Abstract: The present invention provides a hollow carbon fibers, hollow carbon particle and production method thereof comprising a step for baking and carbonization of polymer particles having a specified volume after deformation of them. A metal-deposited carbon fiber with metal deposited inside and/or outside the hollow carbon fiber, its production method and electron discharge device. The thickness and crystallinity of the graphite layer can be freely controlled. Since almost no by-product is generated, a step of separation and refining by solvent or the like is not required. The hollow carbon particle of a desired shape can be produced at a high yield rate. According to the present invention, the hollow carbon fiber represented by a carbon nano-tube can be controlled in such a way that a low resistance and uniform shape (fiber diameter and length) are provided with the result that there is an increase in the amount of electrons discharged from the hollow carbon fiber.

Abstract: A plasma treatment apparatus can generate atmospheric pressure plasma with reliability by help of an ignition electrode to facilitate starting the apparatus without using an expensive impedance matching device. The apparatus comprises a plasma-generation chamber having an aperture from which the plasma blows out, a gas supply unit for supplying a gas for plasma generation into the chamber, a pair of electrodes, a power source for applying an AC electric field between the electrodes to maintain the plasma in the chamber, a pulse generator for providing a pulse voltage, and the ignition electrode for applying the pulse voltage to the gas supplied in the chamber to generate the plasma.

Abstract: A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Abstract: A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Abstract: A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Abstract: A plasma treatment apparatus having the capability of uniformly treating an object with plasma at a high treatment speed and a plasma treatment method are provided. This apparatus comprises a tubular vessel having a laterally elongated cross section, a pair of electrodes arranged such that electric flux lines develop substantially in an axial direction of the tubular vessel when one of an AC voltage and a pulse voltage is applied between the electrodes, a gas supply for supplying a streamer generation gas into the tubular vessel, a power source for applying the voltage between the electrodes to generate plural streamers of the gas in the tubular vessel, and a plasma uniform means for making the plural streamers uniform in a lateral direction of the laterally elongated cross section of the tubular vessel to provide the plasma from one end of the tubular vessel.

Abstract: A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Abstract: In a rear projection screen, a plurality of convex lenses of the prescribed configuration are made of photoresist and formed and arranged on a surface or surfaces of a substrate in the prescribed pattern. In case that the convex lenses are formed in the shapes of ellipsoid, the longer radial direction of the ellipsoid is made to coincide with the horizontal direction and shapes of the lenses are changed gradually from the center of the screen to the extremity thereof. Bottom surfaces of non-lens boundary grooves between adjacent convex lenses are made rougher than the convex lens surfaces. A screen manufacturing method comprises the steps of applying photoresist onto a surface or surfaces of a substrate, exposing a patttern of boundary grooves onto the photoresist by photolithography, forming the boundary grooves by etching, and heating and melting the photoresist which is formed with the boundary grooves so as to form a plurality of convex lenses having the prescribed configuration.

Abstract: A ceramic wiring board which comprises ceramic part in which through-holes are made, sintered wiring pattern part provided on the surface of said ceramic part and sintered conductor part filled in said through-holes shows much decrease in cracks at the through-hole part caused by sintering and remarkable reduction in moisture absorbency when the ceramic part comprises ceramic containing a sintering assistant and the sintered conductor part comprises a metal containing the same sintering assistant as that present in said ceramic part.

Abstract: A ceramic multilayer circuit board is provided by sintering a multilayer wiring substrate containing alumina as a main component, which was prepared by the green sheet process, nickel plating and gold plating in this order on the superficial wiring conductor layer, printing a thick film conductor paste on the gold plating layer, firing the printed substrate and finally printing a thick film resistor paste on at least part of the thick film conductor layer and firing to form a thick film resistor layer.

Abstract: A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.

Abstract: A dielectric paste for a thick film capacitor comprises barium titanate powder, glass frit, magnetite powder, an organic vehicle and a surface-active agent. A dielectric constant higher than 1,100 is obtained by firing at a temperature of 900.degree. C. or lower.