Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Abstract: An object is to provide an interleukin production regulator which can be used for prevention, treatment or recurrence prevention of a gastrointestinal disease or an autoimmune disease accompanied by an inflammation as the main symptom, which is highly safe, and which can be administered over a long period. Another object is to provide a method for production of the interleukin production regulator. Further object is to provide a pharmaceutical composition and a food, each of which comprises the interleukin production regulator. Disclosed are: a method for producing an interleukin production regulator having both an effect of maintaining or promoting the production of interleukin-10 and an effect of maintaining or inhibiting the production of interleukin-12, comprising the step of disrupting a cell of a microorganism belonging to the genus Bifidobacterium; an interleukin production regulator produced by the method; and a pharmaceutical and a food, each comprising the interleukin production regulator.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: A hydrocarbon treatment process of the present invention comprises the steps of: adding Rhodococcus erythropolis PR-4 to an aqueous medium containing culture medium ingredients; adding an organic solvent containing a hydrocarbon with 14 or more carbon atoms; and enabling the Rhodococcus erythropolis PR-4 to migrate into the organic solvent and metabolize the hydrocarbon with 14 or more carbon atoms.

Abstract: A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.

Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Abstract: First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an etching device 100. A pressure controller 144 selects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensors 132 and 134. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamber 102 and thus obtains pressure data achieving a predetermined data density. The pressure controller 134 controls a pressure control valve 130 so as to ensure that the pressure data match preset pressure data.