Abstract: A substrate processing system includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.

Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.

Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.

Abstract: A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.

Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.

Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.

Abstract: A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.

Abstract: The method of inspecting a flow rate controller for controlling a flow rate of a fluid, the flow rate controller including a first pressure detector for detecting a first pressure that is a pressure of the fluid, and a diaphragm valve provided downstream of the first pressure detector and having a diaphragm and a piezoelectric element for driving the diaphragm, the method including: acquiring reference data including the first pressure and a control value of the piezoelectric element with respect to a set flow rate of the fluid; measuring target data including the first pressure and the control value of the piezoelectric element with respect to the set flow rate of the fluid after execution of the acquiring; and determining whether or not there is a problem in the diaphragm valve, by comparing the reference data with the target data.

Abstract: The method for inspecting the flow rate controller for controlling a flow rate of a fluid includes creating and recording a three-dimensional database in which a first pressure, a set flow rate or a second pressure, and a control value of a piezoelectric element are associated with each other, based on reference data, measuring, as target data, control values of the piezoelectric element corresponding to the first pressure detected by a first pressure detector and the set flow rate specified in a recipe of a substrate processing process or the second pressure detected by a second pressure detector, at the time of the execution of the substrate processing process, and determining whether or not there is a problem in a diaphragm valve, by comparing the target data with the reference data included in the three-dimensional database.

Abstract: Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe. In addition, the first valve is opened, and the second valve is closed. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe.

Abstract: A substrate processing system according to an exemplary embodiment includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.

Abstract: The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of gas output from a first flow rate controller, and (ii) acquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller.

Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.

Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

Abstract: A flow rate of a gas supplied into a processing vessel of a substrate processing apparatus is controlled according to a set flow rate of a first flow rate controller. The gas is also supplied into a second flow rate controller. When an output flow rate of the first flow rate controller is in a steady state, a first pressure measurement value of a first pressure gauge and a second pressure measurement value of a second pressure gauge of the second flow rate controller are obtained. A difference absolute value between the first pressure measurement value and a reference pressure value and a difference absolute value between the second pressure measurement value and a reference pressure value are calculated, and then, an average value of the difference absolute values is calculated. The difference absolute values and the average value are respectively compared with a first to third threshold value.

Abstract: Throughput of the processing can be improved. A gas supply system includes a plurality of element devices which constitute the gas supply system and a base 212 on which the plurality of element devices are disposed. Some of the element devices are disposed on a surface 212a of the base 212, and the others are disposed on a surface 212b of the base 212, which is opposite to the surface 212a of the base 212. The plurality of element devices may be implemented by, for example, a flow rate controller FD and a secondary valve FV2. The secondary valve FV2 is disposed on the surface 212b, which is opposite to the surface 212a of the base 212 where the flow rate controller FD is disposed.

Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.

Abstract: Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.

Abstract: A method of obtaining the output flow rate of the flow rate controller according to an aspect is provided. The method including a first step of outputting gas whose flow rate is adjusted according to a designated set flow rate from the flow rate controller, in a state where the diaphragm mechanism is opened; a second step of adjusting the diaphragm mechanism so that the pressure in the second pipe is the target pressure value, in a state where the output of gas from the flow rate controller is continued in the first step; and a third step of obtaining the output flow rate of the flow rate controller by using a pressure value and a temperature value in the tank, after the pressure in the second pipe is set to the target pressure value in the second step.

Abstract: A gas, whose flow rate is adjusted by a flow rate controller as a measurement target, is supplied into a processing vessel in a state that a third valve of the gas supply system provided at an upstream side of the processing vessel is opened. While the gas is continuously supplied, the third valve is closed after a pressure measurement value of a pressure gauge within a flow rate controller for pressure measurement is stabilized. After the third valve is closed, an output flow rate of the flow rate controller as the measurement target is calculated from a previously known volume of the gas supply system in which the gas supplied through the flow rate controller as the measurement target is collected and a rise rate of the pressure measurement value of the pressure gauge within the flow rate controller for pressure measurement with respect to time.