Abstract: After forming an isolation layer and a well region on and in a silicon substrate, a gate oxide layer, a gate electrode of polycrystalline silicon and an oxide layer on the gate electrode are formed. Subsequently, a side wall of a nitride layer is formed. Then, the oxide layer on the gate electrode is removed. Next, selective growth of impurity doped silicon is performed at a temperature lower than or equal to 800.degree. C. to form an elevated source-drain region in a source-drain region. Also, a polycrystalline silicon layer is formed on the gate electrode. Thereafter, by performing heat treatment, the impurity is diffused from the source-drain region to the surface of the silicon substrate to form a source-drain diffusion layer. Simultaneously, conductivity is provided to the entire gate electrode by diffusing impurity from the polycrystalline silicon layer to the gate electrode.

Abstract: With forming an element isolation oxide layer on p-well in a thickness of 3500 .ANG., n-type MOS transistor with a gate electrode and source and drain regions are fabricated. Thereafter, an oxide layer is deposited by an atmospheric pressure chemical vapor deposition. Subsequently, with taking TEOS as material, a TEOS-BPSG layer is deposited by way of a reduced pressure chemical vapor deposition. Then, under inert atmosphere, heat treatment is performed at a temperature higher than or equal to 700.degree. C. to remove organic component in the layer. Thereafter, reflow process is performed at a temperature of approximately 900.degree. C. under nitrogen atmosphere at normal pressure. By this, the organic component in the BPSG layer formed utilizing TEOS can be removed out of the layer to improve element isolation characteristics and reduce leak current.

Abstract: The trap-state density of a switching transistor of a picture element is reduced by selectively treating only the switching transistor of the picture element part of a liquid display with the plasma hydrogenation treatment, the laser annealing treatment or both thereof. That is, aluminum is sputtered before making an aperture for a contact hole of a thin layer transistor, then a mask aluminum is formed on the active circuit element forming region by patterning only aluminum on the picture element forming region. Then, the plasma hydrogenation treatment is made, and the mask aluminum film is removed by the etching. Following the similar process thereafter, an active circuit integrated liquid crystal display is fabricated. Thereby, the leakage current of the switching transistor of the picture element part can be reduced and decrease of pressure tolerance of transistors constituting the active circuit element and the depletion can be prevented.

Abstract: The present invention relates to a coin discriminating apparatus for discriminating the thickness, material, diameter, and the like of a coin at high precision. A transmission coil (11) receives an AC signal generated by an AC signal generating unit (24) and applies an alternating magnetic field to a coin (C) to be discriminated. A reception coil (12) detects an electromotive force induced when the the transmission coil (11) applies the alternating magnetic field on the coin to be discriminated. A detection signal generating unit (27) generates a detection signal having a predetermined phase with respect to the AC signal generated by the AC signal generating unit (24). A phase detecting unit (26) phase-detects the electromotive force detected by the reception coil (12) in accordance with the detection signal generated by the detection signal generating unit.

Abstract: The present invention relates to a coin discriminating apparatus for discriminating the thickness, material, diameter, and the like of a coin at high precision. A transmission coil (11) receives an AC signal generated by an AC signal generating unit (24) and applies an alternating magnetic field to a coin (C) to be discriminated. A reception coil (12) detects an electromotive force induced when the the transmission coil (11) applies the alternating magnetic field on the coin to be discriminated. A detection signal generating unit (27) generates a detection signal having a predetermined phase with respect to the AC signal generated by the AC signal generating unit (24). A phase detecting unit (26) phase-detects the electromotive force detected by the reception coil (12) in accordance with the detection signal generated by the detection signal generating unit.