Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce3+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: Provided are a base 4 to be inserted into a socket by being rotated around a central axis X of the base, a first body 6 attached to the base 4 so as to be rotatable freely around the central axis X, a second body 8 attached to the first body 6, and a light-emitting module 10 mounted on the second body 8. The second body 8 is attached to the first body 6 so as to be swingable in a direction perpendicular to the central axis X.

Abstract: A bulb-type lamp has a bsae 4 to be inserted into a socket by being rotated about a central axis X of the base, a first body 6 attached to the base 4 to be freely rotatable about the central axis X; a second body 8 attached to the first body 4 to be swingable about a swing axis Y1 that intersects the central axis X; a light-emitting module 10 mounted on the second body 8; and a lighting circuit unit 12 configured to light the light-emitting module 10. The lighting circuit unit 12 is housed in the first body 6.

Abstract: Provided are a base 4 to be inserted into a socket by being rotated around a central axis X of the base, a first body 6 attached to the base 4 so as to be rotatable freely around the central axis X, a second body 8 attached to the first body 6, and a light-emitting module 10 mounted on the second body 8. The second body 8 is attached to the first body 6 so as to be swingable in a direction perpendicular to the central axis X.

Abstract: A light-emitting module (1) includes a substrate (10), a plurality of light-emitting elements (14) formed on the substrate (10), and phosphor layers (15) covering each of the light-emitting elements (14). Each of the phosphor layers (15) includes a first phosphor region (15a) and a second phosphor region (15b) that are divided in the direction substantially parallel to the surface of the substrate (10). Each of the first phosphor region (15a) and the second phosphor region (15b) includes a phosphor that absorbs light emitted from the light-emitting element (14) and emits fluorescence. The maximum peak wavelength of fluorescence emitted from the first phosphor region (15a) is longer than that of fluorescence emitted from the second phosphor region (15b).

Abstract: A phosphor layer forming apparatus (1) in which a paste (21) containing a phosphor is discharged so as to cover each of a plurality of light-emitting elements (11) mounted on a substrate (10) includes the following: a discharge portion (12) for discharging the paste (21) in the form of droplets onto each of the light-emitting elements (11); a measurement portion (13) for measuring the thickness of individual phosphor layers that are formed of the paste (21) covering each of the light-emitting elements (11); and a discharge control portion (14) for controlling the amount of the paste (21) to be redischarged for each phosphor layer in accordance with the thickness of the individual phosphor layers measured by the measurement portion (13). This phosphor layer forming apparatus can reduce the manufacturing time.

Abstract: A semiconductor light emitting apparatus includes a solid-state light emitting device and a wavelength converter that converts primary light emitted by the solid-state light emitting device into secondary light at a loner-wavelength. The wavelength converter is an inorganic compact that includes a transparent wavelength conversion layer containing phosphor having a garnet crystal structure. The phosphor contains a constituent element group composed of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Gd, Tb, and Lu. Part of the constituent element group is substituted by Ce3+ and the amount of Ce+ is 1 atomic % less of the entire constituent element group. As a result, a high-power and highly reliable semiconductor light emitting apparatus suitable as a point light source is provided. In addition, such a semiconductor light emitting apparatus is manufactured through a simple application of traditionally used practical technicians.

Abstract: A light-emitting device (1) includes a substrate (10), a light-emitting element (12) that is mounted on the substrate (10) and includes a luminous region (12b) and a nonluminous region (12a), and a phosphor layer (13) that is formed to cover the light-emitting element (12). The thickness of the phosphor layer (13a) located on the nonluminous region (12a) is smaller than that of the phosphor layer (13b) located on the luminous region (12b). The light-emitting device (1) can suppress nonuniform luminescent color.

Abstract: A light-emitting module (1) includes a substrate (10), a plurality of light-emitting elements (14) formed on the substrate (10), and phosphor layers (15) covering each of the light-emitting elements (14). Each of the phosphor layers (15) includes a first phosphor region (15a) and a second phosphor region (15b) that are divided in the direction substantially parallel to the surface of the substrate (10). Each of the first phosphor region (15a) and the second phosphor region (15b) includes a phosphor that absorbs light emitted from the light-emitting element (14) and emits fluorescence. The maximum peak wavelength of fluorescence emitted from the first phosphor region (15a) is longer than that of fluorescence emitted from the second phosphor region (15b).

Abstract: A semiconductor light-emitting device of the present invention includes at least one conductor A, that is patterned electrode, 2a, a conductor B, that is patterned electrode, 2b, and a solid-state light-emitting element 3 on one side of an insulating heat dissipating substrate 1. The solid-state light-emitting element 3 is mounted on the conductor A 2a but is not mounted on the conductor B 2b. The solid-state light-emitting element 3 is mounted in such a manner that the whole lower surface that is a surface opposing to a main light extraction surface of the solid-state light-emitting element 3 adheres to the conductor A 2a.