Abstract: In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively.

Abstract: A selfluminous display device having distinct blue (B), green (G) and red (R) light emission sources wherein the spectra of the light emission sources each have a narrow half band width (30 nm or less) at a level regarded as precursor delta functions, which do not mutually substantially overlap. Because light sources having spectra of limited peak values and extremely narrow limited widths are used, shape changes of the spectrum in each light source are suppressed in the wavelength space and can be regarded as purely magnitude changes. Therefore, it becomes possible to correct just by changing the strength for each light emission source, color reproducibility increases and there ceases to be any change over time in the colors.

Abstract: A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

Abstract: A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat.

Abstract: A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the <01-1> direction. Side surfaces of the groove has the maximum inclination not larger than 60.degree.. The thickness of the p-type GaAs current block layer is 1.5 .mu.m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure.

Abstract: A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily.

Abstract: A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer, p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

Abstract: A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

Abstract: A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first cladding layer, then a second cladding layer is formed on the light emitting portions, and the red, green and blue light emitting portions are electrically separated from each other so that three primary color light emitting portions of a self luminous type are formed on the same substrate through single crystal growth process by changing composition of a compound semiconductor layer.

Abstract: A semiconductor layer comprises a first cladding layer of a first conductivity type on a substrate, an active layer laminated on the first cladding layer, a second cladding layer of a second conductivity type laminated on the active layer, and a current confinement layer on the second cladding layer. The first cladding layer, the active layer and the second cladding layer are made of a II-VI group compound semiconductor and the current confinement layer is made of a metal oxide whose thermal conductivity is equal to or larger than 0.01 cal/cm.multidot.s.multidot..degree.C. A silicon layer is provided between the current confinement layer and an electrode. The current confinement layer is provided on an upper portion of a p type semiconductor layer. With the semiconductor laser made of the II-VI group compound semiconductor of a ZnSe system or the like, a heat-radiation characteristic thereof can be improved and long-time operation thereof is made possible.