Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where ? carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.

Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.

Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.

Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.

Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.

Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.

Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.

Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.

Abstract: In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.

Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.

Abstract: In one embodiment, a pattern forming method includes: forming a functional layer having a functional group to cross-link a first polymer on a substrate; forming a diblock copolymer layer having the first polymer and a second polymer on the functional layer; self-assembling the diblock copolymer layer to form a self-assembled layer, the self-assembled layer having a first domain corresponding to the first polymer, and a plurality of second domains corresponding to the second polymer and surrounded by or interposed in the first domain; cross-linking the first polymer in the self-assembled layer with the functional group in the functional layer to form a bonding layer disposed in the self-assembled layer and bonded to the functional layer; and washing or etching the self-assembled layer to remain the bonding layer.

Abstract: In one embodiment, a pattern forming method includes: forming a functional layer having a functional group to cross-link a first polymer on a substrate; forming a diblock copolymer layer having the first polymer and a second polymer on the functional layer; self-assembling the diblock copolymer layer to form a self-assembled layer, the self-assembled layer having a first domain corresponding to the first polymer, and a plurality of second domains corresponding to the second polymer and surrounded by or interposed in the first domain; cross-linking the first polymer in the self-assembled layer with the functional group in the functional layer to form a bonding layer disposed in the self-assembled layer and bonded to the functional layer; and washing or etching the self-assembled layer to remain the bonding layer.

Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.