on their front sides are provided and successively coated individually in an epitaxy reactor by a procedure whereby one of the wafers is placed on a susceptor in the epitaxy reactor, is pretreated under a hydrogen atmosphere at a first hydrogen flow rate, and with addition of an etching medium to the hydrogen atmosphere at a reduced hydrogen flow rate in a second step, is subsequently coated epitaxially on its polished front side, and removed from the reactor. An etching treatment of the susceptor follows a specific number of epitaxial coatings. Silicon wafers produced thereby have a global flatness value GBIR of 0.07-0.3 ?m relative to an edge exclusion of 2 mm.