Abstract: A radiation sensor device is disclosed for use with a radiation source, capable of emitting radiation with photon energies larger than the work function of the target comprising a target plate to be impacted by the radiation to generate photo-electrons, the target plate being electrically isolated from a shielding electrode. The shielding electrode is arranged to collect energy-filtered photo-electrons from the target plate, using an electrostatic barrier for the filtering. The target plate is constructed of a carbon material. A current measurement device is operative to keep the target plate at a preset voltage difference with respect to the shielding electrode and measure a photo-electron deficit current as a result of radiation impact on the target plate.

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Abstract: A radiation sensor device is disclosed for use with a radiation source, capable of emitting radiation with photon energies larger than the work function of the target comprising a target plate to be impacted by the radiation to generate photo-electrons, the target plate being electrically isolated from a shielding electrode. The shielding electrode is arranged to collect energy-filtered photo-electrons from the target plate, using an electrostatic barrier for the filtering. The target plate is constructed of a carbon material. A current measurement device is operative to keep the target plate at a preset voltage difference with respect to the shielding electrode and measure a photo-electron deficit current as a result of radiation impact on the target plate.

Abstract: The invention relates to a plasma generator (1) for cleaning an object. The plasma generator (1) comprises a plasma chamber (2) and a support structure (6) arranged in the plasma chamber for supporting the object (7) to be cleaned. Further, the plasma generator comprises an electromagnetic shield (5a, 5b, 5c) counteracting a flow of charged plasma particles flowing from a plasma generating region towards the object, and a plasma source (8). In addition, the plasma generator comprises an additional plasma source (9,10) to form a composition of plasma sources that are arranged to generate in the plasma generating region plasmas, respectively, that mutually interact during operation of the plasma generator so as to force plasma particles to flow in a diffusely closed flow path.

Abstract: The invention relates to a vacuum surface cleaning device comprising a gas generation unit, a gas handling unit a plasma generation unit and a sample cleaning unit, wherein the gas generation unit is adapted to generate at least hydrogen and oxygen gases and to supply the said gases into the gas handling unit, wherein the gas handling unit is adapted to retrieve hydrogen and oxygen separately from a gas mixture provided by the gas generation unit, wherein the gas handling unit being further arranged to provide the retrieved gas into the plasma generation unit, wherein the plasma generation unit being adapted to generate a low energetic plasma from the said retrieved gas and to supply radicals and/or ions in the sample cleaning unit and wherein the sample cleaning unit being adapted to expose a sample to the said radicals and/or ions. The invention further relates to a method of cleaning a surface.

Abstract: The invention relates to anion gauge for determining a total integrated concentration of a substance having a molecular weight falling into a pre-determined range of molecular weights in a gas sample. The anion gauge includes an ionization region in a vicinity of the ionization source; an accelerator for generating a flow of ionized molecules; a mass filter for intercepting the flow for separating ions having the molecular weight falling into the pre-determined range from the ionized molecules and a detector for generating a signal representative of the total integrated concentration of such ions present in the gas sample. The invention further relates to a lithographic apparatus and a method for determining a total integrated concentration of a substance having a molecular weight falling into a pre-determined range of molecular weights in a gas sample.

Abstract: The invention relates to a method of cleaning and/or sterilization of an object provided in a hermetically sealed enclosure, providing a pressure difference between an internal volume of the enclosure and surroundings and generating a plasma solely inside the enclosure for said cleaning and/or sterilization of the object. The invention further relates to an apparatus for enabling the same. The apparatus 10 comprises a vacuum chamber 1, which can be evacuated using a vacuum pump 2, and a source 3 arranged to generate plasma of a suitable gas in an enclosure 8, which is substantially hermetically closed with respect to the atmosphere of the vacuum chamber. The enclosure 8 may be of a flexible type or may be manufactured from a rigid material. In case when the enclosure is rigid the pressure inside the enclosure may be lower than an outside pressure.

Abstract: The invention relates to a method of manufacturing a support structure for supporting an article in a lithographic process, comprising: providing a substrate having an electrically conductive top layer provided on an insulator; patterning the conductive top layer to provide a patterned electrode structure; and oxidizing the conductive top layer, so as to provide a buried electrode structure having an insulating top surface. In this way a simple buried structure can be provided as electrode structure to conveniently provide an electrostatic clamp. The invention additionally relates to a correspondingly manufactured support structure for supporting an article in a lithographic process.

Abstract: A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H2-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.

Abstract: The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Abstract: The invention relates to a method of cleaning and/or sterilization of an object provided in a hermetically sealed enclosure, providing a pressure difference between an internal volume of the enclosure and surroundings and generating a plasma solely inside the enclosure for said cleaning and/or sterilization of the object. The invention further relates to an apparatus for enabling the same. The apparatus 10 comprises a vacuum chamber 1, which can be evacuated using a vacuum pump 2, and a source 3 arranged to generate plasma of a suitable gas in an enclosure 8, which is substantially hermetically closed with respect to the atmosphere of the vacuum chamber. The enclosure 8 may be of a flexible type or may be manufactured from a rigid material. In case when the enclosure is rigid the pressure inside the enclosure may be lower than an outside pressure.

Abstract: A gas analyzing system is disclosed, the system including a gas analyzer and a reduced pressure chamber in which interior the gas analyzer is arranged, the reduced pressure chamber having an inlet configuration for a gas mixture inflow and an outlet configuration for a gas mixture outflow, wherein the outlet configuration during operation is connected to a pump system to facilitate the gas mixture outflow, the outlet configuration having a channel section and a flow section, the flow section having a cross-sectional area that is smaller than the cross -sectional area of the channel section.

Abstract: An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Abstract: The invention relates to anion gauge10 for determining a total integrated concentration of a substance having a molecular weight falling into a pre-determined range of molecular weights in a gas sample, comprising an ionization region in a vicinity of the ionization source 1; an accelerator 2, 3, 4 for generating a flow of said ionized molecules I; a mass filter 8 for intercepting said flow for separating ions having the molecular weight falling into said range from said ionized molecules and a detector 7 for generating a signal representative of the total integrated concentration of such ions present in the gas sample. The invention further relates to a lithographic apparatus and a method for determining a total integrated concentration of a substance having a molecular weight falling into a pre-determined range of molecular weights in a gas sample.

Abstract: A lithographic apparatus includes a magnet being contained in a protective enclosure, the protective enclosure being arranged to protect the magnet from contact with a H2-containing or H-atom containing gas. The enclosure may further contain a hydrogen getter, such as a magnet-surface modifying gas, or a non-hydrogen containing gas. A non-hydrogen containing gas flow may be provided or a non-hydrogen getter gas flow may be provided through at least part of the protective enclosure.

Abstract: Embodiments of the invention relate to a system for contactless cleaning of an object surface, a lithographic apparatus including the system, and a method of manufacturing a device. The system may include a He plasma source contained in a chamber and a control unit constructed to modify plasma parameters in use, such as the electron energy distribution of the plasma for causing an increase in formation of He metastables without modifying operational parameters of the plasma source. The control unit may include an electrical biasing unit constructed to apply a positive bias voltage to the object, for attracting free electrons from the plasma. The system may include a supplementary gas source, which may be either pre-mixed with He or be supplied from a further gas source. The supplementary gas may be selected based on a pre-knowledge on a type of particles to be expected on the surface of the object.

Abstract: The invention relates to a plasma generator (1) for cleaning an object. The plasma generator (1) comprises a plasma chamber (2) and a support structure (6) arranged in the plasma chamber for supporting the object (7) to be cleaned. Further, the plasma generator comprises an electromagnetic shield (5a, 5b, 5c) counteracting a flow of charged plasma particles flowing from a plasma generating region towards the object, and a plasma source (8). In addition, the plasma generator comprises an additional plasma source (9,10) to form a composition of plasma sources that are arranged to generate in the plasma generating region plasmas, respectively, that mutually interact during operation of the plasma generator so as to force plasma particles to flow in a diffusely closed flow path.

Abstract: A gas analyzing system is disclosed, the system including a gas analyzer and a reduced pressure chamber in which interior the gas analyzer is arranged, the reduced pressure chamber having an inlet configuration for a gas mixture inflow and an outlet configuration for a gas mixture outflow, wherein the outlet configuration during operation is connected to a pump system to facilitate the gas mixture outflow, the outlet configuration having a channel section and a flow section, the flow section having a cross-sectional area that is smaller than the cross-sectional area of the channel section.

Abstract: A gas analyzing system is disclosed, the system including a gas analyzer and a reduced pressure chamber in which interior the gas analyzer is arranged, the reduced pressure chamber having an inlet configuration for a gas mixture inflow and an outlet configuration for a gas mixture outflow, wherein the outlet configuration during operation is connected to a pump system to facilitate the gas mixture outflow, the outlet configuration having a channel section and a flow section, the flow section having a cross-sectional area that is smaller than the cross-sectional area of the channel section.

Abstract: An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.