Abstract: A developing apparatus in which a toner has a volume-average particle diameter R that is in a range of 4.0 ?m?R?6.2 ?m, a developing roller has an arithmetic mean roughness Ra (?m) that is not more than 0.10 times the volume-average particle diameter R of the toner, a voltage applied to a supply roller is of negative polarity, that is, a normal charging polarity of the toner, triboelectrification polarity of the supply roller with respect to the toner is negative, that is, of the normal charging polarity of the toner, and an abutment width S in which the developing roller and the supply roller abut each other is in a range of 2.5 mm?S?5.5 mm.

Abstract: [Problem] To provide highly anti-corrosive thin platelet-like metal pigments which have high corrosion resistance and good dispersibility even in a strong alkaline atmosphere thereby maintaining the inherent metallic luster of thin platelet-like metal substrates. [Solution] The highly anti-corrosive thin platelet-like metal pigments in which the surface of thin platelet-like metal substrates are treated with phosphoric acid compounds and/or boric acid compounds, and further coated with a layer containing hydrated tin oxide.

Abstract: A diagnosis device for diagnosing loosening of a stator core of a rotary electrical machine. The diagnosis device has: excitation means for vibrating the stator core in the radial direction; vibration detection means for detecting the vibration of the stator core in the radial direction; means for frequency-analyzing an output signal of the vibration detection means that detects vibration generated in the stator core when the stator core is vibrated by the excitation means so as to extract a measurement natural vibration mode of the stator core in a circular ring natural vibration mode; means for estimating a circular ring natural vibration mode of the stator core from shape data of the stator core; and means for determining a clamping state of the stator core by comparing the measurement natural vibration mode and a determination criterion obtained based on the estimated natural vibration mode.

Abstract: Resins (5, 6) are interposed as insulating layers between heat radiation side and heat absorption side heat exchange bodies (2, 3) and heat radiation side and heat absorption side electrodes (41, 42) of a thermoelectric conversion element module (4). The resin (5) is fusion bonded to the heat radiation side heat exchange body (2), and the resin (6) is fusion bonded to the heat radiation side heat exchange body (3). The material of the resins (5, 6) is, for example, a thermosetting plastic. The thermosetting plastic becomes soft when heated and then cures. At the time of fusion bonding of the resins (5, 6) to the heat exchange bodies (2, 3), the heat exchange bodies (2, 3) and the resins (5, 6) are heated and pressed. Then, the resins (5, 6) become soft and enter the cavities and flaws formed in the surfaces of the heat exchange bodies (2, 3). The resins (5, 6) having entered the cavities and flaws cure to fill the cavities in the surfaces of the heat exchange bodies (2, 3).

Abstract: A semiconductor device includes: a package substrate that includes a recessed portion, with electrode pads that are electrically connected to electrodes of the semiconductor chip being formed inside the recessed portion; a semiconductor chip that is housed in the recessed portion; terminal-use wires that are formed on the surface of the package substrate and are electrically connected to the electrode pads; external connection pads that are formed on a back surface of the package substrate and are electrically connected to the electrode pads; a sealing resin portion that includes a grinded surface that is parallel to the surface of the package substrate, and seals at least the semiconductor chip by a sealing resin; rewiring pads that are formed on the grinded surface; and connecting wires that are formed on the grinded surface and electrically interconnect the terminal-use wires and the rewiring pads.

Abstract: Provided is a smear-removing method that can remove smear of a manufactured thin-film magnetic head. The method is performed to a thin-film magnetic head including an MR effect element for reading data having two electrode layers sandwiching an MR effect multilayer as a magneto-sensitive portion therebetween. The method comprises the step of applying a stress voltage less than a breaking voltage of the MR effect element between the two electrode layers to burn off smear. In the method, it is preferable that the stress voltage is applied while an electric resistance or an output voltage of the MR effect element is measured, and the stress voltage is increased until the value of the electric resistance or the output voltage reaches an upper limit specified value specified from a value of an electric resistance or an output voltage in a normal case where smear is not present.

Abstract: A charging apparatus includes a charger for being supplied with an AC voltage and for electrically charging a member to be charged; a current measurer for measuring a current flowing between the charger and the member to be charged when the AC voltage is supplied to the charger; and a particular current extractor for extracting from the current a particular current having a particular frequency.

Abstract: A fluid temperature control device, which includes: a main body block having a passage channel formed in a surface thereof; a thermal conducting plate that is provided on the surface of the main body block, and covers the passage channel to form a passage for passing a fluid to be temperature controlled; and temperature control means that carries out heat exchanging (heating/cooling), by way of the thermal conducting plate, with the fluid passing through the passage, in which the passage abutting on the thermal conducting plate connects a fluid inlet and a fluid outlet formed in the main body block, and is a single passage having an approximately constant passage cross-sectional area over its entire length.

Abstract: A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by feeding a plurality of sense currents with different current values each other through the TMR element, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

Abstract: A semiconductor package includes a base plate; a sidewall provided at a periphery of the base plate; a sensor chip retained in a chip accommodation space defined by the sidewall; and a chip installation hole provided in the base plate for installing the sensor chip. The sensor chip is disposed in the chip installation hole provided in the base plate of the case. Accordingly, it is possible to reduce a thickness of the semiconductor package without changing a thickness of the sensor chip. The base plate has a relatively large thickness except for the chip installation hole. Accordingly, even when the semiconductor package is made thinner, rigidity of the base plate is maintained, thereby minimizing a strain in the base plate.

Abstract: An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to an external magnetic field; and a pinned layer that is a ferromagnetic layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The free layer incorporates: a first soft magnetic layer disposed adjacent to the one of the surfaces of the tunnel barrier layer; a high polarization layer disposed such that the first soft magnetic layer is sandwiched between the tunnel barrier layer and the high polarization layer; and a second soft magnetic layer disposed such that the high polarization layer is sandwiched between the first and second soft magnetic layers.

Abstract: A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

Abstract: For an electrical reluctance rotary machine, a stator has a winding as an armature, and a rotor has permanent magnet implanting slots provided in a rotor core at lateral sides magnetic poles configured to produce reluctance torque along directions of magnetic flux passing through the magnetic poles to produce reluctance torque, and permanent magnets inserted in the permanent magnet implanting slots so as to cancel magnetic flux of the armature intersecting that magnetic flux, to control a magnetic field leaking at ends of the magnetic poles, having circumferential magnetic concavo-convex. The electrical reluctance rotary machine is configured to meet a relationship, such that 1.6 ? P × W pm R ? 1.9 where Wpm [mm] is a width of permanent magnet, R [mm] is an outer-diametrical radius of the rotor, and P is the number of poles.

Abstract: A semiconductor device that mounts a semiconductor chip in a multilayer substrate, including, inner layer conductive patterns formed in the multilayer substrate; extending conductive portions formed to extend on inner layer conductive patterns in the thickness direction, in the chip mounting area into which the semiconductor chip is mounted; and a cutout portion that is formed by cutting the multilayer substrate, and into which the semiconductor chip is contained, in the chip mounting area. And, in the cutout portion, the underside surface of the semiconductor chip and the inner layer conductive patterns are connected via the extending conductive portions at a same potential.

Abstract: An acceleration sensor chip package comprises a frame section, a first semiconductor chip corresponding to an MEMS chip having a plurality of first bumps, a second semiconductor chip having a plurality of second bumps, a substrate on which the first and second semiconductor chips are mounted in parallel with each other and which has a plurality of electrode pads directly connected to the first or second bumps in opposing relationship to the first or second bumps, and external terminals respectively connected to the electrode pads, a closed ring-shaped first sealing section which seals a space defined between the frame section and the substrate so as to surround arrangements of the plurality of first bumps, and a second sealing section which covers the first semiconductor chip, the second semiconductor chip and the first sealing section to seal them.

Abstract: An acceleration sensor chip package comprises a frame section, a first semiconductor chip corresponding to an MEMS chip having a plurality of first bumps, a second semiconductor chip having a plurality of second bumps, a substrate on which the first and second semiconductor chips are mounted in parallel with each other and which has a plurality of electrode pads directly connected to the first or second bumps in opposing relationship to the first or second bumps, and external terminals respectively connected to the electrode pads, a closed ring-shaped first sealing section which seals a space defined between the frame section and the substrate so as to surround arrangements of the plurality of first bumps, and a second sealing section which covers the first semiconductor chip, the second semiconductor chip and the first sealing section to seal them.

Abstract: A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.

Abstract: A data transforming method is provided which can perform a transforming process of transforming collective order data for a plurality of products into individual order data for each individual product and a transforming process in which order data is inherited to a response data transforming process. For each combination of transform source and destination protocols, various designation information is stored beforehand in a mapping definition information area and transaction data is transferred in accordance with the designation information. Designation information includes information of a request for an individual order data division process and a collective response data collection process and information of a correspondence between data items of transaction data.

Abstract: A module circuit board for a semiconductor device by a solder reflow process includes a plurality of pads on which the semiconductor device to be mounted, a plurality of terminals formed on a side edge of the board, a resist film covering an area between said pads and said terminal on the board, and a barrier formed between said pads and said terminals.

Abstract: A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.