Abstract: Disclosed herein is an electronic device, including: (A) a control electrode; (B) a first electrode and a second electrode; and (C) an active layer composed of an organic semiconductor material layer provided between the first electrode and the second electrode so as to face the control electrode through an insulating layer, wherein a portion of the insulating layer contacting at least the active layer is composed of a layer obtained by curing a material expressed by the general structural formula (1), (2) or (3):

Abstract: A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.

Abstract: A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.

Abstract: There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.

Abstract: A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.

Abstract: A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.

Abstract: There is provided a method of manufacturing an electronic element for forming the electronic element including one or more wiring layers and an organic insulating layer stacked on a substrate. The method includes a wiring layer formation step of forming the wiring layer on the substrate; an organic insulating layer formation step of forming an organic insulating layer on the wiring layer; and an irradiation step of irradiating a short-circuit portion of the wiring layer through the organic insulating layer with a laser beam having a wavelength transmissive through the organic insulating layer.

Abstract: Disclosed herein is an electronic device, including: (A) a control electrode; (B) a first electrode and a second electrode; and (C) an active layer composed of an organic semiconductor material layer provided between the first electrode and the second electrode so as to face the control electrode through an insulating layer, wherein a portion of the insulating layer contacting at least the active layer is composed of a layer obtained by curing a material expressed by the general structural formula (1), (2) or (3):

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: A method for forming a pattern includes the steps of forming a resin pattern through printing on a substrate, forming a water-repellent pattern in such a way that an opening bottom of the resin pattern is covered with a fluorine based material by feeding the fluorine based material from the top of the resin pattern, forming an open window in the water-repellent pattern by removing the resin pattern, and forming a desired pattern composed of a pattern-forming material by feeding the pattern-forming material into the open window of the water-repellent pattern.

Abstract: A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.

Abstract: A display device is provided which includes: pixel circuits for pixel electrode switching, arranged on a substrate; and an interlayer insulating film covering the pixel circuits. In this display device, the interlayer insulating film has connection holes which expose at bottom portions thereof connection portions of the pixel circuits, and connection portions of adjacent pixel circuits of the pixel circuits are exposed at the bottom portions of the connection holes. A method for manufacturing the above display device is also provided.

Abstract: A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.

Abstract: A laminator provided with a means (2) for feeding a planar object to be laminated (7), a rotary lamination film supplier (3) wound up with a lamination film (8) to be adhered on the surfaces of the planar object to be laminated (7) and a mean (4) for heating and pressing the lamination film (8) on the planar object to be laminated (7), wherein: an ID tag (61) is applied on a shaft-end of the rotary lamination film supplier (3), the ID tag (61) is registered a piece of information (S1) which is inherent to the lamination film (8) wound on said lamination film supplier (3), a wireless signal communication means (62) is arranged to face the ID tag (61) for allowing wireless signal communication with the ID tag (61), the wireless signal communication means (62) is connected with a regulation means (63).

Abstract: A method for forming a pattern includes the steps of forming a resin pattern through printing on a substrate, forming a water-repellent pattern in such a way that an opening bottom of the resin pattern is covered with a fluorine based material by feeding the fluorine based material from the top of the resin pattern, forming an open window in the water-repellent pattern by removing the resin pattern, and forming a desired pattern composed of a pattern-forming material by feeding the pattern-forming material into the open window of the water-repellent pattern.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

Abstract: A display device is provided which includes: pixel circuits for pixel electrode switching, arranged on a substrate; and an interlayer insulating film covering the pixel circuits. In this display device, the interlayer insulating film has connection holes which expose at bottom portions thereof connection portions of the pixel circuits, and connection portions of adjacent pixel circuits of the pixel circuits are exposed at the bottom portions of the connection holes. A method for manufacturing the above display device is also provided.

Abstract: A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.