Patents by Inventor Norikazu Yamada

Norikazu Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10761050
    Abstract: A molecular detection apparatus according to an embodiment includes: a distributor which ionizes a target containing substances to be detected, applies voltage to ionized substances, and extracts the substances to be detected according to a time-of-flight based on the speed; a detector which detects the substance to be detected dropped from the distributor; and a discriminator which discriminates the substance to be detected. The detector includes: a plurality of detection units including field effect transistors using graphene layers; and a plurality of organic probes which are provided on the graphene layers, and at least some of which have different bond strengths with the substances to be detected. The substance to be detected is discriminated depending on a signal pattern based on intensity differences of the detection signals generated by differences in the bond strengths between the organic probes and the substances to be detected.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: September 1, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ko Yamada, Hirohisa Miyamoto, Norikazu Osada, Mitsuhiro Oki, Yasuko Noritomi
  • Patent number: 10677770
    Abstract: A molecular detection apparatus 1 according to an embodiment includes: a collection unit collecting detection target gas containing molecules to be detected; a detector including a detection cell having an organic probe provided at a sensor unit, the organic probe capturing the collected molecule to be detected; and a discriminator discriminating the molecule to be detected by a detection signal generated by the molecule being captured by the organic probe. The detection cell has the organic probe containing a phosphonic acid structure or phosphoric acid structure.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: June 9, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ko Yamada, Hirohisa Miyamoto, Reiko Yoshimura, Norikazu Osada, Hiroko Nakamura, Mitsuhiro Oki
  • Publication number: 20200173524
    Abstract: A continuously variable transmission includes: a first pulley having a first fixed sheave and a first movable sheave; a first cylinder forming a first oil chamber with the first movable sheave; a second pulley having a second fixed sheave and a second movable sheave; a second cylinder forming a second oil chamber with the second movable sheave; and a transmission belt wound around the first pulley and the second pulley. The first cylinder has a first member that is fixed to a first shaft and a second member that is joined to an outer peripheral portion of the first member. A bearing is interposed between an outer periphery of the first member and an inner periphery of a case. A thickness, in an axial direction, of a portion of the first member that is configured to directly abut against the first movable sheave is larger than a thickness of the second member.
    Type: Application
    Filed: August 28, 2018
    Publication date: June 4, 2020
    Applicants: AISIN AW CO., LTD., TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Kazumichi TSUKUDA, Kenta YAMADA, Kosuke KIKUCHI, Jun HAKAMAGI, Norikazu AKAMATSU, Shinya KUWABARA
  • Patent number: 10615005
    Abstract: In a method of an embodiment, radio-frequency power is supplied to an electrode via a matching device from a radio-frequency power supply in order to generate plasma within a chamber. During the supply of the radio-frequency power, it is determined whether or not plasma is generated within the chamber from one or more parameters reflecting plasma generation within the chamber. When it is determined that plasma is not generated, a frequency of the radio-frequency power output from the radio-frequency power supply is adjusted to set the load side reactance of the radio-frequency power supply to zero or to bring the load side reactance close to zero.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: April 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koichi Nagami, Kazunobu Fujiwara, Tadashi Gondai, Norikazu Yamada, Naoyuki Umehara
  • Patent number: 10593519
    Abstract: At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: March 17, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norikazu Yamada, Toshifumi Tachikawa, Koichi Nagami
  • Patent number: 10527581
    Abstract: A molecular detection apparatus according to an embodiment includes a detector and a discriminator. The detector includes a plurality of detection cells, where the plurality of detection cells include at least an organic probe containing a cyano group or a nitro group as a neighboring group of a reactive group. The discriminator discriminates a substance to be detected by signal patterns of the plurality of detection cells.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: January 7, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ko Yamada, Reiko Yoshimura, Hirohisa Miyamoto, Norikazu Osada, Mitsuhiro Oki, Hiroko Nakamura
  • Publication number: 20190318915
    Abstract: In a method of an embodiment, radio-frequency power is supplied to an electrode via a matching device from a radio-frequency power supply in order to generate plasma within a chamber. During the supply of the radio-frequency power, it is determined whether or not plasma is generated within the chamber from one or more parameters reflecting plasma generation within the chamber. When it is determined that plasma is not generated, a frequency of the radio-frequency power output from the radio-frequency power supply is adjusted to set the load side reactance of the radio-frequency power supply to zero or to bring the load side reactance close to zero.
    Type: Application
    Filed: April 12, 2019
    Publication date: October 17, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Koichi NAGAMI, Kazunobu FUJIWARA, Tadashi GONDAI, Norikazu YAMADA, Naoyuki UMEHARA
  • Patent number: 10431656
    Abstract: A semiconductor crystal substrate includes a first buffer layer formed of a nitride semiconductor over a substrate, a second buffer layer formed of a nitride semiconductor on the first buffer layer, a first semiconductor layer formed of a nitride semiconductor on or over the second buffer layer, and a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer. The Fe concentration of the first buffer layer is higher than the C concentration of the first buffer layer. The C concentration of the second buffer layer is higher than the Fe concentration of the second buffer layer.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: October 1, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Tetsuro Ishiguro, Atsushi Yamada, Junji Kotani, Norikazu Nakamura
  • Patent number: 10388544
    Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: August 20, 2019
    Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited
    Inventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
  • Patent number: 10352843
    Abstract: The present invention relates to a cell assessment method characterized in including an acquisition step of acquiring an optical path length image of a small cell clump, an extraction step of extracting a cell nucleus region within the acquired optical path length image, a comparison step of comparing an optical path length of an inside and an optical path length of an outside of the extracted cell nucleus region, and an assessment step of assessing whether or not a cell is a stem cell based on the comparison results.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: July 16, 2019
    Assignees: KYOTO UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Norio Nakatsuji, Norikazu Sugiyama, Yoshinori Mizuguchi, Tadashi Fukami, Hidenao Yamada, Toyohiko Yamauchi, Yumi Kakuno
  • Patent number: 10334694
    Abstract: A light emission control circuit includes a drive circuit that generates a first control signal in order to control a first switching element, and a switching control circuit that generates a second control signal in order to control a second switching element. The switching control circuit maintains the second control signal in an inactivation state in a period in which the first control signal is inactivated in a case where an ON duty ratio of the first control signal is equal to or more than a predetermined value, and maintains the second control signal in an activation state in a part of the period in which the first control signal is inactivated in a case where the ON duty ratio of the first control signal is less than the predetermined value.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: June 25, 2019
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Norikazu Tsukahara, Atsushi Yamada, Kei Ishimaru
  • Patent number: 10250217
    Abstract: Each of a first high frequency power supply and a second high frequency power supply of a plasma processing apparatus is configured to selectively output a continuous wave, a modulated wave and a double-modulated wave. A first average value which determines an impedance at a load side of the first high frequency power supply and a second average value which determines an impedance at a load side of the second high frequency power supply are obtained by using any one of two averaging methods depending on a first high frequency power output from the first high frequency power supply and a second high frequency power output from the second high frequency power supply. An impedance matching of each of a first matching device and a second matching device is performed based on the first average value and the second average value.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: April 2, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koichi Nagami, Norikazu Yamada
  • Patent number: 10109461
    Abstract: A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises: a sampling-average-value calculating process of sampling voltage detection signals and electric current detection signals and calculating an average value of these signals during a first monitoring time; a moving-average-value calculating process of calculating a moving average value of the voltage detection signals and the electric current detection signals; a load impedance-measurement-value calculating process of calculating a measurement value of a load impedance with respect to a first high frequency power supply; and a reactance control process of controlling a reactance of a variable reactance element such that the measurement value of the load impedance is equal or approximate to a preset matching point corresponding to impedance on the side of the first high frequency power supply.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: October 23, 2018
    Assignees: TOKYO ELECTRON LIMITED, DAIHEN CORPORATION
    Inventors: Norikazu Yamada, Toshifumi Tachikawa, Koichi Nagami, Satoru Hamaishi, Koji Itadani
  • Patent number: 10060834
    Abstract: A failure prediction apparatus includes a state feature amount acquisition unit that acquires plural state feature amounts indicating features of an operating state of an apparatus to be monitored, a statistic acquisition unit that acquires statistics of an environmental physical amount indicating an installation environment of the apparatus to be monitored for a specific period, and a calculation unit that acquires a selection condition corresponding to the statistics acquired by the statistic acquisition unit among plural selection conditions, and calculates probability of a failure occurring in the apparatus to be monitored, using the state feature amount satisfying the acquired selection condition, wherein the plural selection conditions are predetermined for each category of the statistics, and are conditions for selecting each of the state feature amounts required to calculate the probability of the failure occurring in the apparatus to be monitored.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: August 28, 2018
    Assignee: FUJI XEROX CO., LTD.
    Inventors: Norikazu Yamada, Takashi Kusakai
  • Patent number: 10032611
    Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: July 24, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Norikazu Yamada, Takeshi Ohse
  • Patent number: 9986120
    Abstract: An environment management apparatus for inside of a machine includes an estimator and a generator. The estimator estimates an environment state in the machine in a case of executing a process under a predetermined control condition, from process execution data for instructing execution of the process. The generator generates, for the environment state estimated by the estimator, a time-series scheme for environment control during the execution of the process from a calculation result obtained by calculating a control condition which maintains the environment state to be less than or equal to a predetermined target value.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: May 29, 2018
    Assignee: FUJI XEROX CO., LTD.
    Inventor: Norikazu Yamada
  • Publication number: 20180115299
    Abstract: Each of a first high frequency power supply and a second high frequency power supply of a plasma processing apparatus is configured to selectively output a continuous wave, a modulated wave and a double-modulated wave. A first average value which determines an impedance at a load side of the first high frequency power supply and a second average value which determines an impedance at a load side of the second high frequency power supply are obtained by using any one of two averaging methods depending on a first high frequency power output from the first high frequency power supply and a second high frequency power output from the second high frequency power supply. An impedance matching of each of a first matching device and a second matching device is performed based on the first average value and the second average value.
    Type: Application
    Filed: October 23, 2017
    Publication date: April 26, 2018
    Inventors: Koichi Nagami, Norikazu Yamada
  • Patent number: 9875881
    Abstract: At a first timing after mounting a semiconductor wafer W on an electrostatic chuck 38, a susceptor 12 is switched from an electrically grounded state into a floated state. From a second timing after the first timing, a second high frequency power HF for plasma generation is applied to the susceptor 12, and a processing gas is excited into plasma in a chamber 10. From a third timing after the second timing, a first high frequency power LF for ion attraction is applied to the susceptor 12, and a self-bias (?Vdc) is generated. From a fourth timing close to the third timing, a negative second DC voltage ?BDC corresponding to the self-bias (?Vdc) is applied to the susceptor 12. From the fifth timing after the fourth timing, a positive first DC voltage ADC is applied to an inner electrode 42 of the electrostatic chuck 38.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: January 23, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kohichi Nagami, Norikazu Yamada, Tadashi Gondai, Kouichi Yoshida
  • Publication number: 20180012736
    Abstract: At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.
    Type: Application
    Filed: July 27, 2017
    Publication date: January 11, 2018
    Inventors: Norikazu Yamada, Toshifumi Tachikawa, Koichi Nagami
  • Publication number: 20170372873
    Abstract: A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises: a sampling-average-value calculating process of sampling voltage detection signals and electric current detection signals and calculating an average value of these signals during a first monitoring time; a moving-average-value calculating process of calculating a moving average value of the voltage detection signals and the electric current detection signals; a load impedance-measurement-value calculating process of calculating a measurement value of a load impedance with respect to a first high frequency power supply; and a reactance control process of controlling a reactance of a variable reactance element such that the measurement value of the load impedance is equal or approximate to a preset matching point corresponding to impedance on the side of the first high frequency power supply.
    Type: Application
    Filed: July 6, 2017
    Publication date: December 28, 2017
    Inventors: Norikazu Yamada, Toshifumi Tachikawa, Koichi Nagami, Satoru Hamaishi, Koji Itadani