Abstract: Proposed is a light source comprising first and second LED light sources. Each of the first and second LED light sources have: a semiconductor diode structure adapted to generate light; and a light output section above the semiconductor diode structure adapted to output light from the semiconductor diode structure in a light output direction, the area of the light output section being less than the area of the semiconductor diode structure. The second LED light source is arranged above and at least partially overlapping the first LED light source with non-aligned light output sections with respect to the light output direction.

Abstract: Proposed is a light source comprising: a plurality of LED light sources, each of the plurality of LED light sources having: a semiconductor diode structure adapted to generate light; and a light output section above the semiconductor diode structure adapted to output light from the semiconductor diode structure, the area of the light output section being less than the area of the semiconductor diode structure; and an optically transmissive structure overlapping the light output sections of the plurality of LED light sources so as to receive light from the light output sections of the plurality of LED light sources and having a light exit section adapted to output the received light. The area of the light exit section of the optically transmissive structure is less than the footprint area of the plurality of LED light sources.

Abstract: A light emitting device such as luminaire includes one or more light emitting device chips mounted on a board. The light emitting device chips have electrical contacts and are flip chip mounted to board with the electrical contacts connected to contact pads. Sidewall metallisations on the sidewalls of the light emitting device chips are connected by metal heat transfer elements to heat dissipation regions of board. The metal heat transfer elements may be of solder which may be deposited using equipment conventionally used for attaching surface mount devices.

Abstract: A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer (50) over the guard layer (36) of the metallization. During subsequent processing delamination and/or cracking may occur at the edges of the devices, sometimes referred to as die edge defects. To address these defects a plurality of stress-relief elements (62, 64) and/or anchor elements may be provided in an edge region of the metallization and/or dielectric layer for reducing delamination. The stress-relief elements (62, 64) are formed by regions of reduced thickness or increased thickness in the guard layer (36).

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.

Abstract: A lighting device (30) and a method of manufacturing such a lighting device are provided. The lighting device comprises a sheet assembly (7), which comprises a substrate (1) being at least partly light transmissive, a plurality of light sources (5) coupled to the substrate. At least a portion of the sheet assembly (7) is fixed in a rolled-up arrangement so as to form a roll (12), whereby the light sources (5) in the portion of the sheet assembly (7) are arranged to emit light at least partly inwards in the roll and/or at least partly towards at least one end (31) of the roll. The present invention is advantageous in that it provides enhanced lumen density output, which makes the lighting device useful for high brightness applications, such as head lights and fluid purification.

Abstract: A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer (50) over the guard layer (36) of the metallization. During subsequent processing delamination and/or cracking may occur at the edges of the devices, sometimes referred to as die edge defects. To address these defects a plurality of stress-relief elements (62, 64) and/or anchor elements may be provided in an edge region of the metallization and/or dielectric layer for reducing delamination. The stress-relief elements (62, 64) are formed by regions of reduced thickness or increased thickness in the guard layer (36).

Abstract: A light emitting arrangement is suggested for generating directional projections of light with sharply defined beam profile. Light from a top-emitting solid state light source (12), having reflective side-coating (34), is pre-collimated via a beam-shaping optic (16), before being propagated through a secondary collimating funnel (18), capturing any light rays with still too great an escape angle. Chip-scale package dimensions may be achieved through the use of a thin-film side-coating and undersized phosphor layers. Substrate level process flow further allows for parallel processing of a plurality of devices.

Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Abstract: There is proposed a light source comprising: a semiconductor diode structure adapted to generate light; and an optical enhancement section above the semiconductor diode structure and adapted to output light from the semiconductor diode structure. A partially-reflective layer covers at least a portion of the top of the optical enhancement section and is adapted to reflect a portion of the output light towards the optical enhancement section. The partially-reflective layer has a light transmittance characteristic that varies laterally.

Abstract: Proposed is a light source comprising: first and second semiconductor diode structures adapted to generate light, the first and second semiconductor diode structures being laterally adjacent to each other; a light output section at least partially overlapping both of the first and second semiconductor diode structures and adapted to output light from the first and second semiconductor diode structures; and a light reflecting structure at least partially enclosing side surfaces of the first and second semiconductor diode structures and the light output section and adapted to reflect light from the semiconductor diode structures towards the light output section. The area of the light output section is less than the combined area of the first and second semiconductor diode structures.

Abstract: Proposed is a light source comprising first and second LED light sources. Each of the first and second LED light sources have: a semiconductor diode structure adapted to generate light; and a light output section above the semiconductor diode structure adapted to output light from the semiconductor diode structure in a light output direction, the area of the light output section being less than the area of the semiconductor diode structure. The second LED light source is arranged above and at least partially overlapping the first LED light source with non-aligned light output sections with respect to the light output direction.

Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Abstract: A LED package (10) for use in a lamp as well as a method for manufacturing such kind of a LED package (10) are provided, wherein the LED package (10) comprises at least one LED (16), an optical element (18) for guiding light emitted by the LED (16), a cover (26) for covering at least partially electrical components (20, 22, 24) connectable to the LED (16) and at least one optical detectable reference mark (32; 36), wherein the optical element (18) comprises at least one first optical detectable mark (30) and the cover (26) comprises at least one second optical detectable mark (34), whereby the optical element (18) and the cover (26) are arranged and aligned both with respect to the same reference mark (32; 36) by means of the first mark (30) and the second mark (34). Due to the same reference (32; 36) for both the optical element (18) and the cover (26) manufacturing tolerances are not added to each other so that the accuracy of a correct arrangement is increased.

Abstract: A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer (50) over the guard layer (36) of the metallization. During subsequent processing delamination and/or cracking may occur at the edges of the devices, sometimes referred to as die edge defects. To address these defects a plurality of stress-relief elements (62, 64) and/or anchor elements may be provided in an edge region of the metallization and/or dielectric layer for reducing delamination. The stress-relief elements (62, 64) are formed by regions of reduced thickness or increased thickness in the guard layer (36).

Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.

Abstract: An LED package including a collimator body adapted to collect and/or reflect and/or focus light. An upper plane provided by the collimator body defines a mainly horizontal plane. At least one reflection surface is provided by the collimator body and is at least partially angled to the horizontal plane. The collimator body includes a recess for receiving a lighting element including a light emitting front face such that the reflection surface extends at least partially below the level of the front face in an assembled state. Due to the angle of the reflection surface with respect to the horizontal plane of the collimator body, a small light source and a high luminous flux at the same time are provided so that the luminance and the brightness of the LED package are increased.

Abstract: A lighting device (30) and a method of manufacturing such a lighting device are provided. The lighting device comprises a sheet assembly (7), which comprises a substrate (1) being at least partly light transmissive, a plurality of light sources (5) coupled to the substrate. At least a portion of the sheet assembly (7) is fixed in a rolled-up arrangement so as to form a roll (12), whereby the light sources (5) in the portion of the sheet assembly (7) are arranged to emit light at least partly inwards in the roll and/or at least partly towards at least one end (31) of the roll. The present invention is advantageous in that it provides enhanced lumen density output, which makes the lighting device useful for high brightness applications, such as head lights and fluid purification.

Abstract: A lighting assembly, a mounting element and a manufacturing method are described. The lighting assembly includes an LED assembly 20 comprising an LED lighting element 14 provided on a carrier part 12. In order to mount an optical element 50 for forming an emission beam from light emitted from the LED lighting elements 14 a mounting element 30 is provided. The optical element 50 is mounted on the LED assembly 20 by this mounting element 30, which includes mount structure 32, clamps 44 for fixing the optical element 50, a positioning element 34 for positioning on the LED assembly 30 and an alignment part 40. The alignment part 40 comprises a flexible portion 36 and a first fixing part 46. The mount structure 32 comprises a second fixing part 48 movable relative to the first fixing part 46, which is arranged next to the first fixing part 46. The positioning element 34 is positioned on the LED assembly 20. A predetermined alignment may be achieved by fixing the first fixing part 46 to the second fixing part 48.