Abstract: To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.

Abstract: A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.

Abstract: A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film.

Abstract: An optical integrated circuit 1 according to the present invention includes a planar lightwave circuit 2, and a semiconductor element 3, which are fixed at one contact surface 12. A semiconductor optical amplifier (SOA) 9 is formed on a semiconductor substrate 8. A semiconductor waveguide 10 and a semiconductor waveguide 11 are formed on an input side and an output side of SOA 9, respectively. The semiconductor waveguide 11 has a turnaround portion 11a turned around on the semiconductor substrate 8. Respective ends of the optical waveguides 5 and 6 on a PLC platform 4 and respective ends of semiconductor waveguides 10 and 11 are optically coupled with each other at the contact surface 12.

Abstract: An optical-waveguide device mounted on a fixing member having a pair of opposing upright walls and a sub-mount unit including a metallic sub-mount of a rectangular solid shape inserted between the opposing upright walls and a nonmetallic sub-mount of a rectangular solid shape mounted on the metallic sub-mount, and fixed onto a base table. The fixing member and the sub-mount unit as well as the fixing member and the base table are spot-welded together using YAG welding.

Abstract: A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.

Abstract: A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.

Abstract: A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer and an Al-containing low-reflectivity layer, an active layer structure sandwiched between the DBRs for emitting laser, and a current confinement layer disposed within or in a vicinity of one of the DBRs, the current confinement layer including a central current injection area and an annular current blocking area encircling the central current injection area, the annular current blocking area being formed by selective oxidation of Al in an AlXGa1-XAs layer (0.95?x<1) having a thickness below 60 nm, the Al-containing low-reflectivity layer including Al at an atomic ratio not more than 0.8 and below 0.9.

Abstract: To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.

Abstract: A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.

Abstract: The invention is directed to a photonic crystal defect structure for a vertical cavity surface emitting laser (VCSEL). In accordance with the invention, a set of holes is formed in a pattern with one or more missing holes forming a defect in the pattern of the photonic crystal, according to a proscribed depth, hole diameter, and pattern pitch which will insure operation in a single transverse mode.

Abstract: A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3?0.3 and 0.55?x3<1 and an impurity concentration of 3×1017 cm?3 or above.

Abstract: A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.

Abstract: A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3?0.3 and 0.55?x3<1 and an impurity concentration of 3×1017 cm?3 or above.

Abstract: A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.

Abstract: A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer and an Al-containing low-reflectivity layer, an active layer structure sandwiched between the DBRs for emitting laser, and a current confinement layer disposed within or in a vicinity of one of the DBRs, the current confinement layer including a central current injection area and an annular current blocking area encircling the central current injection area, the annular current blocking area being formed by selective oxidation of Al in an AlXGa1-XAs layer (0.95?x<1) having a thickness below 60 nm, the Al-containing low-reflectivity layer including Al at an atomic ratio not more than 0.8 and below 0.9.

Abstract: A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer and an Al-containing low-reflectivity layer, an active layer structure sandwiched between the DBRs for emitting laser, and a current confinement layer disposed within or in a vicinity of one of the DBRs, the current confinement layer including a central current injection area and an annular current blocking area encircling the central current injection area, the annular current blocking area being formed by selective oxidation of Al in an AlxGa1?xAs layer (0.95?x<1) having a thickness below 60 nm, the Al-containing low-reflectivity layer including Al at an atomic ratio not more than 0.8 and below 0.9.

Abstract: A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.

Abstract: A surface-emitting semiconductor laser device having reduced device resistance, a method for fabricating the device and a surface-emitting semiconductor laser array employing the device are provided. The laser device comprises a lower reflector layer structure and an upper reflector layer structure, formed on a p-type semiconductor substrate. An etching blocking layer, a current confinement layer, and an active layer are formed in that order from below between the lower and upper reflector layer structures. The portion over the etching blocking layer is formed into a mesa shape.

Abstract: The invention is directed to a photonic crystal defect structure for a vertical cavity surface emitting laser (VCSEL). In accordance with the invention, a set of holes is formed in a pattern with one or more missing holes forming a defect in the pattern of the photonic crystal, according to a proscribed depth, hole diameter, and pattern pitch which will insure operation in a single transverse mode.